Contents
- Physical Vapor Deposition (PVD)- Edwards Auto 306
- Sputtering system - Aja Orion 8 UHV
- Plasma Enhanced Chemical Vapour Deposition (PECVD) - Oxford Plasmalab 80+
- Sputtering system - von Ardenne LS 730S
- Electron Beam Physical Vapor Deposition (EB-PVD)
- Atomic Layer Deposition (ALD) - Cambridge NanoTech Savannah
- Resist spin coaters - POLOS Spin 150i SPS europe
Deposition
Physical Vapor Deposition (PVD)- Edwards Auto 306
- 1 x E-beam source with a fourfold revolver crucible holder - up to four different materials via E-beam without breaking vacuum
- 2 x thermal (resistance heating) sources - allow in total combined with the E-beam co-evaporation of three materials
- Temperature controlled heated sample holder
- Film thickness meter with two individual sensors for E-beam and thermal evaporation
- Rotary sample holder for up to 10" wafers
- low temperature evaporation capability for molecular depositions
Contact: Stefan Ostendorp
Location: CeNTech II, 1.04
Sputtering system - Aja Orion 8 UHV
- Vaccuum Load-Lock system: main chamber under constant UHV and ten times faster sample throughput
- RF and DC sputtering
- Ar and N2 process gases
- Quartz crystal monitor for determination of deposition rate
- Substrate heating up to 1000°C
- Targets: currently in use: Nb. Available for future developments: Mo, Si, Ti, SiO2
- 4" diameter wafer substrate holder
- Uniformity +/- 2.5% (over 4" diameter wafer)
Contact: Connor Graham-Scott
Location: CeNTech I, deposition zone
Plasma Enhanced Chemical Vapour Deposition (PECVD) - Oxford Plasmalab 80+
- Process gases: SiH4, N2, N2O, NH3, C4H8
- Deposition of SiN, SiO2, Si..
Contact: Maik Stappers
Location: SoN, plasma zone
Sputtering system - von Ardenne LS 730S
- Magnetron-Sputtersources: Aluminium (Al) and Silver (Ag), Glass (SiO2) and Indium Tin Oxide (ITO)
- DC-Generator: DFG 1500 DC (1.5 kW) for high-rate-sputtering of 50 nm to 1 µm layers
- RF-Generator: A600RF/MU (600 W) for sputtering of non-conductive materials
- Vacuum pressure: ~ 5 x 10-7 mbar
- Processing pressure: 10-3 mbar (with Argon flow)
- Sample size: < 4”-Substrates in sputter-up-mode (Sampleholder for various chip sizes)
Contact: Niklas Vollmar, Mostafa Amirpour
Location: CeNTech I, deposition zone
Electron Beam Physical Vapor Deposition (EB-PVD)
- Beamtec Electron beam evaporator EBM-6II
- Elite 4 controller with beam deflection tracking system
- 4 kW high voltage stage
- 8 x 4 cm3 Crucibles System
- Available materials: Au, Al, Cr, Cu, ITO, SiO2, Ti
Contact: Mostafa Amirpour
Location: CeNTech I, deposition zone
Atomic Layer Deposition (ALD) - Cambridge NanoTech Savannah
- Deposition of (mainly) metal oxides with monolayer accuracy
- Typical deposition materials:
- water (oxygen source)
- Tantalum oxide
- Zinc oxide
- Titanium oxide
- Aluminum oxide
- Tin oxide
- Tungsten oxide
- Iron oxide
- Three heated slots for metal precursors, one unheated for water as oxygen source
- No ozone source or plasma generator included
Contact: Stefan Ostendorp
Location: CeNTech I, room 2.23
Resist spin coaters - POLOS Spin 150i SPS europe
- For E-beam resists and photoresists
- Speed: 0 -12 000 rpm
- Spin processor for cleaning, drying, coating, developing and/or etching of up to Ø 160 mm substrates
- 1 x table top, 1 x wet bench integrated
- Rotation direction (CW, CCW, puddling)
- Full-Plastic System in Natural Polypropylene (NPP)
- Easy, step- by- step recipe programming via large colour touchscreen
Contact: Maik Stappers
Location: CeNTech I, preparation zone