Equipment

General Information

Following are the machines available for use in the Munster Nanofabrication Facility (MNF). To access these machines, a timeslot has to be reserved in advance through our booking system.

Detailed information including operation instructions and recipes are viewable in the MNF-Wiki.

To see maps of the cleanrooms, visit the location page.

To learn how to register for the MNF-Wiki and use the booking system see our general user information.

Deposition

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Physical Vapor Deposition (PVD)- Edwards Auto 306
  • 1 x E-beam source with a fourfold revolver crucible holder - up to four different materials via E-beam without breaking vacuum
  • 2 x thermal (resistance heating) sources - allow in total combined with the E-beam co-evaporation of three materials
  • Temperature controlled heated sample holder
  • Film thickness meter with two individual sensors for E-beam and thermal evaporation
  • Rotary sample holder for up to 10" wafers
  • low temperature evaporation capability for molecular depositions

Contact: Stefan Ostendorp

Location: CeNTech II, 1.04


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Sputtering system - Aja Orion 8 UHV
  • Vaccuum Load-Lock system: main chamber under constant UHV and ten times faster sample throughput
  • RF and DC sputtering
  • Ar and N2 process gases
  • Quartz crystal monitor for determination of deposition rate
  • Substrate heating up to 1000°C
  • Targets: Mo, Si, Nb, Ti, SiO2
  • 4" diameter wafer substrate holder
  • Uniformity +/- 2.5% (over 4" diameter wafer)

Contact: Martin Wolff, Matthias Häussler, Philip Schrinner

Location: CeNTech I, deposition zone


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Plasma Enhanced Chemical Vapour Deposition (PECVD) - Oxford Plasmalab 80+
  • Process gases: SiH4, N2, N2O, NH3, C4H8
  • Deposition of SiN, SiO2, Si..

Contact: Francesco Lenzini, Helge Gehring, Maik Stappers

Location: SoN, plasma zone


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Sputtering system - von Ardenne LS 730S
  • Magnetron-Sputtersources: Aluminium (Al) and Silver (Ag), Glass (SiO2) and Indium Tin Oxide (ITO)
  • DC-Generator: DFG 1500 DC (1.5 kW) for high-rate-sputtering of 50 nm to 1 µm layers
  • RF-Generator: A600RF/MU (600 W) for sputtering of non-conductive materials
  • Vacuum pressure: ~ 5 x 10-7 mbar
  • Processing pressure: 10-3 mbar (with Argon flow)
  • Sample size: < 4”-Substrates in sputter-up-mode (Sampleholder for various chip sizes)

Contact: Philip Schrinner, Fabian Beutel, Niklas Vollmar

Location: CeNTech I, deposition zone

Safety information


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Electron Beam Physical Vapor Deposition (EB-PVD)
  • Beamtec Electron beam evaporator EBM-6II
  • Elite 4 controller with beam deflection tracking system
  • 4 kW high voltage stage
  • 8 x 4 cm3 Crucibles System
  • Available materials: Au, Al, Cr, Cu, ITO, SiO2, Ti

Contact:  Wladick Hartmann, Nicolai Walter

Location: CeNTech I, deposition zone


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Atomic Layer Deposition (ALD) - Cambridge NanoTech Savannah

  • Deposition of (mainly) metal oxides with monolayer accuracy
  • Typical deposition materials: 
    • water (oxygen source)
    • Tantalum oxide
    • Zinc oxide
    • Titanium oxide
    • Aluminum oxide
    • Tin oxide
    • Tungsten oxide
    • Iron oxide
  • Three heated slots for metal precursors, one unheated for water as oxygen source
  • No ozone source or plasma generator included

Contact: Stefan Ostendorp

Location: CeNTech I, room 2.23

Etching



Plasma Etching

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Reactive Ion Etcher (RIE) - Oxford PlasmaPro 80
  • Open load design allows fast wafer loading and unloading
  • Up to 200mm wafers
  • Processes: SiN, NbN, Si, ...

Contact: Francesco Lenzini, Adrian Abazi

Location: SoN, plasma zone


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Inductively Coupled Reactive Ion Etcher (ICP RIE) - Oxford PlasmaPro 100
  • Up to 200mm wafers
  • Process gases: Ar, O2, SF6, CF4, CHF3, HBr, Cl2, BCl3

Contact: Maik Stappers, Johannes Feldmann

Location: SoN, plasma zone


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Plasma Asher - Dionex 2000 Plasma System
  • Power: 0-500 W continuous control
  • Frequency: 13.56 MHz
  • O2 Plasma

Contact: Philip SchrinnerNicolai Walter

Location: CeNTech I, preparation zone

Safety instructions [de]


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Plasma Asher- Diener Zepto-W6

  • Power: 0 – 200 W continuous control
  • Frequency: 13.56 MHz
  • O2 plasma
  • Plasma process for cleaning chip surfaces and stripping the residual of E-beam resist
  • PC control with operating system Microsoft Windows
  • Recipe editable via the touch sensitive screen with the provided pen

Contact: Lin Jin, Anna Ovvyan

Location: CeNTech I, plasma zone



Wet Etching

Acids wet bench
  • General processes with acids (excluding HF)
  • Piece part samples, manual processes

Location: SoN, inorganic chemistry zone


Base wet bench
  • KOH chemistry
  • Silicon anisotropic wet etching
  • Piece part samples, manual processes

Location: SoN, inorganic chemistry zone



Grinding / Polishing

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Chemical-Mechanical Polisher (CMP)- Logitech Tribo-1018
  • 4” wafers and piece parts
  • Available slurries: SF1 (30 nm grain size)
  •            

Location: CeNTech II, 2.03

   


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Lapping and polishing system- Logitech PM6
  • Process capacity of up to 4” wafers
  • Plate speed: 5-100 rpm
  • Lapping accuracy: 1-3 µm
  • Roughness RMS: 2-3 nm
  • In-situ measurement of the plate flatness
  • Available slurries:
    • Al2O3 (9 µm and 3 µm grain size)
    • SF1 (30 nm grain size)

Location: CeNTech II, 2.03

Contact: Corinna Kaspar

Lithography

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Electron beam lithography - Raith EBPG5150
  • High current density Thermal Field Emission gun for operation at 20, 50 and 100 kV
  • ISO 5 environmental chamber
  • 155 mm x 155mm stage
  • Mimimum feature size of less than 8 nm
  • Rapid exposure with 50 or 100 MHz pattern generator
  • Continuously variable large field size operation to 1 mm at all kVs
  • GUI for ease of use operation for diverse "multi user environment"

Contact: Fabian BeutelSimone Ferrari

Location: CeNTech II, E-beam zone

Safety instructions [de]

GDSHelper library


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Dual beam Si/Au Focus Ion Beam (FIB)/ SEM -  Raith VELION

Current status: not yet bookable, instrument is being evaluated and managers are being trained

  • Silicon or Gold focus ion beam (main column)
  • SEM for imaging
  • Ion-assisted electron beam lithography
  • Direct milling
  • Tungsten GIS
  • Continuous writing/ stitch-free lithography
  • TEM lamella preparation with live SEM control

Contact:  Emma Lamonte, Frank Brückerhoff-Plückelmann, Hendrik Voigt

Location: SoN, Lab 100.045


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Beam pen lithography- TERA-print
  • Massively parallel cantilever-free scanning probe lithography for large0area, low-cost and arbitrary surface patterning
  • Rapid generation of micro and nano structures using the PPL head comprised of 20,000 independently addressable pens (NSOM tips)
  • Feature size resolution of sub-200 nm
  • Patterning area: 0.5 x 0.4 cm2

Location: SoN, nanochemistry zone


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Polymer pen lithography- n.able Molecular Printer

  • Base printing module with a choice of different printing technologies (ranging from cantilever arrays and soft polymeric stamps to microcapillary pens)
  • High-Resolution module for increased patterning control down to the low nanoscale
  • Climate module for controlled humidity
  • Optical module for in-situ process control and analysis.

Location: SoN, nanochemistry zone


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Mask aligner - Karl Suss MA56
  • Configured for 5" wafers

  • UV400 Exposure Optics (for 365 nm and 405 nm exposure)

  • Capable of Hard Contact, Soft Contact and Proximity Exposure Modes

Contact:  Johannes Kern, Robert Weingarten

Location: CeNTech I, preparation zone

Safety instructions [de]


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Nano Imprint Lithography System - EVG620 NT
  • Semi-automated system
  • Configured for 2" or 4" wafers
  • UV400 exposure optics (for 350 nm - 450 nm exposure)
  • Capable of hard contact, soft contact and proximity exposure modes
  • UV-Nanoimprint lithography and microprinting to achieve sub 100 nm features

Contact: Friederike Schlüter, Alexander Eich

Location: SoN, photolithography zone


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3D Lithography - Nanoscribe Photonic Professional GT
  • Writing area up to 100 × 100 mm² range
  • Two-photon lithography of common positive-tone photoresists
  • Two photon polymerization (2PP) of various UV-curable photoresists
  • High speed 3D printing by galvo technology
  • High resolution micro 3D printer

Contact: Helge Gehring, Robert Weingarten

Location: CeNTech I, preparation zone

Safety instructions [de]

GDSHelper library


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Resist spin coaters - POLOS Spin 150i SPS europe
  • For E-beam resists and photoresists
  • Speed: 0 -12 000 rpm
  • Spin processor for cleaning, drying, coating, developing and/or etching of up to Ø 160 mm substrates
  • 1 x table top, 1 x wet bench integrated
  • Rotation direction (CW, CCW, puddling)
  • Full-Plastic System in Natural Polypropylene (NPP)
  • Easy, step- by- step recipe programming via large colour touchscreen

Contact: Johannes Feldmann, Anna Ovvyan

Location: CeNTech I, preparation zone

Safety instructions [de]


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General polymer spin coater - Convac TSR48/5 1QS

  • Speed: 0-9990 rpm
  • Processes with up to eight steps can be programmed

Contact: Johannes Feldmann, Anna Ovvyan

Location: CeNTech I, preparation zone

Safety instructions [de]

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Wet processing

HF wet bench
  • HF etching capabilities (BOE 7:1) in a dedicated HF area

Contact: Francesco Lenzini, Thomas Grottke

Location: CeNTech II, 2.03


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E-beam preparation wet bench
  • Two hotplates
  • Spin coater - Polos Spin 150i
  • Ultrasonic bath
  • DI-water

Contact: Johannes Feldmann, Anna Ovvyan

Location: CeNTech I, preparation zone

Safety instructions [de]


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Critical Point Dryer - Leica EM CPD300
  • Fully automated, reproducible and controlled processes ensure high sample quality every run
  • Integrated liquid waste separator ensures safe and easy disposal of exchange fluid avoiding direct contract with user
  • Wide variety of sample holders for all sample sizes

Contact:  Thomas Grottke, Wladick Hartmann

Location: CeNTech I, preparation zone


Photoresist wet bench

  •  Photo resist coating and development
  • Including a spin coater and a hotplate

Location: SoN, photolithography zone


Organic material wet bench

  • General organic chemistry

 Location: SoN, photolithography zone

Metrology

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Transmission Electron Microscope (TEM)- Thermo Fisher Scientific FEI TITAN Themis G3 60-300
  • Operation voltage 60 kV and 300 kV
  • X-FEG field emission gun
  • monochromator
  • Cs image corrector
  • quadrupole EDX-system
  • HAADF detector (Fishione Model 3000)
  • fast CMOS camera (CETA 4k x 4k)
  • high resolution EEL spectrometer (GATAN Quantum 965)

Contact: Harald Rösner

Location: CeNTech II, E.05


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Dual Beam microscope (SEM / FIB)- Zeiss CrossBeam 340
  • SEM/FIB dual beam
  • Zeiss Gemini I electron beam column
  • Zeiss Capella Ga ion beam column
  • Pt gas-injection system (GIS)
  • Detectors: In-lens SE, BSD4
  • Variable pressure option for biological samples
  • Built-in O2- plasma

Contact: Banafsheh Abasahl, Shabnam Taheriniya, Radic Drazen

Location: SoN, FIB zone


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Optical microscope - Nikon Eclipse LV100ND
  • Bright & Darkfield
  • Magnification: 2.5 - 100 x
  • Differential interference contrast (DIC) prism
  • Max. sample size: 150 x 150 mm

Contact: Lin Jin

Location: CeNTech I, preparation zone


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Scanning Electron Microscope (SEM) -  JEOL JSM-IT100
  • Resolution: 4 nm
  • Acceleration voltage: 20 kV
  • Probe current: 1 pA – 0.3 µA
  • Electron source: tungsten hairpin
  • High and low vacuum operation: 10-100 Pa
  • Detector: secondary-electron and backscattered electron detector
  • Max. specimen size: 150 mm diameter
  • Specimen movement range: 80 mm x 40 mm
  • Focussing range: WD 5-48 mm

Contact: Wladick HartmannCorinna Kaspar

Location: CeNTech, SEM zone


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Dual Beam microscope (SEM / FIB) - Zeiss XB1540 Crossbeam
  • Scanning electron microscope, 1 nm max resolution
  •  Acceleration voltage 1-30kV
  •  SE2, secondary electron detector
  •  BSE, backscattered electron detector
  •  Focused Ion Beam milling using Ga ions; 5 nm precision
  •  Live SEM imaging during FIB milling
  •  Raith nanolithography system for electron/ion lithography
  •  Kleindiek MM3a micromanipulators
  •  Gas injection system can be made available upon request

Contact: Johannes Kern, Torsten Stiehm, Martin Wolff

Location: CeNTech, SEM / FIB zone


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Helium/Neon Focused Ion Beam (FIB) – Zeiss ORION NanoFab
  • Scanning helium ion microscope,
    • 0.5 nm imaging resolution
  • SE, secondary electron detector
  • Focused Ion Beam milling using He and Ne ions;
    • Nanostructures with sub-10nm dimensions
  • Coming soon: Raith Elphy pattern generator

Contact: Alexander Eich, Emma Lamonte

Location: SoN, FIB zone


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Scanning Near-Field Optical Microscopey (SNOM) - neaSNOM
  • Scattering-type Scanning-Near-Field-Optical-Microscope
  • Ultrahigh resolution imaging with resolution < 10 nm
  • Nano-FTIR: Ultrahigh resolution spectroscopy with resolution < 10 nm
  • VIS-, NIR-, MIR-spectral region
  • Atomic force microscope with resolution < 10 nm

Contact: Matthias Häussler, Lin Jin

Location: SoN, SNOM zone


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Film thickness measurement - Filmetrics F20
  • 15 nm - 70 µm
  • Wavlength range 380-1050 nm
  • up to 1 µm spot thickness measurements microscope available

Contact: Lin Jin

Location: CeNTech I, preparation zone

Safety instructions [de]


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Time-of-Flight- Secondary Ion Mass Spectroscopy (Tof-SIMS) - Cryo-IONTOF M6 Special Edition
  • Time-of-flight analyzer for mass resolution up to 30000, mass accuracy of a few ppm
  • Bismuth liquid metal ion gun (30 keV) for high resolution (< 70 nm) imaging
  • Argon gas cluster ion gun (5 to 20 keV) for analysis and molecular depth profiling
  • Dual beam ion gun (0.25 to 2 keV, Ar+, O2-, Cs+) for depth profiling
  • Cryogenic sample handling for analysis of hydrated samples
  • Programmable sample heating and cooling (-180 to 600 ˚C)
  • High speed sample rotation stage for high resolution depth profiling

Contact: Bonnie Tyler

Location: SoN, Lab 110.037


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Ellipsometer -  Woolam M-2000
  • Excels in both general purpose thin film characterization (i.e., film thickness, optical constants) and large-area uniformity mapping
  • Covers the wavelength range from 370 nm – 1690 nm
  • Measures angle range 55° – 85° with automated tilt stages
  • Fine measurement capable with focus probe, with a spot size of 100 um
  • Automated alignment

Contact: Lin Jin, Anna Ovvyan

Location: CeNTech, ellipsometer zone


Film thickness measurement system- Toho Spec 3100

Contact: Jonas Schütte

Location: SoN, Nanochemistry zone


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Atomic Force Microscopy (AFM)- NanoScope Icon, Bruker
  • XY scan range: 90μm x 90μm typical, 85μm minimum
  •  Z range: 10μm typical in imaging and force curve modes, 9.5μm minimum
  • Pixel density image up to 5120x5120
  •  Z sensor noise level in closed loop:
    • 35pm RMS typical imaging bandwidth (up to 625Hz);
    •  50pm RMS, force curve bandwidth (0.1Hz to 5kHz)
  • Z range 10μm typical in imaging and force curve modes, 9.5μm minimum
  • Temperature-control and thermal analysis from - 35°C to 250°C
  • AFM modes: Standard: ScanAsyst, PeakForce Tapping, TappingMode (air), Contact Mode, Lateral Force Microscopy, PhaseImaging, Lift Mode, MFM, Force Spectroscopy, Force Volume, EFM, Surface Potential, Piezoresponse Microscopy, Force Spectroscopy; Optional: PeakForce QNM, HarmoniX, Nanoindentation, Nanomanipulation, Nanolithograpy, Force Modulation (air/fluid), TappingMode (fluid), Torsional Resonance Mode, Dark Lift, STM, SCM, C-AFM, SSRM, PeakForce TUNA,TUNA, TR-TUNA, VITA

Contact: Francesco Lenzini, Emma Lamonte

Location: SoN, Bio-AFM zone


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Atomic Force Microscopy (AFM)- Bioscope Resolve, Bruker
  • Inverted light microscope
  • X-Y Scan Range ≥100 μm, open-loop or closed-loop operation
  • Z Scan Range ≥15 μm, open-loop or closed-loop operation
  • Deflection Detection IR superluminescent diode (SLD) λ=850 nm
  • Baseline Tilt <0.25 nm/μm
  • XY Sensor Noise <150 pm
  • Height Noise 35 pm (typical with appropriate vibration and acoustic isolation)
  • XY Sample Stage Motorized stage with 10 mm x 10 mm range


Contact: Kristina Riehemann

Location: SoN, Bio AFM zone


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Atomic Force Microscopy (AFM)- Nanowizard 3, JPK-Bruker
  • Soft and hard materials, biological samples (in liquid)
  • Zeiss inverted light microscope
  • Resolution: 1-2 nm
  • Comprehensive force measurement from single molecules (suppliers claim) to living cells
  • Z sensor noise level better than 35 pm RMS
  • Motorized stage with 20mm2 x 20mm2 travel range


Contact: Friederike Schlüter

Location: SoN, SNOM zone

Packaging

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Stereolithography 3D Printer - Ember
  • Z-resolution: 10-100 µm
  • XY-resolution: 50 µm
  • Build volume: 64 x 40 x 134 mm
  • Speed: 18 mm/h at 25µm layer thickness

Contact: Helge Gehring

Location: CeNTech II, 2.03


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Semi-automatic dicing system - K&S 7100 ad
  • Accuracy in x/y: 1 µm
  • Accuracy in z: 200 nm
  • Substrate thickness < 12 mm
  • Materials: Si, GaAs, SOS (Silicon on Sapphire), ...

Contact: Adrian Abazi, Nicolai Walter, Helge Gehring

Location: CeNTech II, 2.03


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Wire bonder - tpt HB10
  • Wedge and ball bonding
  • Motorized z-axis
  • Bond arm length 165 mm
  • Al and Au wires of 25µm diameter
  • Laser assisted XY positioning system
  • Substrate heating
  • Digital live imaging
  • Pull tester

Contact: Matthias Häussler, Robin Stegmüller, Fabian Beutel

Location: CeNTech II, electronic lab, room 2.16b