New spin filter on the atomic scale
In information technology, so-called spin currents are used to switch the magnetisation in memory cells. This technology is essential, as it allows magnetic information, e.g. in smartwatches, to be written particularly fast and at extremely high density. The capability to switch between two magnetic states, which function as bits, requires precise control of the spin currents at the smallest scale. Dr Maciej Bazarnik and Professor Anika Schlenhoff from the Institute of Physics at the University of Münster have now demonstrated that it is possible to precisely adjust spin currents at the atomic scale. The study was recently published in the journal ACS Nano.
The team also showed that nanomagnets can be switched back and forth on demand by adjusting the voltage or the position at which the spin currents are injected. ‘Our results are relevant for the further miniaturisation of current data storage technologies,’ says Anika Schlenhoff. ‘Our experimental approach is also important for the study of novel magnetic materials as potential candidates for new storage media,’ adds Maciej Bazarnik.
Spin is a quantum mechanical property of electrons. When tunnelling, electrons pass through an insulating barrier from one magnetic layer to another. Resonant tunnelling is a special form. In this case, a conductive layer lies within the insulating layer, which acts as a kind of filter and only allows electrons with a certain energy and a certain spin to tunnel. Maciej Bazarnik and Anika Schlenhoff replaced the layers between the two magnets with a vacuum, resulting in a particularly uniform filtering effect. By also replacing the outer magnets with a nanomagnet and an atomically sharp magnetic microscope tip, they achieved atomic-scale precision in measurement and control.
The project was funded by the German Research Foundation (DFG).
Original publication
M. Bazarnik, A. Schlenhoff (2026): Spin Filtering on Demand via Localized States in an Atomic-Scale Resonant Tunneling Magnetic Tunnel Junction. ACS Nano; DOI: 10.1021/acsnano.5c21248