Allgemeines Physikalisches Kolloquium - WS 2013/14

Ort:	48149 Münster, Wilhelm-Klemm-Straße 10, IG 1, HS 2
Zeit:	Donnerstag, 14.11.2013, 16 Uhr c.t.
	Kolloquiums-Kaffe: ab 15:45 Uhr vor dem Hörsaal

Silicides formation for advanced mos structures

Dr. Dominique Mangelinck, IM2NP, CNRS, Université Aix-Marseille (FR)

Metallic silicides are used as contact materials on source/drain and gate in MOS structure since 40 years. From the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget and low Si consumption. Ni(Pt)Si with 10 at % Pt is currently employed in recent technologies since Pt allows to stabilise NiSi at high temperature [1]. The presence of Pt and the very low thickness (< 10 nm) needed for the contact in the devices bring new concerns for actual devices. Indeed for such film thicknesses, phenomena like nucleation, lateral growth, interfacial reaction, stress, texture, and transient phase formation [2] can play an important role. The presence of alloy elements (Pt, Pd…) as well as stress and defects induced by the confinement in devices may have an effect on the silicide formation mechanism and alloying element redistribution. In this work, in situ techniques (XRD, sheet resistance, DSC) were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd …) during the silicide formation. In particular APT has been used for the local analysis of MOSFET in 3D and at the atomic scale [3]. The advances in the understanding of the mechanisms of formation and redistribution will be discussed.

[1] Mangelinck et al, APL, 75, 1736 (1999)
[2] Mangelinck et al, APL, 95, 181902 (2009)
[3] Panciera et al, APL, 100, 201909 (2012)

Einladender: Prof. Dr. H. Bracht

Im Auftrag der Hochschullehrer des Fachbereichs Physik

Prof. Dr. N.A. Stolwijk