Insights into the energy landscape of a ‘memristive’ material

For modern data storage and new computing concepts, so-called memristive materials are of great interest because they can store information without a continuous supply of energy and because even small changes in their atomic structure lead to pronounced changes in electrical resistance. This makes it possible to create very dense networks of memory cells in which computational operations can take place directly within memory. In this way, the time- and energy-intensive transfer of data between processor and data storage can be avoided. However, this high sensitivity, which makes these materials attractive for applications, also has a downside. In a nanoscopic volume of germanium telluride, a particularly versatile material for memristive and ferroelectric applications, even slight atomic rearrangements lead to significant intrinsic noise, i.e. spontaneous changes in resistance. Using this noise, doctoral student Sebastian Walfort and Prof Martin Salinga’s team at the Institute of Materials Physics were able to derive thermodynamic quantities and map the energy landscape that governs the material’s behaviour.
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