Dr. Robert Schneider

PostDoc

Wilhelm Klemm-Str. 10
48149 Münster

E-Mail: schneidr@uni-muenster.de
Telefon: +49 251 83-24392
Labor:  +49 251 83-33674

---

Publications

• Spin valves as magnetically switchable spintronic THz emitters, M. Fix, R. Schneider, S. Michaelis de Vasconcellos, R. Bratschitsch, and M. Albrecht, Appl. Phys. Lett. 117, 132407 (2020)

• Thermomagnetic control of spintronic THz emission enabled by ferrimagnets, M. Fix, R. Schneider, J. Bensmann, S. Michaelis de Vasconcellos, R. Bratschitsch, and M. Albrecht, Appl. Phys. Lett. 116, 012402 (2020)

• Spintronic GdFe/Pt THz emitters, R. Schneider, M. Fix, J. Bensmann, S. Michaelis de Vasconcellos, M. Albrecht, and R. Bratschitsch, Appl. Phys. Lett. 115, 152401 (2019)

• Supercontinuum second harmonic generation spectroscopy of atomically thin semiconductors, T.Stiehm, R. Schneider, J. Kern, I. Niehues, S. Michaelis de Vasconcellos, and R. Bratschitsch, Rev. Sci. Instrum. 90, 083102 (2019)

• Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride, D. Wigger, R. Schmidt O. Del Pozo-Zamudio, J. Preuß, P. Tonndorf, R. Schneider, P. Steeger, J. Kern, Y. Khodaei, J. Sperling, S. Michaelis de Vasconcellos, R. Bratschitsch, and T. Kuhn, 2D Materials 6, 035006 (2019)

• Zeeman spectroscopy of excitons and hybridization of electronic states in few-layer WSe₂, MoSe₂ and MoTe₂, A. Arora, M. Koperski, A. Slobodeniuk, K. Nogajewski, R. Schmidt, R. Schneider, M. Molas, S. Michaelis de Vasconcellos, R. Bratschitsch, and M. Potemski, 2D Materials 6, 01050 (2018)

• Magnetic-field-dependent THz emission of spintronic TbFe/Pt layers, R. Schneider, M. Fix, R. Heming, S. Michaelis de Vasconcellos, M. Albrecht, and R. Bratschitsch, ACS Photonics 5 (10), 3936-3842 (2018)

• Valley-contrasting optics of interlayer excitons in Mo- and W-based bulk transition metal dichalcogenides, A. Arora, T. Deilmann, P. Marauhn, M. Drüppel, R. Schneider, M. R. Molas, D. Vaclavkova, S. Michaelis de Vasconcellos, M. Rohlfing, M. Potemski, and R. Bratschitsch, Nanoscale 10, 15571-15577 (2018)

• Exciton-phonon coupling in mono- and bilayer MoTe₂, S. Helmrich, R. Schneider, A. W. Achtstein, A. Arora, B. Herzog, S. Michaelis de Vasconcellos, M. Kolarczik, O. Schoeps, R. Bratschitsch, U. Woggon, and N. Owschimikow,  2D Materials 5, 045007 (2018)

• Incorporation of oxygen atoms as a mechanism for photoluminescence enhancement of chemically treated MoS2, C. Schwermann, T. Stiehm, P. Tonndorf, R. Schneider, R. Schmidt, J. Kern, S. Michaelis de Vasconcellos, R. Bratschitsch, and N. L. Doltsinis, Phys. Chem. Chem. Phys. 20, 16918-16923 (2018)
• Inverted valley polarization in optically excited transition metal dichalcogenides, G. Berghäuser, I. Bernal-Villamil, R. Schmidt, R. Schneider, I. Niehues, P. Erhart, S. Michaelis de Vasconcellos, R. Bratschitsch, A. Knorr, and E. Malic, Nature Communications 9, 971 (2018)
• Exciton broadening and band renormalization due to Dexter-like intervalley coupling, I. Bernal-Villamil, G. Berghäuser, M. Selig, I. Niehues, R. Schmidt, R. Schneider, P. Tonndorf, P. Erhart, S. Michaelis de Vasconcellos, R. Bratschitsch, A. Knorr, and E. Malic, 2D Materials 5, 025011 (2018)
• Strain control of exciton-phonon coupling in atomically thin semiconductors, I. Niehues, R. Schmidt, M. Drüppel, P. Marauhn, D. Christiansen, M. Selig, G. Berghäuser, D. Wigger, R. Schneider, L. Braasch, R. Koch, A. Castellanos-Gomez, T. Kuhn, A. Knorr, E. Malic, M. Rohlfing, S. Michaelis de Vasconcellos, and R. Bratschitsch, Nano Lett. 18, 1751-1757 (2018)
• Phonon sidebands in monolayer transition metal dichalcogenides, D. Christiansen, M. Selig, G. Berghäuser, R. Schmidt, I. Niehues, R. Schneider, A. Arora, S. Michaelis de Vasconcellos, R.  Bratschitsch, E. Malic, and A. Knorr, Phys. Rev. Lett.119, 187402 (2017)
• Interlayer excitons in a bulk van der Waals semiconductor, A. Arora, M. Drüppel, R. Schmidt, T. Deilmann, R. Schneider, M. R. Molas, P. Marauhn, S. Michaelis de Vasconcellos, M. Potemski, M. Rohlfing, and R. Bratschitsch, Nature Communications 8, 639 (2017)
• Highly anisotropic in-plane excitons in atomically thin and bulk-like 1T'-ReSe₂, A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, Nano Lett. 17, 3202 (2017)
• Nanoscale positioning of single-photon emitters in atomically thin WSe₂, J. Kern, I. Niehues, P. Tonndorf, R. Schmidt, D. Wigger, R. Schneider, T. Stiehm, S. Michaelis de Vasconcellos, D. E. Reiter, T. Kuhn, and R. Bratschitsch, Advanced Materials 28, 7101 (2016)
• Reversible uniaxial strain tuning in atomically thin WSe₂, R. Schmidt, I. Niehues, R. Schneider, M. Drüppel, T. Deilmann, M. Rohlfing, S. Michaelis de Vasconcellos, A. Castellanos-Gomez, and R. Bratschitsch,  2D Materials 3, 021011 (2016)
• Valley Zeeman splitting and valley polarization of neutral and charged excitons in monolayer MoTe₂  at high magnetic fields, A. Arora, R. Schmidt, R. Schneider, M. Molas, I. Breslavetz, M. Potemski, and R. Bratschitsch, Nano Lett. 16,3624 (2016)
• Ultrafast Coulomb-induced intervalley coupling in atomically thin WS₂, R. Schmidt, G. Berghäuser, R. Schneider, M. Selig, P. Tonndorf, E. Malic, A. Knorr, S. Michaelis de Vascocellos, and R. Bratschitsch,  Nano Lett. 16, 2945 (2016)
• Nanoantenna-enhanced light−matter interaction in atomically thin WS₂, J. Kern, A. Trügler, I. Niehues, J. Ewering, R. Schmidt, R. Schneider, S. Najmaei, A. George, J. Zhang, J. Lou, U. Hohenester, S. Michaelis de Vasconcellos, and R. Bratschitsch, ACS Photonics 2, 1260 (2015)
• Single-photon emission from localized excitons in an atomically thin semiconductor, P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, Optica 2, 347 (2015)