Publikationen

2023

P. Steeger, J.-H. Graalmann, R. Schmidt, I. Kupenko, C. Sanchez-Valle, P. Marauhn, T. Deilmann, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch
Pressure Dependence of Intra- and Interlayer Exciton in 2H-MoS₂ Bilayers
Nano Lett. 2023, 23, 8947-8952

P. Marauhn and M. Rohlfing
Image charge effect in layered materials: Implications for the interlayer coupling in MoS₂
Phys. Rev. B 107, 155407

2020

I. Niehues, P. Marauhn, T. Deilmann, D. Wigger, R. Schmidt, A. Arora, S. Michaelis de Vasconcellos, Michael Rohlfing and R. Bratschitsch
Strain tuning of the Stokes shift in atomically thin semiconductors
Nanoscale 12, 20786 (2020)

R. Wallauer, P. Marauhn, J. Reimann, S. Zoerb, F. Kraus, J. Güdde, M. Rohlfing, and U. Höfer
Momentum-resolved observation of ultrafast interlayer charge transfer between the topmost layers of MoS₂
Phys. Rev. B 102, 125417 (2020)

2019

M.-C. Heissenbüttel, P. Marauhn, T. Deilmann, P. Krüger, and M. Rohlfing
Nature of the excited states of layered systems and molecular excimers: Exciplex states and their dependence on structure
Phys. Rev. B 99, 035425 (2019)

2018

M. Drüppel, T. Deilmann, J. Noky, P. Marauhn, P. Krüger, and M. Rohlfing
Electronic excitations in transition metal dichalcogenide monolayers from an LDA+GdW approach
Phys. Rev. B 98, 155433 (2018)

A. Arora, T. Deilmann, P. Marauhn, M. Drüppel, R. Schneider, M. R. Molas, D. Vaclavkova, S. Michaelis de Vasconcellos, M. Rohlfing, M. Potemski, and R. Bratschitsch
Valley-contrasting optics of interlayer excitons in Mo- and W-based bulk transition metal dichalcogenides
Nanoscale 10, 15571 (2018)

Y. Niu, S. Gonzalez-Abad, R. Frisenda, P. Marauhn, M. Drüppel, P. Gant, R. Schmidt, N. S. Taghavi, D. Barcons, A. J. Molina-Mendoza, S. Michaelis de Vasconcellos, R. Bratschitsch, D. Perez De Lara, M. Rohlfing, and A. Castellanos-Gomez
Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS₂, MoSe₂, WS₂ and WSe₂
Nanomaterials 8, 725 (2018)

I. Niehues, R. Schmidt, M. Drüppel, P. Marauhn, D. Christiansen, M. Selig, G. Berghäuser, D. Wigger, R. Schneider, L. Braasch, R. Koch, A. Castellanos-Gomez, T. Kuhn, A. Knorr, E. Malic, M. Rohlfing, S. Michaelis de Vasconcellos, and R. Bratschitsch
Strain Control of Exciton-Phonon Coupling in Atomically Thin Semiconductors
Nano Lett., 2018, 18 (3), pp. 1751-1757

2017

A. Arora, M. Drüppel, R. Schmidt, T. Deilmann, M.R. Molas, P. Marauhn, S. Michaelis de Vasconcellos, M. Potemski, M. Rohlfing, and R. Bratschitsch
Interlayer excitons in a bulk van der Waals semiconductor
Nature Communications 8, Article number: 639 (2017)