• Publikationen


    • I. Niehues, P. Marauhn, T. Deilmann, D. Wigger, R. Schmidt, A. Arora, S. Michaelis de Vasconcellos, Michael Rohlfing and R. Bratschitsch
      Strain tuning of the Stokes shift in atomically thin semiconductors
      Nanoscale 12, 20786 (2020)
    • R. Wallauer, P. Marauhn, J. Reimann, S. Zoerb, F. Kraus, J. Güdde, M. Rohlfing, and U. Höfer
      Momentum-resolved observation of ultrafast interlayer charge transfer between the topmost layers of MoS2
      Phys. Rev. B 102, 125417 (2020)


    • M.-C. Heissenbüttel, P. Marauhn, T. Deilmann, P. Krüger, and M. Rohlfing
      Nature of the excited states of layered systems and molecular excimers: Exciplex states and their dependence on structure
      Phys. Rev. B 99, 035425 (2019)


    • M. Drüppel, T. Deilmann, J. Noky, P. Marauhn, P. Krüger, and M. Rohlfing
      Electronic excitations in transition metal dichalcogenide monolayers from an LDA+GdW approach
      Phys. Rev. B 98, 155433 (2018)
    • A. Arora, T. Deilmann, P. Marauhn, M. Drüppel, R. Schneider, M. R. Molas, D. Vaclavkova, S. Michaelis de Vasconcellos, M. Rohlfing, M. Potemski, and R. Bratschitsch
      Valley-contrasting optics of interlayer excitons in Mo- and W-based bulk transition metal dichalcogenides
      Nanoscale 10, 15571 (2018)
    • Y. Niu, S. Gonzalez-Abad, R. Frisenda, P. Marauhn, M. Drüppel, P. Gant, R. Schmidt, N. S. Taghavi, D. Barcons, A. J. Molina-Mendoza, S. Michaelis de Vasconcellos, R. Bratschitsch, D. Perez De Lara, M. Rohlfing, and A. Castellanos-Gomez
      Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
      Nanomaterials 8, 725 (2018)
    • I. Niehues, R. Schmidt, M. Drüppel, P. Marauhn, D. Christiansen, M. Selig, G. Berghäuser, D. Wigger, R. Schneider, L. Braasch, R. Koch, A. Castellanos-Gomez, T. Kuhn, A. Knorr, E. Malic, M. Rohlfing, S. Michaelis de Vasconcellos, and R. Bratschitsch
      Strain Control of Exciton-Phonon Coupling in Atomically Thin Semiconductors
      Nano Lett., 2018, 18 (3), pp. 1751-1757


    • A. Arora, M. Drüppel, R. Schmidt, T. Deilmann, M.R. Molas, P. Marauhn, S. Michaelis de Vasconcellos, M. Potemski, M. Rohlfing, and R. Bratschitsch
      Interlayer excitons in a bulk van der Waals semiconductor
      Nature Communications 8, Article number: 639 (2017)

  • Abschlussarbeiten

    • Thickness dependent electronic structure and optical properties of TMDCs
      [Masterarbeit, 2017]
    • Einfluss der Schichtanordnung auf die elektronische Struktur eines MoS2-Bilayers: Eine Tight-Binding Studie
      [Bachelorarbeit, 2015]