KRÜGER, apl. Prof. Dr. Peter

Institut für Festkörpertheorie


E-Mail

apl. Prof. Dr.

Bereich/Gruppe: AG Rohlfing

Publikationen

  • 2023 - 2011

    P.J. Grenz, P. Krüger and M. Donath
    Interplay of spin-orbit and exchange interaction in a ferromagnet/heavy-metal hybrid system: Ni on W(110)
    New. J. Phys. 25 (2023), 103037

    P. Härtl, S. Schemmelmann, P. Krüger, M. Donath, and M. Bode
    Structural and electronic properties of TI films on Ag(111): From (√3) × √3) surface alloy to moiré superstructure
    Phys. Rev. B 107, 205144 (2023)

    M. Holtmann, P. Krüger, K. Miyamoto, T. Okuda, K. Shimada, and M. Donath
    Surface electronic structure of Re(0001): A spin-resolved photoemission study
    Phys. Rev. B 107, 165420 (2023)


    A. Kirchhoff, T. Deilmann, P. Krüger, and M. Rohlfing
    Electronic and optical properties of a hexagonal boron nitride monolayer in its pristine form and with point defects from first principles
    Phys. Rev. B 106, 045118 (2022)

    M. Holtmann, P. Krüger, K. Miyamoto, T. Okuda, P.J. Grenz, S. Kumar, K. Shimada, and M. Donath
    Distinct Tamm and Shockley surface states on Re(0001) mixed by spin-orbit interaction
    Phys. Rev. B 105, L241412 (2022)

    F. Schöttke, S. Schemmelmann, P. Krüger and Markus Donath
    Rashba-split image-potential state and unoccupied surface electronic structure of Re(0001)
    Phys. Rev. B 105, 155419 (2022)


    S. Schemmelmann, P. Krüger, F. Schöttke, and M. Donath
    Rashba-split surface state and spin-dependent photon emission from Re(0001) at Γ
    Phys. Rev. B 104, 205425 (2021)

    M.-C. Heißenbüttel, T. Deilmann, P. Krüger, and M. Rohlfing
    Valley-Dependent Interlayer Excitons in Magnetic WSe2/CrI3
    Nano Lett. 2021 (June 2, 2021)


    T. Deilmann, P. Krüger, and M. Rohlfing
    Ab initio studies of exciton g factors: Monolayer transition metal dichalcogenides in magnetic fields
    Phys. Rev. Lett. 124, 226402 (2020)

    P. Eickholt, P. Krüger, S.D. Stolwijk, A.B. Schmidt, and M. Donath
    Breaking time-reversal symmetry at the M point: Spin signal from a surface state on Tl/Ge(111)
    Phys. Rev. B 101, 165411 (2020)


    L. Eschmann, A. Sabitova, R. Temirov, F.S. Tautz, P. Krüger, and M. Rohlfing
    Coverage-dependent anisotropy of the NTCDA/Ag(111) interface state dispersion
    Phys. Rev. B 100, 125155 (2019)

    M.-C. Heissenbüttel, P. Marauhn, T. Deilmann, P. Krüger, and M. Rohlfing
    Nature of the excited states of layered systems and molecular excimers: Exciplex states and their dependence on structure
    Phys. Rev. B 99, 035425 (2019)


    N. Aghdassi, P. Krüger, S. Linden, D. Dulson and H. Zacharias
    UV-induced formation of oxygen-derived dangling bonds on hydroxyl-terminated SiC
    J. Phys.: Condens. Matter 30, 435002 (2018)

    M. Drüppel, T. Deilmann, J. Noky, P. Marauhn, P. Krüger, and M. Rohlfing
    Electronic excitations in transition metal dichalcogenide monolayers from an LDA+GdW approach
    Phys. Rev. B 98, 155433 (2018)

    P. Eickholt, J. Noky, E. F. Schwier, K. Shimada, K. Miyamoto, T. Okuda, C. Datzer, M. Drüppel, P. Krüger, M. Rohlfing, and M. Donath
    Location of the valence band maximum in the band structure of anisotropic 1T'−ReSe2
    Phys. Rev. B 97, 165130 (2018)


    M. Drüppel, T. Deilmann, P. Krüger, and M. Rohlfing
    Diversity of trion states and substrate effects in the optical properties of an MoS2 monolayer
    Nat. Comm. 8, 2117 (2017)

    S. Stolwijk, A.B. Schmidt, K. Sakamoto, P. Krüger, and M. Donath
    Valley spin polarization of Tl/Si(111)
    Phys. Rev. Mat. 1, 064604 (2017)

    A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch
    Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T'-ReSe2
    Nano Lett. 17, 3202 (2017)

    C. Datzer, A. Zumbülte, J. Braun, T. Förster, A.B. Schmidt, J. Mi, B. Iversen, P. Hofmann, J. Minár, H. Ebert, P. Krüger, M. Rohlfing, and M. Donath
    Unraveling the spin structure of unoccupied states in Bi2Se3
    Phys. Rev. B 95, 115401 (2017)


    M.F.B. Green, C. Wagner, P. Leinen, T. Deilmann, P. Krüger, M. Rohlfing, F.S. Tautz, and R. Temirov
    Scanning quantum dot microscopy: A quantitative method to measure local electrostatic potential near surfaces
    Jap. J. Appl. Phys. 55, 08NA04 (2016)

    T. Förster, P. Krüger, and M. Rohlfing
    GWcalculations for Bi2Te3 and Sb2Te3 thin films: Electronic and topological properties
    Phys. Rev. B 93, 205442 (2016)

    T. Esat, B. Lechtenberg, T. Deilmann, C. Wagner, P. Krüger, R. Temirov, M. Rohlfing, F.B. Anders, and F.S. Tautz
    A chemically driven quantum phase transition in a two-molecule Kondo system
    Nature Physics 12, 867 (2016)
    WWU News (April 2016): Auf der Suche nach magnetischen Eigenschaften von Molekülen

    P. Eickholt, P. Krüger, S.D. Stolwijk, A.B. Schmidt, and M. Donath
    Effects of orbital composition in a pair of spin-orbit-split surface bands at Tl/Ge(111)
    Phys. Rev. B 93, 085412 (2016)


    T. Förster, P. Krüger, and M. Rohlfing
    Two-dimensional topological phases and electronic spectrum of Bi2Se3 thin films from GW calculations
    Phys. Rev. B 92, 201404(R) (2015)

    S.D. Stolwijk, K. Sakamoto, A.B. Schmidt, P. Krüger, and. M. Donath
    Spin texture with a twist in momentum space for Tl/Si(111)
    Phys. Rev. B 91, 245420 (2015)

    C. Wagner, M.F.B. Green, P. Leinen, T. Deilmann, P. Krüger, M. Rohlfing, R. Temirov, and F.S. Tautz
    Scanning Quantum Dot Microscopy
    Phys. Rev. Lett. 115, 026101 (2015)

    S.N.P. Wissing, K.T. Ritter, P. Krüger, A.B. Schmidt, and M. Donath
    Spin-dependent size of interband hybridization gap: The interplay of adlayer and substrate states in Pb/Cu(111)
    Phys. Rev. B 91, 201403(R) (2015)

    T. Esat, T. Deilmann, B. Lechtenberg, C. Wagner, P. Krüger, R. Temirov, F. Anders, M. Rohlfing, and F. Tautz
    Transfering spin into an extended π orbital of a large molecule
    Phys. Rev. B 91, 144415 (2015)

    T. Förster, P. Krüger, and M. Rohlfing
    Ab initio studies of adatom- and vacancy-induced band bending in Bi2Se3
    Phys. Rev. B 91, 035313 (2015)


    S.D. Stolwijk, K. Sakamoto, A.B. Schmidt, P. Krüger, and M. Donath
    Thin line of a Rashba-type spin texture: Unoccupied surface resonance of Tl/Si(111) along ΓM
    Phys. Rev. B 90, 161109(R) (2014)

    M. Drüppel, P. Krüger, and M. Rohlfing
    Strain tuning of Dirac states at the SnTe(001) surface
    Phys. Rev. B 90, 155312 (2014)

    J. Pollmann, X. Peng, J. Wieferink, and P. Krüger
    Adsorption of hydrogen and hydrocarbon molecules on SiC(001)
    Surface Science Reports 69, 55 (2014)

    F. Huerkamp, P. Krüger, and J. Pollmann
    Investigation of electron transmission through Co/C/Co magnetic tunnel junctions
    Phys. Rev. B 89, 125302 (2014)

    T. Deilmann, P. Krüger, M. Rohlfing, and D. Wegner
    Adsorption and STM imaging of tetracyanoethylene on Ag(001): An ab initio study
    Phys. Rev. B 89, 045405 (2014)


    S. Stolwijk, A. Schmidt, M. Donath, K. Sakamoto and P. Krüger
    Rotating Spin and Giant Splitting: Unoccupied Surface Electronic Structure of Tl/Si(111)
    Phys. Rev. Lett. 111, 176402 (2013)


    C. Sommer, P. Krüger, and J. Pollmann
    Optical spectra of alkali-metal fluorides
    Phys. Rev. B 86, 155212 (2012)

    C. Sommer, P. Krüger, and J. Pollmann
    Quasiparticle band structure of alkali-metal fluorides, oxides, and nitrides
    Phys. Rev. B 85, 165119 (2012)


    N. Aghdassi, R. Ostendorf, P. Krüger and H. Zacharias
    Angle-resolved inverse photoemission of H-etched 6H-SiC(0001)
    Surface Science 605, 788 (2011)

    C. Wieferink, P. Krüger, and J. Pollmann
    Influence of tip structure on tip-sample interaction forces at the KBr(001) surface: Results from ab initio investigations
    Phys. Rev. B 84, 195402 (2011)

    B. Stärk, P. Krüger, and J. Pollmann
    Magnetic anisotropy of thin Co and Ni films on diamond surfaces
    Phys. Rev. B. 84, 195316 (2011)

    C. Wieferink, P. Krüger, and J. Pollmann
    Simulations of friction force microscopy on the KBr(001) surface based on ab initio calculated tip-sample forces
    Phys. Rev. B 83, 235328 (2011)

  • 2010 - 2000

    J. Wieferink, P. Krüger, and J. Pollmann
    Ab-initio study of atomic hydrogen diffusion on the clean and hydrogen-terminated Si(001) surface
    Phys. Rev. B 82, 075323 (2010)

    B. Stärk, P. Krüger, and J. Pollmann
    Magnetic Properties of Co and Ni Multilayers on Diamond Surfaces
    Proceedings of NIC Symposium, 24-25 February 2010, FZ-Jülich, p. 207 (2010)

    B. Stärk, P. Krüger, and J. Pollmann
    Cobalt multilayers on diamond surfaces: An ab-initio study
    Phys. Rev. B 81, 035321 (2010)


    B. Baumeier, P. Krüger, and J. Pollmann
    First-principles investigation of the atomic and electronic structure of the 4H-SiC(1102)-c(2x2) surface
    Phys. Rev. B 78, 145318 (2008)

    J. Wieferink, P. Krüger, and J. Pollmann
    First-principles study of benzene adsorption on the SiC(001)-(3x2) surface
    Phys. Rev. B 78, 165315 (2008)

    B. Baumeier, P. Krüger, J. Pollmann, and G. Vajenine
    Electronic structure of alkali-metal fluorides, oxides and nitrides: Density-functional calculations including self-interaction corrections
    Phys. Rev. B 78, 125111 (2008)

    P. Krüger, B. Baumeier, and J. Pollmann
    First-Principles Investigation of an Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface
    Phys. Rev. B 77, 085329 (2008)

    X. Peng, P. Krüger, and J. Pollmann
    Adsorption processes of hydrogen molecules on SiC(001), Si(001), and C(001) surfaces
    New Journal of Physics 10, 125028 (2008)

    M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
    Desorption force on hydrogen atoms from resonant excitations of the H:Si(001)-(2x1) surface
    Surf. Sci. 602, 3208 (2008)


    B. Baumeier, P. Krüger, and J. Pollmann
    Bulk and surface electronic structure of alkaline-earth metal oxides: Bound surface and image-potential states from first principles
    Phys. Rev. B 76, 205404 (2007)

    X. Peng, P. Krüger, and J. Pollmann
    Hydrogenated SiC(001)-(3x2) surface: Semiconducting and metallic structures
    Phys. Rev. B 76, 125303 (2007)

    B. Baumeier, P. Krüger, and J. Pollmann
    Structural, elastic, and electronic properties of SiC, BN, and BeO nanotubes
    Phys. Rev. B 76, 085407 (2007)

    J. Wieferink, P. Krüger, and J. Pollmann
    First-principles study of acetylene adsorption on b-SiC(001)-(3x2)
    Phys. Rev. B 75, 153305 (2007)

    X. Peng, P. Krüger, and J. Pollmann
    Why thermal H2 molecules adsorb on SiC(001)-c(4-2) and not on SiC(001)-(3x2) at room temperature
    Phys. Rev. B 75, 073409 (2007)

    B. Baumeier, P. Krüger, and J. Pollmann
    Atomic and electronic structure of BeO and the BeO(1010) surface: An ab initio investigation
    Phys. Rev. B 75, 045323 (2007)


    J. Wieferink, P. Krüger, and J. Pollmann
    Improved hybrid algorithm with Gaussian basis sets and plane waves: First-principles calculations of ethylene adsorption on β-SiC(001)-(3x2)
    Phys. Rev. B 74, 205311 (2006)

    N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
    Electronic excitations of the H:Si(001)-(2x1) monohydride surface
    Phys. Rev. B 74, 155405 (2006)

    X. Peng, J. Wieferink, P. Krüger, and J. Pollmann
    Structural and Electronic Properties of Clean and Adsorbate-Covered (001) Surfaces of Cubic SiC
    Proceedings of NIC Symposium, 1-2 March 2006, p. 135, FZ-Jülich (2006)

    X. Peng, P. Krüger and J. Pollmann
    Hydrogen-induced metallization of the 3C-SiC(001)-(3x2) surface
    Surf. Sci. 600, 3564 (2006)

    J. Wieferink, P. Krüger, and J. Pollmann
    First-principles study of acetylene and ethylene adsorption on β-SiC(001)-(2x1)
    Phys. Rev. B 73, 115309 (2006)

    B. Baumeier, P. Krüger, and J. Pollmann
    Self-interaction-corrected pseudopotentials for silicon carbide
    Phys. Rev. B 73, 195205 (2006)

    P. Krüger, and J. Pollmann
    Generalized reconstruction model of SiC(001)-(nx2) surfaces and Si ad-dimer nanostrings
    Phys. Rev. B 73, 035327 (2006)


    M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
    Dynamics of excited electronic states at clean and adsorbate-covered insulator surface
    Surf. Sci. 593, Issues 1-3, p. 19-25 (2005)

    X. Peng, P. Krüger, and J. Pollmann
    Metallization of the 3C-SiC(001)-(3x2) surface induced by hydrogen adsorption: A first-principles investigation
    Phys. Rev. B 72, 245320 (2005)

    N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
    Femtosecond dynamics of excited states of CO adsorbed on MgO(001)-(1x1)
    Phys. Rev. B 71, 045407 (2005)


    J. Pollmann, and P. Krüger
    Reconstruction of cubic SiC surfaces
    J. Phys.: Condens. Matter 16, S1659 - S1703 (2004)

    N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
    Fast Initial Decay of Molecular Excitations at Insulator Surfaces
    Phys. Rev. Lett. 92, 216805 (2004)

    U. Freking, P. Krüger, A. Mazur, and J. Pollmann
    Surface phonons of Si(001)-(1x1) dihydride
    Phys. Rev. B 69, 035315 (2004)


    J. Pollmann and P. Krüger
    Green Functions in the Theory of Semiconductor Surfaces
    Prog. Surf. Sci. 74, 269 (2003)

    M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
    Image States and Excitons at Insulator Surfaces with Negative Electron Affinity
    Phys. Rev. Lett. 91, 256802 (2003)

    N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
    Electronic excitations of CO adsorbed on MgO(001)
    Appl. Phys. A 78, 213 (2003)

    F. Sökeland, M. Rohlfing, P. Krüger, and J. Pollmann
    Density functional and quasiparticle band-structure calculations for GaxAl1-xN and GaxIn1-xN alloys
    Phys. Rev. B 68, 075203 (2003)

    N.-P. Wang, M. Rohlfing, P. Krüger and J. Pollmann
    Quasiparticle band structure and optical spectrum of LiF(001)
    Phys. Rev. B 67, 115111 (2003)


    Fu-He Wang, P. Krüger and J. Pollmann
    First principles investigation of the C-terminated β-SiC(001)-c(2x2) surface
    Phys. Rev. B 66, 195335 (2002)

    J. Pollmann, P. Krüger, A. Mazur and M. Rohlfing
    Electrons, Phonons and Excitons at Semiconductor Surfaces
    Festkörperprobleme/Advances in Solid State Physics, Springer Verlag, Heidelberg (2002), pp. 189-206

    Fu-He Wang, P. Krüger, and J. Pollmann
    Surface electronic structure of GaN(0001)-(1x1): Comparison between theory and experiment
    Surf. Sci. 499, Issues 2-3, p. 193-202 (2002)

    C. Kreis, S. Werth, R. Adelung, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
    Surface resonances at transition metal dichalcogenide heterostructures
    Phys. Rev. B 65, 153314 (2002)


    Fu-He Wang, P. Krüger, and J. Pollmann
    Electronic structure of 1x1 GaN(0001) and GaN(0001) surfaces
    Phys. Rev. B 64, 035305 (2001)

    K. Rossnagel, O. Seifarth, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
    Fermi surface of 2H-NbSe2 and its implications on the charge-density-wave mechanism
    Phys. Rev. B 64, 235119 (2001)

    K. Rossnagel, L. Kipp, M. Skibowski, C. Solterbeck, T. Strasser, W. Schattke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
    Three-dimensional Fermi surface determination by ARPES
    Phys. Rev. B 63, 125104 (2001)

    Th. Böker, R. Severin, A. Müller, C. Janowitz, R. Manzke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
    Band structures of MoS2, MoSe2 and MoTe2: Angular-resolved photoelectron spectroscopy in the constant-final-state mode and ab-initio calculations
    Phys. Rev. B 64, 235305 (2001)

    R. Kucharczyk, U. Freking, P. Krüger and J. Pollmann
    Electronic properties of AlGaAs-based biperiodic superlattices via pseudopotential calculations
    Surf. Sci. 482-485, 612 (2001)


    J. Pollmann and P. Krüger
    Electronic Structure of Semiconductor Surfaces
    Chapter 2, in Handbook of Surface Science, Elsevier Science B.V. (2000), pp. 96-208

    W. Lu, P. Krüger, and J. Pollmann
    Atomic and electronic structure of silicate adlayers on polar hexagonal SiC surfaces
    Phys. Rev. B 61, 13737 (2000)

    C. Stampfl, Ch. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann
    Native defects and impurities in InN: First-principles studies using the local-density approximation and self- interaction and relaxation-corrected pseudopotentials
    Phys. Rev. B 61, R7846 (2000)

    W. Lu, P. Krüger, and J. Pollmann
    Ab-initio studies of the β-SiC(001)-(5x2) surface
    Phys. Rev. B 61, 2680 (2000)

    J. Pollmann, P. Krüger and W. Lu
    Theory of Structural and Electronic Properties of Cubic SiC Surfaces
    Materials Science Forum 338-342, 369 (2000)

    W. Lu, P. Krüger and J. Pollmann
    Ab initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√3 x √3)-R30° Reconstruction
    Materials Science Forum 338-342, 349 (2000)

  • 1999 - 1982

    D. Voß, P. Krüger, A. Mazur, and J. Pollmann
    Atomic and electronic structure of WSe2 from ab-initio theory: Bulk crystal and thin film systems
    Phys. Rev. B 60, 14311 (1999)

    W. Lu, P. Krüger, and J. Pollmann
    Atomic and electronic structure of β-SiC(001)-(3x2)
    Phys. Rev. B 60, 2495 (1999)


    J. Neuhausen, V. K. Evstaf'iev, Th. Block, E. W. Finckh, W. Tremel, L. Augustin, H. Fuchs, D. Voß, P. Krüger, A. Mazur, and J. Pollmann
    Scanning probe microscopy study of the metal-rich layered chalcogenides TaM2Te2 (M = Co, Ni)
    Chem. Mater. 10 (12), pp. 38703878 (1998)

    W. Lu, P. Krüger, and J. Pollmann
    Missing-row asymmetric-dimer reconstruction of SiC(001)- c(4x2)
    Phys. Rev. Lett. 81, 2292 (1998)

    D. Vogel, P. Krüger, and J. Pollmann
    Ab-initio electronic structure calculations of silver halides with SIRC pseudopotentials
    Phys. Rev. B 58, 3865 (1998)

    V. Gräschus, A. Mazur, P. Krüger and J. Pollmann
    Surface phonons of As:Si(111)-(1x1) and As:Si(001)- (2x1)
    Phys. Rev. B 57, 13175 (1998)

    M. Rohlfing, P. Krüger, and J. Pollmann
    Role of semicored electrons in quasiparticle band- structure calculations
    Phys. Rev. B 57, 6485 (1998)

    D. Vogel, P. Krüger, and J. Pollmann
    Ab-initio calculations of CdS, CdSe and CdTe surfaces
    Surf. Sci. 402-404, 774 (1998)

    G. Hirsch, P. Krüger, and J. Pollmann
    Surface passivation of GaAs(001) by sulfur: ab-initio studies
    Surf. Sci. 402-404, 778 (1998)

    K. Würde, P. Krüger, A. Mazur, and J. Pollmann
    First-principles investigations of the atomic and electronic structure of Pb, Sn and Ge adsorbed on the Ge(111)-(√3 x √5) surface
    Surface Review and Letters 5, 105 (1998)

    M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
    Structure of 6H-SiC(0001) surfaces from ab-initio calculations
    Surface Review and Letters 5, 199 (1998)


    M. Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle calculations of semicore states in Si, Ge, and CdS
    Phys. Rev. B 56, R7065 (1997)

    M. Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle calculations of surface core-level shifts
    Phys. Rev. B 56, 2191 (1997)

    J. Pollmann, P. Krüger, and M. Sabisch
    Atomic and electronic structure of SiC surfaces from ab- initio calculations
    phys. stat. sol. (b) 202, 421 (1997)

    J. Pollmann, P. Krüger, and M. Sabisch
    Atomic and electronic structure of SiC surfaces from ab-initio calculations
    phys. stat. sol. (b) 202, 421 (1997)

    D. Vogel, P. Krüger, and J. Pollmann
    Structural and electronic properties of group III- nitrides
    Phys. Rev. B 55, 12836 (1997)

    M. Sabisch, P. Krüger, and J. Pollmann
    Ab-initio calculations of structural and electronic properties of 6H-SiC(0001) surfaces
    Phys. Rev. B 55, 10561 (1997)


    D. Vogel, P. Krüger, and J. Pollmann
    New pseudopotentials for II-VI semiconductors
    in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
    World Scientific, 1996, p. 617

    M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
    Electronic structure of 6H-SiC(0001) surfaces
    in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
    World Scientific, 1996, p. 819

    M. Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle calculations for bulk semiconductors and their surfaces
    in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
    World Scientific, 1996, p. 297

    P. Krüger and J. Pollmann
    Initial stages of carbon adsorption at the H:C(001) surface
    in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
    World Scientific, 1996, p. 947

    J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch, and D. Vogel
    Ab-initio calculations of structural and electronic properties of prototype surfaces of group IV, III-V and II-VI semiconductors
    Appl. Surf. Science 104/105, 1 (1996)

    Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle band structures of clean, hydrogen- and sulfur-terminated Ge(001) surfaces
    Phys. Rev. B 54, 13759 (1996)

    D. Vogel, P. Krüger, and J. Pollmann
    Self-interaction and relaxation-corrected pseudopotentials for II-VI semiconductors
    Phys. Rev. B 54, 5495 (1996)

    M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing, and J. Pollmann
    First-principles calculations of β-SiC(001) surfaces
    Phys. Rev. B 53, 13121 (1996)


    M. Rohlfing, P. Krüger and J. Pollmann
    Quasiparticle Band Structure of CdS
    Phys. Rev. Lett. 75, 3489 (1995)

    M. Rohlfing, P. Krüger and J. Pollmann
    Metallic nature of the symmetric dimer model of Si(001)-(2x1)
    Phys. Rev. B 52, 13753 (1995)

    D. Vogel, P. Krüger and J. Pollmann
    Ab initio electronic-structure calculations for II-VI semiconductors using self-interaction-corrected pseudopotentials
    Phys. Rev. B 52, R 14316 (1995)

    M. Rohlfing, P. Krüger and J. Pollmann
    Efficient scheme for GW quasiparticle bandstructure calculations with applications to bulk Si and to the Si(001)-(2x1) surface
    Phys. Rev. B 52, 1905 (1995)

    M. Sabisch, P. Krüger and J. Pollmann
    Ab initio calculations of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity
    Phys. Rev. B 51, 13367 (1995)

    P. Krüger and J. Pollmann
    Dimer Reconstruction of Diamond, Si and Ge(001) surfaces
    Phys. Rev. Lett. 74, 1155 (1995)


    P. Krüger and J. Pollmann
    Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001)
    Appl. Phys. A 59, 487 (1994)

    P. Schröer, P. Krüger, and J. Pollmann
    Selfconsistent electronic structure calculations of the surfaces of the wurtzite compounds ZnO and CdS
    Phys. Rev. B 49, 17092 (1994)

    P. Krüger and J. Pollmann
    Bond Length of Ge Dimers at Si(001)
    Phys. Rev. Lett. 72, 1130 C (1994)

    P. Schröer, P. Krüger, and J. Pollmann
    First-Principles Atomic and Electronic Structure Calculations of the ZnO Surface
    Proceedings of ICFSI-4, World Scientific, Singapore, 1994, p. 85

    P. Krüger and J. Pollmann
    Dimer Formation and Electronic Properties of ordered Adlayers at Si(001): Results From Local Density Theory
    Proceedings of the 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI-4), ed. by B. Lengeler, H. Lüth, W. Mönch and J. Pollmann, (World Scientific, Singapore, 1994) p. 108


    P. Schröer, P. Krüger, and J. Pollmann
    Ab initio calculations of the electronic structure of the wurtzite compounds CdS and CdSe
    Phys. Rev. B 48, 18264 (1993)

    M. Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle band-structure calculations for C, Si, Ge, GaAs and SiC using Gaussian-orbital basis sets
    Phys. Rev. B 48, 17791 (1993)

    P. Schröer, P. Krüger and J. Pollmann
    First-principles Electronic Structure of the Wurtzite Semiconductors ZnO and ZnS
    Phys. Rev. B 47, 6971 (1993)

    P. Krüger and J. Pollmann
    Chemical Trends in Adsorption on Semiconductor Surfaces: Results from Local Density Theory
    Proceedings of the 16th Int. Seminar on Surface Physics, Kudowa, Poland 1992; Progress in Surface Science, 42, 351 (1993)

    P. Krüger and J. Pollmann
    Ab-Initio Calculations of Si, As, S, Se and Cl Adsorption on Si(001) Surfaces
    Phys. Rev. B 47, 1898 (1993)


    J. Pollmann, P. Krüger and A. Mazur
    Electronic, Structural and Vibronic Properties of Chalcogen Monolayers on (001) Surfaces of Elemental Semiconductors
    Proceedings of the 3rd Int. Conf. on the Formation of Semiconductor Interfaces, Rom 1991, Appl. Surf. Science 56- 58, 193 (1992)


    P. Krüger and J. Pollmann
    Selfconsistent Electronic Structure of Clean and Adsorbate-Covered Ge(001) Surfaces
    Proceedings of the Vth Symposium on Surface Physics, Chlum Castle, Czechoslowakia, 1990, Progress in Surface Science 35, 3 (1991)

    P. Krüger and J. Pollmann
    Self-Consistent Surface Electronic Structure for Semi-infinite Semiconductors from Scattering Theory
    Physica B: Condensed Matter 172, 155 (1991)


    J. Pollmann and P. Krüger
    Total Energy and Electronic Structure of S: Ge(001) and Se: Ge(001)
    Proceedings of the 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, World Scientific (1990) p. 91

    E. Landemark, R.I.G. Uhrberg, P. Krüger and J. Pollmann
    Surface Electronic Structure of Ge(001)-(2x1) : Experiment and Theory
    Surf. Sci. Lett. 236, L359 (1990)

    P. Krüger and J. Pollmann
    First-Principles Theory of Sulfur Adsorption on Semi- Infinite Ge(001)
    Phys. Rev. Lett. 64, 1808 (1990)

    P. Krüger and J. Pollmann
    Adsorption of Sulfur on Ge(001): First-principles Calculation of Structural and Electronic Properties
    Proceedings of the 7th Int. Conf. on Solid Surfaces (ICSS-7), Köln 1989, Vacuum 41, 638 (1990)


    P. Krüger and J. Pollmann
    Scattering-Theoretical Method for Semiconductor Surfaces: Self-consistent Formulation and Application to Si(001)-(2x1)
    Phys. Rev. B 38, 10578 (1988)


    J. Pollmann, P. Krüger and A. Mazur
    Self-Consistent Electronic Structure of Semiinfinite Si(001)-(2x1) and Ge(001)-(2x1) with Model Calculations for Scanning Tunneling Microscopy
    J. Vac. Sci. Technol. B5, 945 (1987)


    J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
    Selfconsistent Electronic Structure of Semiinfinite Ge(001)-(2x1)
    Proceedings of the 18. Int. Conf. on the Physics of Semiconductors, Stockholm, edited by Olaf Engström (World Scientific, Singapore, 1986) p. 81

    P. Krüger. A. Mazur, J. Pollmann and G. Wolfgarten
    First-Principles Electronic Structure Theory for Semiinfinite Semiconductors with Applications to Ge(001)-(2x1) and Si(001)-(2x1)
    Phys. Rev. Lett. 57, 1468 (1986)

    J. Pollmann. R. Kalla, P. Krüger, A. Mazur and G. Wolfgarten
    Atomic, Electronic, and Vibronic Structure of Semiconductor Surfaces
    Appl. Physics A 41, 21 (1986)


    G. Wolfgarten, P. Krüger and J. Pollmann
    Self-Consistent Scattering Theoretical Method for Surfaces: Application to Si(100)
    Sol. State Commun. 54, 839 (1985)

    P. Krüger, G. Wolfgarten and J. Pollmann
    Nonlocal Density Functional Theory of Solids: Applications of the Weighted Density Approximation to Silicon
    Sol. State Commun. 53, 885 (1985)

    J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
    Electronic Properties of Semiconductor Surfaces and Interfaces: Selected Results from Green's Function Studies
    Proceedings of ECOSS6, York, April 1984
    Surf. Sci. 152/153, 977 (1985)


    P. Krüger and J. Pollmann
    Green's Function Studies of Ge Adsorption on GaAs(110)
    Phys. Rev. B 30, 3406 (1984)

    P. Krüger and J. Pollmann
    Ge-GaAs Heterostructures: From Chemisorption to Heterojunction Interface Formation
    J. Vac. Sci. Technol. B2, 415 (1984)


    J. Beyer, P. Krüger, A. Mazur, J. Pollmann and M. Schmeits
    Electronic Structure Studies of Hydrogen Adsorption and of Vacancies at the Relaxed GaAs(110) Surface
    J. Vac. Sci. Technol. 21, 358 (1982)

Projekte

  • abgeschlossene Projekte (als beteiligte Person)

    • Metallisierung von SiC Oberflächen durch Wasserstoff-Adsorption
      DFG, Förderung 2005-2010

    • Angeregte Zustände von adsorbierten Molekülen auf Halbleiter- und Isolatoroberflächen
      DFG, Förderung 2000-2010

    • Ab-initio Berechnung des elektronischen Spektrums von Halbleiterlegierungen mit großer Bandlücke
      DFG, Förderung 1999-2003

    • Strukturelle und elektronische Eigenschaften reiner und adsorbatbedeckter Oberflächen von kubischem und hexagonalem Siliziumkarbid
      DFG, Förderung 1997-2002
    • Theoretische Studien Elektronischer und Struktureller Eigenschaften von Gruppe III-Nitriden sowie ihrer Oberflächen und Grenzfläche
      DFG, Förderung 1997-2001