Publikationen

  • 2020 - 2011

    • S. Schemmelmann, P. Krüger, F. Schöttke, and M. Donath
      Rashba-split surface state and spin-dependent photon emission from Re(0001) at Γ
      Phys. Rev. B 104, 205425 (2021)
    • M.-C. Heißenbüttel, T. Deilmann, P. Krüger, and M. Rohlfing
      Valley-Dependent Interlayer Excitons in Magnetic WSe2/CrI3
      Nano Lett. 2021 (June 2, 2021)
    • T. Deilmann, P. Krüger, and M. Rohlfing
      Ab initio studies of exciton g factors: Monolayer transition metal dichalcogenides in magnetic fields
      Phys. Rev. Lett. 124, 226402 (2020)
    • P. Eickholt, P. Krüger, S.D. Stolwijk, A.B. Schmidt, and M. Donath
      Breaking time-reversal symmetry at the M point: Spin signal from a surface state on Tl/Ge(111)
      Phys. Rev. B 101, 165411 (2020)
    • L. Eschmann, A. Sabitova, R. Temirov, F.S. Tautz, P. Krüger, and M. Rohlfing
      Coverage-dependent anisotropy of the NTCDA/Ag(111) interface state dispersion
      Phys. Rev. B 100, 125155 (2019)
    • M.-C. Heissenbüttel, P. Marauhn, T. Deilmann, P. Krüger, and M. Rohlfing
      Nature of the excited states of layered systems and molecular excimers: Exciplex states and their dependence on structure
      Phys. Rev. B 99, 035425 (2019)
    • N. Aghdassi, P. Krüger, S. Linden, D. Dulson and H. Zacharias
      UV-induced formation of oxygen-derived dangling bonds on hydroxyl-terminated SiC
      J. Phys.: Condens. Matter 30, 435002 (2018)
    • M. Drüppel, T. Deilmann, J. Noky, P. Marauhn, P. Krüger, and M. Rohlfing
      Electronic excitations in transition metal dichalcogenide monolayers from an LDA+GdW approach
      Phys. Rev. B 98, 155433 (2018)
    • P. Eickholt, J. Noky, E. F. Schwier, K. Shimada, K. Miyamoto, T. Okuda, C. Datzer, M. Drüppel, P. Krüger, M. Rohlfing, and M. Donath
      Location of the valence band maximum in the band structure of anisotropic 1T'−ReSe2
      Phys. Rev. B 97, 165130 (2018)
    • M. Drüppel, T. Deilmann, P. Krüger, and M. Rohlfing
      Diversity of trion states and substrate effects in the optical properties of an MoS2 monolayer
      Nat. Comm. 8, 2117 (2017)
    • S. Stolwijk, A.B. Schmidt, K. Sakamoto, P. Krüger, and M. Donath
      Valley spin polarization of Tl/Si(111)
      Phys. Rev. Mat. 1, 064604 (2017)
    • A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch
      Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T'-ReSe2
      Nano Lett. 17, 3202 (2017)
    • C. Datzer, A. Zumbülte, J. Braun, T. Förster, A.B. Schmidt, J. Mi, B. Iversen, P. Hofmann, J. Minár, H. Ebert, P. Krüger, M. Rohlfing, and M. Donath
      Unraveling the spin structure of unoccupied states in Bi2Se3
      Phys. Rev. B 95, 115401 (2017)
    • M.F.B. Green, C. Wagner, P. Leinen, T. Deilmann, P. Krüger, M. Rohlfing, F.S. Tautz, and R. Temirov
      Scanning quantum dot microscopy: A quantitative method to measure local electrostatic potential near surfaces
      Jap. J. Appl. Phys. 55, 08NA04 (2016)
    • T. Förster, P. Krüger, and M. Rohlfing
      GWcalculations for Bi2Te3 and Sb2Te3 thin films: Electronic and topological properties
      Phys. Rev. B 93, 205442 (2016)
    • T. Esat, B. Lechtenberg, T. Deilmann, C. Wagner, P. Krüger, R. Temirov, M. Rohlfing, F.B. Anders, and F.S. Tautz
      A chemically driven quantum phase transition in a two-molecule Kondo system
      Nature Physics 12, 867 (2016)
      WWU News (April 2016): Auf der Suche nach magnetischen Eigenschaften von Molekülen
    • P. Eickholt, P. Krüger, S.D. Stolwijk, A.B. Schmidt, and M. Donath
      Effects of orbital composition in a pair of spin-orbit-split surface bands at Tl/Ge(111)
      Phys. Rev. B 93, 085412 (2016)
    • T. Förster, P. Krüger, and M. Rohlfing
      Two-dimensional topological phases and electronic spectrum of Bi2Se3 thin films from GW calculations
      Phys. Rev. B 92, 201404(R) (2015)
    • S.D. Stolwijk, K. Sakamoto, A.B. Schmidt, P. Krüger, and. M. Donath
      Spin texture with a twist in momentum space for Tl/Si(111)
      Phys. Rev. B 91, 245420 (2015)
    • C. Wagner, M.F.B. Green, P. Leinen, T. Deilmann, P. Krüger, M. Rohlfing, R. Temirov, and F.S. Tautz
      Scanning Quantum Dot Microscopy
      Phys. Rev. Lett. 115, 026101 (2015)
    • S.N.P. Wissing, K.T. Ritter, P. Krüger, A.B. Schmidt, and M. Donath
      Spin-dependent size of interband hybridization gap: The interplay of adlayer and substrate states in Pb/Cu(111)
      Phys. Rev. B 91, 201403(R) (2015)
    • T. Esat, T. Deilmann, B. Lechtenberg, C. Wagner, P. Krüger, R. Temirov, F. Anders, M. Rohlfing, and F. Tautz
      Transfering spin into an extended π orbital of a large molecule
      Phys. Rev. B 91, 144415 (2015)
    • T. Förster, P. Krüger, and M. Rohlfing
      Ab initio studies of adatom- and vacancy-induced band bending in Bi2Se3
      Phys. Rev. B 91, 035313 (2015)
    • S.D. Stolwijk, K. Sakamoto, A.B. Schmidt, P. Krüger, and M. Donath
      Thin line of a Rashba-type spin texture: Unoccupied surface resonance of Tl/Si(111) along ΓM
      Phys. Rev. B 90, 161109(R) (2014)
    • M. Drüppel, P. Krüger, and M. Rohlfing
      Strain tuning of Dirac states at the SnTe(001) surface
      Phys. Rev. B 90, 155312 (2014)
    • J. Pollmann, X. Peng, J. Wieferink, and P. Krüger
      Adsorption of hydrogen and hydrocarbon molecules on SiC(001)
      Surface Science Reports 69, 55 (2014)
    • F. Huerkamp, P. Krüger, and J. Pollmann
      Investigation of electron transmission through Co/C/Co magnetic tunnel junctions
      Phys. Rev. B 89, 125302 (2014)
    • T. Deilmann, P. Krüger, M. Rohlfing, and D. Wegner
      Adsorption and STM imaging of tetracyanoethylene on Ag(001): An ab initio study
      Phys. Rev. B 89, 045405 (2014)
    • S. Stolwijk, A. Schmidt, M. Donath, K. Sakamoto and P. Krüger
      Rotating Spin and Giant Splitting: Unoccupied Surface Electronic Structure of Tl/Si(111)
      Phys. Rev. Lett. 111, 176402 (2013)
    • C. Sommer, P. Krüger, and J. Pollmann
      Optical spectra of alkali-metal fluorides
      Phys. Rev. B 86, 155212 (2012)
    • C. Sommer, P. Krüger, and J. Pollmann
      Quasiparticle band structure of alkali-metal fluorides, oxides, and nitrides
      Phys. Rev. B 85, 165119 (2012)
    • N. Aghdassi, R. Ostendorf, P. Krüger and H. Zacharias
      Angle-resolved inverse photoemission of H-etched 6H-SiC(0001)
      Surface Science 605, 788 (2011)
    • C. Wieferink, P. Krüger, and J. Pollmann
      Influence of tip structure on tip-sample interaction forces at the KBr(001) surface: Results from ab initio investigations
      Phys. Rev. B 84, 195402 (2011)
    • B. Stärk, P. Krüger, and J. Pollmann
      Magnetic anisotropy of thin Co and Ni films on diamond surfaces
      Phys. Rev. B. 84, 195316 (2011)
    • C. Wieferink, P. Krüger, and J. Pollmann
      Simulations of friction force microscopy on the KBr(001) surface based on ab initio calculated tip-sample forces
      Phys. Rev. B 83, 235328 (2011)

  • 2010 - 2000

  • 1999 - 1982

    • D. Voß, P. Krüger, A. Mazur, and J. Pollmann
      Atomic and electronic structure of WSe2 from ab-initio theory: Bulk crystal and thin film systems
      Phys. Rev. B 60, 14311 (1999)
    • W. Lu, P. Krüger, and J. Pollmann
      Atomic and electronic structure of β-SiC(001)-(3x2)
      Phys. Rev. B 60, 2495 (1999)
    • J. Neuhausen, V. K. Evstaf'iev, Th. Block, E. W. Finckh, W. Tremel, L. Augustin, H. Fuchs, D. Voß, P. Krüger, A. Mazur, and J. Pollmann
      Scanning probe microscopy study of the metal-rich layered chalcogenides TaM2Te2 (M = Co, Ni)
      Chem. Mater. 10 (12), pp. 38703878 (1998)
    • W. Lu, P. Krüger, and J. Pollmann
      Missing-row asymmetric-dimer reconstruction of SiC(001)- c(4x2)
      Phys. Rev. Lett. 81, 2292 (1998)
    • D. Vogel, P. Krüger, and J. Pollmann
      Ab-initio electronic structure calculations of silver halides with SIRC pseudopotentials
      Phys. Rev. B 58, 3865 (1998)
    • V. Gräschus, A. Mazur, P. Krüger and J. Pollmann
      Surface phonons of As:Si(111)-(1x1) and As:Si(001)- (2x1)
      Phys. Rev. B 57, 13175 (1998)
    • M. Rohlfing, P. Krüger, and J. Pollmann
      Role of semicored electrons in quasiparticle band- structure calculations
      Phys. Rev. B 57, 6485 (1998)
    • D. Vogel, P. Krüger, and J. Pollmann
      Ab-initio calculations of CdS, CdSe and CdTe surfaces
      Surf. Sci. 402-404, 774 (1998)
    • G. Hirsch, P. Krüger, and J. Pollmann
      Surface passivation of GaAs(001) by sulfur: ab-initio studies
      Surf. Sci. 402-404, 778 (1998)
    • K. Würde, P. Krüger, A. Mazur, and J. Pollmann
      First-principles investigations of the atomic and electronic structure of Pb, Sn and Ge adsorbed on the Ge(111)-(√3 x √5) surface
      Surface Review and Letters 5, 105 (1998)
    • M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
      Structure of 6H-SiC(0001) surfaces from ab-initio calculations
      Surface Review and Letters 5, 199 (1998)
    • M. Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle calculations of semicore states in Si, Ge, and CdS
      Phys. Rev. B 56, R7065 (1997)
    • M. Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle calculations of surface core-level shifts
      Phys. Rev. B 56, 2191 (1997)
    • J. Pollmann, P. Krüger, and M. Sabisch
      Atomic and electronic structure of SiC surfaces from ab- initio calculations
      phys. stat. sol. (b) 202, 421 (1997)
    • J. Pollmann, P. Krüger, and M. Sabisch
      Atomic and electronic structure of SiC surfaces from ab-initio calculations
      phys. stat. sol. (b) 202, 421 (1997)
    • D. Vogel, P. Krüger, and J. Pollmann
      Structural and electronic properties of group III- nitrides
      Phys. Rev. B 55, 12836 (1997)
    • M. Sabisch, P. Krüger, and J. Pollmann
      Ab-initio calculations of structural and electronic properties of 6H-SiC(0001) surfaces
      Phys. Rev. B 55, 10561 (1997)
    • D. Vogel, P. Krüger, and J. Pollmann
      New pseudopotentials for II-VI semiconductors
      in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
      World Scientific, 1996, p. 617
    • M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
      Electronic structure of 6H-SiC(0001) surfaces
      in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
      World Scientific, 1996, p. 819
    • M. Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle calculations for bulk semiconductors and their surfaces
      in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
      World Scientific, 1996, p. 297
    • P. Krüger and J. Pollmann
      Initial stages of carbon adsorption at the H:C(001) surface
      in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
      World Scientific, 1996, p. 947
    • J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch, and D. Vogel
      Ab-initio calculations of structural and electronic properties of prototype surfaces of group IV, III-V and II-VI semiconductors
      Appl. Surf. Science 104/105, 1 (1996)
    • Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle band structures of clean, hydrogen- and sulfur-terminated Ge(001) surfaces
      Phys. Rev. B 54, 13759 (1996)
    • D. Vogel, P. Krüger, and J. Pollmann
      Self-interaction and relaxation-corrected pseudopotentials for II-VI semiconductors
      Phys. Rev. B 54, 5495 (1996)
    • M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing, and J. Pollmann
      First-principles calculations of β-SiC(001) surfaces
      Phys. Rev. B 53, 13121 (1996)
    • M. Rohlfing, P. Krüger and J. Pollmann
      Quasiparticle Band Structure of CdS
      Phys. Rev. Lett. 75, 3489 (1995)
    • M. Rohlfing, P. Krüger and J. Pollmann
      Metallic nature of the symmetric dimer model of Si(001)-(2x1)
      Phys. Rev. B 52, 13753 (1995)
    • D. Vogel, P. Krüger and J. Pollmann
      Ab initio electronic-structure calculations for II-VI semiconductors using self-interaction-corrected pseudopotentials
      Phys. Rev. B 52, R 14316 (1995)
    • M. Rohlfing, P. Krüger and J. Pollmann
      Efficient scheme for GW quasiparticle bandstructure calculations with applications to bulk Si and to the Si(001)-(2x1) surface
      Phys. Rev. B 52, 1905 (1995)
    • M. Sabisch, P. Krüger and J. Pollmann
      Ab initio calculations of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity
      Phys. Rev. B 51, 13367 (1995)
    • P. Krüger and J. Pollmann
      Dimer Reconstruction of Diamond, Si and Ge(001) surfaces
      Phys. Rev. Lett. 74, 1155 (1995)
    • P. Krüger and J. Pollmann
      Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001)
      Appl. Phys. A 59, 487 (1994)
    • P. Schröer, P. Krüger, and J. Pollmann
      Selfconsistent electronic structure calculations of the surfaces of the wurtzite compounds ZnO and CdS
      Phys. Rev. B 49, 17092 (1994)
    • P. Krüger and J. Pollmann
      Bond Length of Ge Dimers at Si(001)
      Phys. Rev. Lett. 72, 1130 C (1994)
    • P. Schröer, P. Krüger, and J. Pollmann
      First-Principles Atomic and Electronic Structure Calculations of the ZnO Surface
      Proceedings of ICFSI-4, World Scientific, Singapore, 1994, p. 85
    • P. Krüger and J. Pollmann
      Dimer Formation and Electronic Properties of ordered Adlayers at Si(001): Results From Local Density Theory
      Proceedings of the 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI-4), ed. by B. Lengeler, H. Lüth, W. Mönch and J. Pollmann, (World Scientific, Singapore, 1994) p. 108
    • P. Schröer, P. Krüger, and J. Pollmann
      Ab initio calculations of the electronic structure of the wurtzite compounds CdS and CdSe
      Phys. Rev. B 48, 18264 (1993)
    • M. Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle band-structure calculations for C, Si, Ge, GaAs and SiC using Gaussian-orbital basis sets
      Phys. Rev. B 48, 17791 (1993)
    • P. Schröer, P. Krüger and J. Pollmann
      First-principles Electronic Structure of the Wurtzite Semiconductors ZnO and ZnS
      Phys. Rev. B 47, 6971 (1993)
    • P. Krüger and J. Pollmann
      Chemical Trends in Adsorption on Semiconductor Surfaces: Results from Local Density Theory
      Proceedings of the 16th Int. Seminar on Surface Physics, Kudowa, Poland 1992; Progress in Surface Science, 42, 351 (1993)
    • P. Krüger and J. Pollmann
      Ab-Initio Calculations of Si, As, S, Se and Cl Adsorption on Si(001) Surfaces
      Phys. Rev. B 47, 1898 (1993)
    • J. Pollmann, P. Krüger and A. Mazur
      Electronic, Structural and Vibronic Properties of Chalcogen Monolayers on (001) Surfaces of Elemental Semiconductors
      Proceedings of the 3rd Int. Conf. on the Formation of Semiconductor Interfaces, Rom 1991, Appl. Surf. Science 56- 58, 193 (1992)
    • P. Krüger and J. Pollmann
      Selfconsistent Electronic Structure of Clean and Adsorbate-Covered Ge(001) Surfaces
      Proceedings of the Vth Symposium on Surface Physics, Chlum Castle, Czechoslowakia, 1990, Progress in Surface Science 35, 3 (1991)
    • P. Krüger and J. Pollmann
      Self-Consistent Surface Electronic Structure for Semi-infinite Semiconductors from Scattering Theory
      Physica B: Condensed Matter 172, 155 (1991)
    • J. Pollmann and P. Krüger
      Total Energy and Electronic Structure of S: Ge(001) and Se: Ge(001)
      Proceedings of the 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, World Scientific (1990) p. 91
    • E. Landemark, R.I.G. Uhrberg, P. Krüger and J. Pollmann
      Surface Electronic Structure of Ge(001)-(2x1) : Experiment and Theory
      Surf. Sci. Lett. 236, L359 (1990)
    • P. Krüger and J. Pollmann
      First-Principles Theory of Sulfur Adsorption on Semi- Infinite Ge(001)
      Phys. Rev. Lett. 64, 1808 (1990)
    • P. Krüger and J. Pollmann
      Adsorption of Sulfur on Ge(001): First-principles Calculation of Structural and Electronic Properties
      Proceedings of the 7th Int. Conf. on Solid Surfaces (ICSS-7), Köln 1989, Vacuum 41, 638 (1990)
    • P. Krüger and J. Pollmann
      Scattering-Theoretical Method for Semiconductor Surfaces: Self-consistent Formulation and Application to Si(001)-(2x1)
      Phys. Rev. B 38, 10578 (1988)
    • J. Pollmann, P. Krüger and A. Mazur
      Self-Consistent Electronic Structure of Semiinfinite Si(001)-(2x1) and Ge(001)-(2x1) with Model Calculations for Scanning Tunneling Microscopy
      J. Vac. Sci. Technol. B5, 945 (1987)
    • J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
      Selfconsistent Electronic Structure of Semiinfinite Ge(001)-(2x1)
      Proceedings of the 18. Int. Conf. on the Physics of Semiconductors, Stockholm, edited by Olaf Engström (World Scientific, Singapore, 1986) p. 81
    • P. Krüger. A. Mazur, J. Pollmann and G. Wolfgarten
      First-Principles Electronic Structure Theory for Semiinfinite Semiconductors with Applications to Ge(001)-(2x1) and Si(001)-(2x1)
      Phys. Rev. Lett. 57, 1468 (1986)
    • J. Pollmann. R. Kalla, P. Krüger, A. Mazur and G. Wolfgarten
      Atomic, Electronic, and Vibronic Structure of Semiconductor Surfaces
      Appl. Physics A 41, 21 (1986)
    • G. Wolfgarten, P. Krüger and J. Pollmann
      Self-Consistent Scattering Theoretical Method for Surfaces: Application to Si(100)
      Sol. State Commun. 54, 839 (1985)
    • P. Krüger, G. Wolfgarten and J. Pollmann
      Nonlocal Density Functional Theory of Solids: Applications of the Weighted Density Approximation to Silicon
      Sol. State Commun. 53, 885 (1985)
    • J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
      Electronic Properties of Semiconductor Surfaces and Interfaces: Selected Results from Green's Function Studies
      Proceedings of ECOSS6, York, April 1984
      Surf. Sci. 152/153, 977 (1985)
    • P. Krüger and J. Pollmann
      Green's Function Studies of Ge Adsorption on GaAs(110)
      Phys. Rev. B 30, 3406 (1984)
    • P. Krüger and J. Pollmann
      Ge-GaAs Heterostructures: From Chemisorption to Heterojunction Interface Formation
      J. Vac. Sci. Technol. B2, 415 (1984)
    • J. Beyer, P. Krüger, A. Mazur, J. Pollmann and M. Schmeits
      Electronic Structure Studies of Hydrogen Adsorption and of Vacancies at the Relaxed GaAs(110) Surface
      J. Vac. Sci. Technol. 21, 358 (1982)

Projekte

  • abgeschlossene Projekte (als beteiligte Person)

    • Metallisierung von SiC Oberflächen durch Wasserstoff-Adsorption
      DFG, Förderung 2005-2010

    • Angeregte Zustände von adsorbierten Molekülen auf Halbleiter- und Isolatoroberflächen
      DFG, Förderung 2000-2010

    • Ab-initio Berechnung des elektronischen Spektrums von Halbleiterlegierungen mit großer Bandlücke
      DFG, Förderung 1999-2003

    • Strukturelle und elektronische Eigenschaften reiner und adsorbatbedeckter Oberflächen von kubischem und hexagonalem Siliziumkarbid
      DFG, Förderung 1997-2002
    • Theoretische Studien Elektronischer und Struktureller Eigenschaften von Gruppe III-Nitriden sowie ihrer Oberflächen und Grenzfläche
      DFG, Förderung 1997-2001