2014 - 2000
- J. Pollmann, X. Peng, J. Wieferink, and P. Krüger
Adsorption of hydrogen and hydrocarbon molecules on SiC(001)
Surface Science Reports 69, 55 (2014) - F. Huerkamp, P. Krüger, and J. Pollmann
Investigation of electron transmission through Co/C/Co magnetic tunnel junctions
Phys. Rev. B 89, 125302 (2014) - C. Sommer, P. Krüger, and J. Pollmann
Optical spectra of alkali-metal fluorides
Phys. Rev. B 86, 155212 (2012) - C. Sommer, P. Krüger, and J. Pollmann
Quasiparticle band structure of alkali-metal fluorides, oxides, and nitrides
Phys. Rev. B 85, 165119 (2012) - C. Wieferink, P. Krüger, and J. Pollmann
Influence of tip structure on tip-sample interaction forces at the KBr(001) surface: Results from ab initio investigations
Phys. Rev. B 84, 195402 (2011) - B. Stärk, P. Krüger, and J. Pollmann
Magnetic anisotropy of thin Co and Ni films on diamond surfaces
Phys. Rev. B. 84, 195316 (2011) - C. Wieferink, P. Krüger, and J. Pollmann
Simulations of friction force microscopy on the KBr(001) surface based on ab initio calculated tip-sample forces
Phys. Rev. B 83, 235328 (2011) - J. Wieferink, P. Krüger, and J. Pollmann
Ab-initio study of atomic hydrogen diffusion on the clean and hydrogen-terminated Si(001) surface
Phys. Rev. B 82, 075323 (2010) - B. Stärk, P. Krüger, and J. Pollmann
Magnetic Properties of Co and Ni Multilayers on Diamond Surfaces
Proceedings of NIC Symposium, 24-25 February 2010, FZ-Jülich, p. 207 (2010) - B. Stärk, P. Krüger, and J. Pollmann
Cobalt multilayers on diamond surfaces: An ab-initio study
Phys. Rev. B 81, 035321 (2010) - B. Baumeier, P. Krüger, and J. Pollmann
First-principles investigation of the atomic and electronic structure of the 4H-SiC(1102)-c(2x2) surface
Phys. Rev. B 78, 145318 (2008) - J. Wieferink, P. Krüger, and J. Pollmann
First-principles study of benzene adsorption on the SiC(001)-(3x2) surface
Phys. Rev. B 78, 165315 (2008) - B. Baumeier, P. Krüger, J. Pollmann, and G. Vajenine
Electronic structure of alkali-metal fluorides, oxides and nitrides: Density-functional calculations including self-interaction corrections
Phys. Rev. B 78, 125111 (2008) - P. Krüger, B. Baumeier, and J. Pollmann
First-Principles Investigation of an Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface
Phys. Rev. B 77, 085329 (2008) - X. Peng, P. Krüger, and J. Pollmann
Adsorption processes of hydrogen molecules on SiC(001), Si(001), and C(001) surfaces
New Journal of Physics 10, 125028 (2008) - M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
Desorption force on hydrogen atoms from resonant excitations of the H:Si(001)-(2x1) surface
Surf. Sci. 602, 3208 (2008) - B. Baumeier, P. Krüger, and J. Pollmann
Bulk and surface electronic structure of alkaline-earth metal oxides: Bound surface and image-potential states from first principles
Phys. Rev. B 76, 205404 (2007) - X. Peng, P. Krüger, and J. Pollmann
Hydrogenated SiC(001)-(3x2) surface: Semiconducting and metallic structures
Phys. Rev. B 76, 125303 (2007) - B. Baumeier, P. Krüger, and J. Pollmann
Structural, elastic, and electronic properties of SiC, BN, and BeO nanotubes
Phys. Rev. B 76, 085407 (2007) - J. Wieferink, P. Krüger, and J. Pollmann
First-principles study of acetylene adsorption on b-SiC(001)-(3x2)
Phys. Rev. B 75, 153305 (2007) - X. Peng, P. Krüger, and J. Pollmann
Why thermal H2 molecules adsorb on SiC(001)-c(4-2) and not on SiC(001)-(3x2) at room temperature
Phys. Rev. B 75, 073409 (2007) - J. Pollmann
There is plenty of room for new structures at the bottom
Surf. Sci. 601, 883-884 (2007) - B. Baumeier, P. Krüger, and J. Pollmann
Atomic and electronic structure of BeO and the BeO(1010) surface: An ab initio investigation
Phys. Rev. B 75, 045323 (2007) - J. Wieferink, P. Krüger, and J. Pollmann
Improved hybrid algorithm with Gaussian basis sets and plane waves: First-principles calculations of ethylene adsorption on β-SiC(001)-(3x2)
Phys. Rev. B 74, 205311 (2006) - N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
Electronic excitations of the H:Si(001)-(2x1) monohydride surface
Phys. Rev. B 74, 155405 (2006) - X. Peng, J. Wieferink, P. Krüger, and J. Pollmann
Structural and Electronic Properties of Clean and Adsorbate-Covered (001) Surfaces of Cubic SiC
Materials Science Forum, Vol. 338-342, pp. 369-374 - X. Peng, P. Krüger and J. Pollmann
Hydrogen-induced metallization of the 3C-SiC(001)-(3x2) surface
Surf. Sci. 600, 3564 (2006) - J. Wieferink, P. Krüger, and J. Pollmann
First-principles study of acetylene and ethylene adsorption on β-SiC(001)-(2x1)
Phys. Rev. B 73, 115309 (2006) - B. Baumeier, P. Krüger, and J. Pollmann
Self-interaction-corrected pseudopotentials for silicon carbide
Phys. Rev. B 73, 195205 (2006) - P. Krüger, and J. Pollmann
Generalized reconstruction model of SiC(001)-(nx2) surfaces and Si ad-dimer nanostrings
Phys. Rev. B 73, 035327 (2006) - M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
Dynamics of excited electronic states at clean and adsorbate-covered insulator surface
Surf. Sci. 593, Issues 1-3, p. 19-25 (2005) - X. Peng, P. Krüger, and J. Pollmann
Metallization of the 3C-SiC(001)-(3x2) surface induced by hydrogen adsorption: A first-principles investigation
Phys. Rev. B 72, 245320 (2005) - N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
Femtosecond dynamics of excited states of CO adsorbed on MgO(001)-(1x1)
Phys. Rev. B 71, 045407 (2005) - A. Mazur, and J. Pollmann
Surface phonons of D:C(001)-(2x1)
J. Phys. Chem. 108, 14570 (2004) - J. Pollmann, and P. Krüger
Reconstruction models of cubic SiC surfaces
J. Phys.: Condens. Matter 16, S1659 - S1703 (2004) - N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
Fast Initial Decay of Molecular Excitations at Insulator Surfaces
Phys. Rev. Lett. 92, 216805 (2004) - U. Freking, P. Krüger, A. Mazur, and J. Pollmann
Surface phonons of Si(001)-(1x1) dihydride
Phys. Rev. B 69, 035315 (2004) - J. Pollmann and P. Krüger
Green Functions in the Theory of Semiconductor Surfaces
Prog. Surf. Sci. 74, 269 (2003) - M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
Image States and Excitons at Insulator Surfaces with Negative Electron Affinity
Phys. Rev. Lett. 91, 256802 (2003) - N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
Electronic excitations of CO adsorbed on MgO(001)
Appl. Phys. A 78, 213 (2003) - S. Thachepan, H. Okuyama, T. Aruga, M. Nishijima, T. Ando, A. Mazur, and J. Pollmann
Surface phonons of C(001)(2x1)-H
Phys. Rev. B 68, 041401(R) (2003) - F. Sökeland, M. Rohlfing, P. Krüger, and J. Pollmann
Density functional and quasiparticle band-structure calculations for GaxAl1-xN and GaxIn1-xN alloys
Phys. Rev. B 68, 075203 (2003) - N.-P. Wang, M. Rohlfing, P. Krüger and J. Pollmann
Quasiparticle band structure and optical spectrum of LiF(001)
Phys. Rev. B 67, 115111 (2003) - Fu-He Wang, P. Krüger and J. Pollmann
First principles investigation of the C-terminated β-SiC(001)-c(2x2) surface
Phys. Rev. B 66, 195335 (2002) - M. Rohlfing and J. Pollmann
Localization of Optically Excited States by Self-Trapping
Phys. Rev. Lett. 88, 176801 (2002) - J. Pollmann, P. Krüger, A. Mazur and M. Rohlfing
Electrons, Phonons and Excitons at Semiconductor Surfaces
Adv. in Solid State Physics 42, pp. 189-206 (2002) - Fu-He Wang, P. Krüger, and J. Pollmann
Surface electronic structure of GaN(0001)-(1x1): Comparison between theory and experiment
Surf. Sci. 499, Issues 2-3, p. 193-202 (2002) - U. Freking, A. Mazur and J. Pollmann
Structural and vibronic properties of the dihydride-terminated Si(001) surface
in High Performance Computing in Science and Engineering 2001, ed. by E. Krause and W. Jäger, Springer Verlag, Berlin (2002), pp. 202-209 - C. Kreis, S. Werth, R. Adelung, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
Surface resonances at transition metal dichalcogenide heterostructures
Phys. Rev. B 65, 153314 (2002) - U. Freking, A. Mazur and J. Pollmann
Surface phonons of S:Si(001)-(1x1)
Phys. Rev. B 64, 245341 (2001) - Fu-He Wang, P. Krüger, and J. Pollmann
Electronic structure of 1x1 GaN(0001) and GaN(0001) surfaces
Phys. Rev. B 64, 035305 (2001) - K. Rossnagel, O. Seifarth, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
Fermi surface of 2H-NbSe2 and its implications on the charge-density-wave mechanism
Phys. Rev. B 64, 235119 (2001) - K. Rossnagel, L. Kipp, M. Skibowski, C. Solterbeck, T. Strasser, W. Schattke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
Three-dimensional Fermi surface determination by ARPES
Phys. Rev. B 63, 125104 (2001) - U. Freking, A. Mazur and J. Pollmann
Electronic, structural and vibrational properties of chalcogenides on Si(001) and Ge(001) surfaces
HPC in Science and Engineering 2000, ed. by E. Krause and W. Jäger, Springer Verlag, Berlin (2001), pp. 128-142 - M. Rohlfing and J. Pollmann
Dielectric function and reflectivity spectrum of SiC polytypes
Phys. Rev. B 63, 125201 (2001) - Th. Böker, R. Severin, A. Müller, C. Janowitz, R. Manzke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
Band structures of MoS2, MoSe2 and MoTe2: Angular-resolved photoelectron spectroscopy in the constant-final-state mode and ab-initio calculations
Phys. Rev. B 64, 235305 (2001) - R. Kucharczyk, U. Freking, P. Krüger and J. Pollmann
Electronic properties of AlGaAs-based biperiodic superlattices via pseudopotential calculations
Surf. Sci. 482-485, 612 (2001) - U. Freking, A. Mazur and J. Pollmann
Vibronic studies of adsorbate-covered semiconductor surfaces with the help of high performance computing
in High Performance Computing in Science and Engineering '99, ed. by E. Krause and W. Jäger, Springer Verlag, Berlin (2000), pp. 149-162 - J. Pollmann and P. Krüger
Electronic Structure of Semiconductor Surfaces
Handbook of Surface Science, Vol. 2, Chapter 2, pp. 96-208 (2000) - W. Lu, P. Krüger, and J. Pollmann
Atomic and electronic structure of silicate adlayers on polar hexagonal SiC surfaces
Phys. Rev. B 61, 13737 (2000) - C. Stampfl, Ch. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann
Native defects and impurities in InN: First-principles studies using the local-density approximation and self- interaction and relaxation-corrected pseudopotentials
Phys. Rev. B 61, R7846 (2000) - W. Lu, P. Krüger, and J. Pollmann
Ab-initio studies of the β-SiC(001)-(5x2) surface
Phys. Rev. B 61, 2680 (2000) - M. Rohlfing and J. Pollmann
Calculation of the U Parameter of the Mott-Hubbard Insulator 6H-SiC(0001)-(√3x√3)
Phys. Rev. Lett. 84, 135 (2000) - J. Pollmann, P. Krüger and W. Lu
Theory of Structural and Electronic Properties of Cubic SiC Surfaces
Materials Science Forum 338-342, 369 (2000) - W. Lu, P. Krüger and J. Pollmann
Ab initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√3 x √3)-R30° Reconstruction
Materials Science Forum 338-342, 349 (2000)
- J. Pollmann, X. Peng, J. Wieferink, and P. Krüger
1999 - 1990
- D. Voß, P. Krüger, A. Mazur, and J. Pollmann
Atomic and electronic structure of WSe2 from ab-initio theory: Bulk crystal and thin film systems
Phys. Rev. B 60, 14311 (1999) - W. Lu, P. Krüger, and J. Pollmann
Atomic and electronic structure of β-SiC(001)-(3x2)
Phys. Rev. B 60, 2495 (1999) - J. Neuhausen, V. K. Evstaf'iev, Th. Block, E. W. Finckh, W. Tremel, L. Augustin, H. Fuchs, D. Voß, P. Krüger, A. Mazur, and J. Pollmann
Scanning probe microscopy study of the metal-rich layered chalcogenides TaM2Te2 (M = Co, Ni)
Chem. Mater. 10 (12), pp. 38703878 (1998) - W. Lu, P. Krüger, and J. Pollmann
Missing-row asymmetric-dimer reconstruction of SiC(001)- c(4x2)
Phys. Rev. Lett. 81, 2292 (1998) - D. Vogel, P. Krüger, and J. Pollmann
Ab-initio electronic structure calculations of silver halides with SIRC pseudopotentials
Phys. Rev. B 58, 3865 (1998) - V. Gräschus, A. Mazur, P. Krüger and J. Pollmann
Surface phonons of As:Si(111)-(1x1) and As:Si(001)- (2x1)
Phys. Rev. B 57, 13175 (1998) - A. Glebov, J. P. Toennies, S. Vollmer, S. A. Safron, J. G. Skofronik, V. Gräschus, A. Mazur, and J. Pollmann
Phonon dynamics of the deuterated C(111)-(1x1) surface: Experiment and theory
Phys. Rev. B 57, 10082 (1998) - M. Rohlfing, P. Krüger, and J. Pollmann
Role of semicored electrons in quasiparticle band- structure calculations
Phys. Rev. B 57, 6485 (1998) - D. Vogel, P. Krüger, and J. Pollmann
Ab-initio calculations of CdS, CdSe and CdTe surfaces
Surf. Sci. 402-404, 774 (1998) - G. Hirsch, P. Krüger, and J. Pollmann
Surface passivation of GaAs(001) by sulfur: ab-initio studies
Surf. Sci. 402-404, 778 (1998) - K. Würde, P. Krüger, A. Mazur, and J. Pollmann
First-principles investigations of the atomic and electronic structure of Pb, Sn and Ge adsorbed on the Ge(111)-(√3 x √5) surface
Surface Review and Letters 5, 105 (1998) - M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
Structure of 6H-SiC(0001) surfaces from ab-initio calculations
Surface Review and Letters 5, 199 (1998) - M. Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle calculations of semicore states in Si, Ge, and CdS
Phys. Rev. B 56, R7065 (1997) - M. Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle calculations of surface core-level shifts
Phys. Rev. B 56, 2191 (1997) - J. Pollmann, P. Krüger, and M. Sabisch
Atomic and electronic structure of SiC surfaces from ab-initio calculations
phys. stat. sol. (b) 202, 421 (1997) - A. Mazur, B. Sandfort, V. Gräschus, and J. Pollmann
Phonons at Hydrogen-Terminated Si and Diamond Surfaces
Festkörperprobleme/Advances in Solid State Physics, Vol. 36, Vieweg, 1997, p. 181 - V. Gräschus, A. Mazur, and J. Pollmann
Surface phonons of H:Si(110)-(1x1)
Phys. Rev. B 56, 6482 (1997) - D. Vogel, P. Krüger, and J. Pollmann
Structural and electronic properties of group III- nitrides
Phys. Rev. B 55, 12836 (1997) - M. Sabisch, P. Krüger, and J. Pollmann
Ab-initio calculations of structural and electronic properties of 6H-SiC(0001) surfaces
Phys. Rev. B 55, 10561 (1997) - D. Vogel, P. Krüger, and J. Pollmann
New pseudopotentials for II-VI semiconductors
Proceedings of the 23rd Int. Conf. The Physics of Semiconductors, World Scientific, 1996, p. 617 - M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
Electronic structure of 6H-SiC(0001) surfaces
Proceedings of the 23rd Int. Conference The Physics of Semiconductors, Word Scientific, 1996, p. 819 - M. Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle calculations for bulk semiconductors and their surfaces
Proceedings of the 23rd Int. Conference The Physics of Semiconductors, World Scientific, 1996, p. 297 - P. Krüger and J. Pollmann
Initial states of carbon adsorption at the H:C(001) surface
Proceedings of the 23rd Int. Conference The Physics of Semiconductors, World Scientific, 1996, p. 947 - V. Gräschus, A. Mazur, and J. Pollmann
Surface phonons of H:Si(001)-(2x1) monohydride
Proceeding of the 23rd Int. Conference The Physics of Semiconductors, World Scientific, 1996, p. 931 - J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch, and D. Vogel
Ab-initio calculations of structural and electronic properties of prototype surfaces of group IV, III-V and II-VI semiconductors
Appl. Surf. Science 104/105, 1 (1996) - V. Gräschus, A. Mazur, and J. Pollmann
Surface phonons of D:Si(111)-(1x1)
Surf. Sci. 368, 179 (1996) - Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle band structures of clean, hydrogen- and sulfur-terminated Ge(001) surfaces
Phys. Rev. B 54, 13759 (1996) - B. Sandfort, A. Mazur, and J. Pollmann
Surface phonons of hydrogen-terminated semiconductor surfaces: III. Diamond (001) monohydride and dihydride
Phys. Rev. B 54, 8605 (1996) - D. Vogel, P. Krüger, and J. Pollmann
Self-interaction and relaxation-corrected pseudopotentials for II-VI semiconductors
Phys. Rev. B 54, 5495 (1996) - M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing, and J. Pollmann
First-principles calculations of β-SiC(001) surfaces
Phys. Rev. B 53, 13121 (1996) - M. Rohlfing, P. Krüger and J. Pollmann
Quasiparticle Band Structure of CdS
Phys. Rev. Lett. 75, 3489 (1995) - M. Rohlfing, P. Krüger and J. Pollmann
Metallic nature of the symmetric dimer model of Si(001)-(2x1)
Phys. Rev. B 52, 13753 (1995) - D. Vogel, P. Krüger and J. Pollmann
Ab initio electronic-structure calculations for II-VI semiconductors using self-interaction-corrected pseudopotentials
Phys. Rev. B 52, R 14316 (1995) - M. Rohlfing, P. Krüger and J. Pollmann
Efficient scheme for GW quasiparticle bandstructure calculations with applications to bulk Si and to the Si(001)-(2x1) surface
Phys. Rev. B 52, 1905 (1995) - M. Sabisch, P. Krüger and J. Pollmann
Ab initio calculations of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity
Phys. Rev. B 51, 13367 (1995) - J. Che, A. Mazur and J. Pollmann
Structural and elctronic properties during the initial stages of Ge-GaAs(110) interface formation
Phys. Rev. B 51, 14470 (1995) - P. Krüger and J. Pollmann
Dimer Reconstruction of Diamond, Si and Ge(001) surfaces
Phys. Rev. Lett. 74, 1155 (1995) - B. Sandfort, A. Mazur and J. Pollmann
Vibrational correlation functions of hydrogen- terminated C(111)-(1x1) and Si(111)-(1x1) surfaces.
Phys. Rev. B 51, 7168 (1995) - B. Sandfort, A. Mazur and J. Pollmann
Surface phonons of hydrogen-terminated semiconductors surfaces: The H:C(111)-(1x1) surface
Phys. Rev. B 51, 7150 (1995) - B. Sandfort, A. Mazur and J. Pollmann
Surface phonons of hydrogen-terminated semiconductors surfaces: The H:Si(111)-(1x1) surface
Phys. Rev. B 51, 7139 (1995) - P. Krüger and J. Pollmann
Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001)
Appl. Phys. A 59, 487 (1994) - P. Schröer, P. Krüger, and J. Pollmann
Self-consistent electronic-structure calculations of the (1010) surfaces of the wurtzite compounds ZnO and CdS
Phys. Rev. B 49, 17092 (1994) - P. Krüger and J. Pollmann
Bond Length of Ge Dimers at Si(001)
Phys. Rev. Lett. 72, 1130 C (1994) - B. Sandfort, A. Mazur, and J. Pollmann
Surface Phonons of H:Si(111)-(1x1)
Proceedings of ICFSI-4, World Scientific, Singapore, 1994, p. 158 - P. Schröer, P. Krüger, and J. Pollmann
First-Principles Atomic and Electronic Structure Calculations of the ZnO(1010) Surface
Proceedings of ICFSI-4, World Scientific, Singapore, 1994, p. 85 - P. Krüger and J. Pollmann
Dimer Formation and Electronic Properties of ordered Adlayers at Si(001): Results From Local Density Theory
Proceedings of the 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI-4), ed. by B. Lengeler, H. Lüth, W. Mönch and J. Pollmann, (World Scientific, Singapore, 1994) p. 108 - K. Würde, A. Mazur and J. Pollmann
Surface electronic structure of Pb(001), Pb(110), and Pb(111)
Phys. Rev. B 49, 7679 (1994) - W. Aulbur, J. Mählmann, M. Tondera and J. Pollmann
Variational pair theory of the attractive and extended Hubbard model in d-dimensions
Z. Phys. B 93, 219 (1994) - P. Schröer, P. Krüger, and J. Pollmann
Ab initio calculations of the electronic structure of the wurtzite compounds CdS and CdSe
Phys. Rev. B 48, 18264 (1993) - M. Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle band-structure calculations for C, Si, Ge, GaAs and SiC using Gaussian-orbital basis sets
Phys. Rev. B 48, 17791 (1993) - K. Würde, A. Mazur and J. Pollmann
Electronic Structure of Aluminium Surfaces. Results from Empirical Tight-Binding Scattering Theory
phys. stat. sol. (b) 179 (2), 399 (1993) - P. Schröer, P. Krüger and J. Pollmann
First-principles Electronic Structure of the Wurtzite Semiconductors ZnO and ZnS
Phys. Rev. B 47, 6971 (1993) - P. Krüger and J. Pollmann
Chemical Trends in Adsorption on Semiconductor Surfaces: Results from Local Density Theory
Progress in Surface Science 42, 351-363 (1993) - P. Krüger and J. Pollmann
Ab-Initio Calculations of Si, As, S, Se and Cl Adsorption on Si(001) Surfaces
Phys. Rev. B 47, 1898 (1993) - J. Pollmann, P. Krüger and A. Mazur
Electronic, Structural and Vibronic Properties of Chalcogen Monolayers on (001) Surfaces of Elemental Semiconductors
Appl. Surf. Science 56- 58, 193-198 (1992) - P. Krüger and J. Pollmann
Selfconsistent Electronic Structure of Clean and Adsorbate-Covered Ge(001) Surfaces
Progress in Surface Science 35, pp. 3-18 (1991) - P. Krüger and J. Pollmann
Self-Consistent Surface Electronic Structure for Semi-infinite Semiconductors from Scattering Theory
Physica B: Condensed Matter 172, 155 (1991) - J. Pollmann and P. Krüger
Total Energy and Electronic Structure of S: Ge(001) and Se: Ge(001)
Proceedings of the 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, World Scientific (1990) p. 91 - E. Landemark, R.I.G. Uhrberg, P. Krüger and J. Pollmann
Surface Electronic Structure of Ge(001)-(2x1) : Experiment and Theory
Surf. Sci. Lett. 236, L359 (1990) - P. Krüger and J. Pollmann
First-Principles Theory of Sulfur Adsorption on Semi- Infinite Ge(001)
Phys. Rev. Lett. 64, 1808 (1990) - J. Pollmann
Elektronische Struktur von Halbleiteroberflächen und Halbleitergrenzflächen
21. IFF-Ferienkurs über "Festkörperforschung für die Informationstechnik", KFA-Jülich, 1990, p. 8.1-8.42 - A. Mazur and J. Pollmann
Anisotropy of the Mean-Square-Displacements at the Si(001)-(2x1) Surface
Surf. Sci. 225, 72 (1990) - A. Mazur and J. Pollmann
Mean-Square-Displacements at the Reconstructed Si(001)-(2x1) Surface
Vacuum 41, 600-601 (1990) - P. Krüger and J. Pollmann
Adsorption of Sulfur on Ge(001): First-principles Calculation of Structural and Electronic Properties
Vacuum 41, 638-639 (1990)
- D. Voß, P. Krüger, A. Mazur, and J. Pollmann
1989 - 1972
- A. Mazur and J. Pollmann
Lattice Dynamics and Mean-Square-Displacements of the Reconstructed Si(001)-(2x1) Surface
Proceedings of the 3rd Int. Conf. on Phonon Physics ("Phonons 89"), Heidelberg, World Scientific, Singapore (1989) p. 943 - A. Mazur and J. Pollmann
Lattice dynamics of Si calculated with a semiempirical approach
Phys. Rev. B 39, 5261 (1989) - P. Krüger and J. Pollmann
Scattering-Theoretical Method for Semiconductor Surfaces: Self-consistent Formulation and Application to Si(001)-(2x1)
Phys. Rev. B 38, 10578 (1988) - R. Kalla and J. Pollmann
Bond-Angle Relaxation and Electronic Structure of Si and Ge Overlayers on (110) Surfaces of III-V Semiconductors
Surf. Sci. 200, 80 (1988) - B. Gerlach, D. Richter and J. Pollmann
Excitons in a Homogeneous Magnetic Field: A Modified Perturbation Approach
Z. Phys. B. 66, 419 (1987) - I. Hernandez-Calderon, H. Höchst, A. Mazur and J. Pollmann
Angle-Resolved Ultraviolet Photoemission Spectroscopy Study of the Electronic Structure of In Sb (111) Surfaces along the [110] Azimuth
J. Vac. Sci. Technol. A5(4), 2042 (1987) - J. Pollmann, P. Krüger and A. Mazur
Self-Consistent Electronic Structure of Semiinfinite Si(001)-(2x1) and Ge(001)-(2x1) with Model Calculations for Scanning Tunneling Microscopy
J. Vac. Sci. Technol. B5, 945 (1987) - M. Schreiber, M. Fieseler, A. Mazur, J. Pollmann, B. Stock and R.G. Ulbrich
Dispersive Phonon Focusing in Gallium Arsenide
Proceedings of the 18. Int. Conf. on the Physics of Semiconductors, Stockholm, edited by Olaf Engström (World Scientific, Singapore, 1986) P. 1373 - J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
Selfconsistent Electronic Structure of Semiinfinite Ge(001)-(2x1)
Proceedings of the 18. Int. Conf. on the Physics of Semiconductors, Stockholm, edited by Olaf Engström (World Scientific, Singapore, 1986) p. 81 - A. Mazur and J. Pollmann
Surface Vibrational Excitations on Si(001)-(2x1)
Phys. Rev. Lett. 57, 1811 C (1986) - P. Krüger. A. Mazur, J. Pollmann and G. Wolfgarten
First-Principles Electronic Structure Theory for Semi-Infinite Semiconductors with Applications to Ge(001)-(2x1) and Si(001)-(2x1)
Phys. Rev. Lett. 57, 1468 (1986) - J. Pollmann. R. Kalla, P. Krüger, A. Mazur and G. Wolfgarten
Atomic, Electronic, and Vibronic Structure of Semiconductor Surfaces
Appl. Physics A 41, 21 (1986) - A. Goldmann. P. Koke, W. Mönch, G. Wolfgarten and J. Pollmann
Angle-Resolved Photoemission from Si(100): Direct versus Indirect Transitions
Surface Science 169, 438 (1986) - M. Podgorny, G. Wolfgarten and J. Pollmann
Bandstructure of SixGe1-x Alloys: Selfconsistent Virtual Crystal Approximation
J. Phys. C: Solid State Phys. 19, L141 (1986) - G. Wolfgarten, P. Krüger and J. Pollmann
Self-Consistent Scattering Theoretical Method for Surfaces: Application to Si(100)
Sol. State Commun. 54, 839 (1985) - P. Krüger, G. Wolfgarten and J. Pollmann
Nonlocal Density Functional Theory of Solids: Applications of the Weighted Density Approximation to Silicon
Sol. State Commun. 53, 885 (1985) - P.K. Larsen and J. Pollmann
Interaction of Hydrogen with GaAs(001)-(2x4)
Sol. State Commun. 53, 277 (1985) - P. Koke, A. Goldmann, W. Mönch, G. Wolfgarten and J. Pollmann
Angle-Resolved Photoemission from Si(100): Identification of Bulk Band Transitions
Proceedings of ECOSS6, York, April 1984
Surf. Sci. 152/153, 1001 (1985) - J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
Electronic Properties of Semiconductor Surfaces and Interfaces: Selected Results from Green's Function Studies
Proceedings of ECOSS6, York, April 1984
Surf. Sci. 152/ 153, 977 (1985) - P. Krüger and J. Pollmann
Green's Function Studies of Ge Adsorption on GaAs(110)
Phys. Rev. B 30, 3406 (1984) - A. Mazur and J. Pollmann
Electronic Properties of (211) Surfaces of Group IV and III-V Semiconductors
Phys. Rev. B 30, 2084 (1984) - P. Krüger and J. Pollmann
Ge-GaAs Heterostructures: From Chemisorption to Heterojunction Interface Formation
J. Vac. Sci. Technol. B2, 415 (1984) - J. Pollmann
Electronic Properties of Interfaces
Proceedings of the 3rd EPS Conference of the Condensed Matter Division, Lausanne, Schweiz
Helvetia Physica Acta 56, 493 (1983) - M. Schmeits, A. Mazur and J. Pollmann
Scattering Theoretical Method for Relaxed and Reconstructed Surfaces with Applications to Si(100)-2x1 and GaAs(110)
Phys. Rev. B 27, 5012 (1983) - J. Pollmann and A. Mazur
Theory of Semiconductor Heterojunctions
Proceedings of the Symposium on Interfaces and Contacts, Boston, November 1982
Thin Solid Films 104, 257 (1983) - J. Pollmann
New Hexagonal Ring Model for the Reconstruction of the Si(111)-7x7 Surface
Phys. Rev. Lett. 49, 1649 (1982) - A. Mazur and J. Pollmann
New Evidence for Asymmetric Dimer Resonstruction on the Si(100)-(2x1) Surface
Phys. Rev. B 26, 7086 (1982) - H. Büttner and J. Pollmann
Excitons in Polar Semiconductors
Proceedings 16. Int. Conf. on the Physics of Semiconductors, Montpellier, France
Physica 117-118 (B+C), 278 (1982) - J. Pollmann, A. Mazur and M. Schmeits
On the Electronic Structure of the Si(100)-2x1 Surface
Proceedings 16. Int. Conf. on the Physics of Semiconductors, Montpellier, France
Physica 117-118 (B+C), 771 (1982) - W. Göpel, J. Pollmann, I. Ivanov and B. Reihl
Angle-Resolved Photoemission from Polar and Nonpolar ZnO Surfaces
Phys. Rev. B 26, 3144 (1982) - P.K. Larsen, J.F. van der Veen, A. Mazur, J. Pollmann, J.H. Neave and B.A. Joyce
Surface Electronic Structure of GaAs(001)-2x4: Angle- Resolved Photoemission and Tight Binding Calculations
Phys. Rev. B 26, 3222 (1982) - J. Beyer, P. Krüger, A. Mazur, J. Pollmann and M. Schmeits
Vacancies and hydrogen adsorption at GaAs(110): Theoretical model studies of the electronic structure
J. Vac. Sci. Technol. 21, 358 (1982) - A. Mazur, J. Pollmann and M. Schmeits
Angular-Resolved Initial State Spectra for the Relaxed GaAs(110) Surface
Sol. State Commun. 42, 37 (1982) - P.K. Larsen, J.F. van der Veen, A. Mazur, J. Pollmann and B.H. Verbeek
Photoemission from Valence Bands of GaAs(001) grown by Molecular Beam Epitaxy
Sol. State Commun. 40, 459 (1981) - I. Ivanov and J. Pollmann
Electronic Structure of Ideal and Relaxed Surfaces of ZnO: A Prototype Ionic Wurtzite Semiconductor and its Surface Properties
Phys. Rev. B 24, 7275 (1981) - I. Ivanov and J. Pollmann
Effects of Surface Relaxation on the Electronic Structure of ZnO
Proceedings of PCSI8 (Williamsburgh, 1981)
J. Vac. Sci. Technol. 19, 344 (1981) - M. Schmeits, A. Mazur and J. Pollmann
Electronic Structure of Ideal and Relaxed InSb(110) Surfaces
Sol. State Commun. 40, 1081 (1981) - A. Mazur, J. Pollmann and M. Schmeits
Overlayer Systems: Suitable Samples for Probing Heterojunction Interface Properties
Sol. State Commun. 36, 961 (1980) - J. Pollmann
Electronic Structure of a Vacancy at the Si (100) Surface
Inst. Phys. Conf. Ser. 59, p. 151 (1980) - A. Mazur, J. Pollmann and M. Schmeits
Electronic Structure of Segregated Ge-(110) GaAs Overlayer Systems
in Proceedings of the 15. Int. Conf. on the Physics of Semiconductors, Kyoto;
J. Phys. Soc. Japan 49, Suppl. A 1121 (1980) - I. Ivanov and J. Pollmann
First Surface Electronic Structure of a Wurtzite Semiconductor - The Polar and Nonpolar Surfaces of ZnO
Sol. State Commun. 36, 361 (1980) - A. Mazur, J. Pollmann and M. Schmeits
Interface Bands and Layer Densities of States of (110)Ge-GaAs Heterostructures
Proceedings of the Fourth Int. Conf. on Solid Surfaces, (Cannes, France), Vol. II, p. 975 (1980) - J. Pollmann
Vacancies at Si, Ge and GaAs (100) Surfaces
Proceedings of the Fourth Int. Conf. on Solid Surfaces, (Cannes, France), Vol. I, p. 7 (1980) - J. Pollmann
On the Electronic Structure of Semiconductor Surfaces, Interfaces and Defects at Surfaces or Interfaces
in Festkörperprobleme, (Adv. in Solid State Physics), Vol. XX, J. Treusch (ed.), Vieweg, Braunschweig (1980), p. 117 - J. Pollmann, A. Mazur and M. Schmeits
Electronic Properties of Relaxed Surfaces, Interfaces, Overlayer-Systems and Defects at Surfaces or Interfaces-Applications of the Scattering Theoretical Method
Surf. Science 99, 165 (1980) - J. Pollmann
Defects at Surfaces and Interfaces - A Scattering Theoretical Approach
Sol. State Commun. 34, 587 (1980) - I. Ivanov, A. Mazur and J. Pollmann
The Ideal (111), (110) and (100) Surfaces of Si, Ge and GaAs - A Comparison of their Electronic Structure
Surf. Sci. 92, 365 (1980) - J. Pollmann and S.T. Pantelides
Electronic Structure of the Ge-GaAs and Ge-ZnSe (100) Interfaces
Phys. Rev. B 21, 709 (1980) - I. Ivanov and J. Pollmann
Microscopic Approach to the Quantum Size Effect in Superlattices
Sol. State Commun. 32, 869 (1979) - J. Pollmann and S.T. Pantelides
Electronic Structure of Ge Overlayers on (100) GaAs
J. Vac. Sci. Technol. 16, 1498 (1979) - S.T. Pantelides and J. Pollmann
Critique of the Empirical Tight-Binding Method for Surfaces and Interfaces
J. Vac. Sci. Technol. 16, 1349 (1979) - J. Pollmann and S.T. Pantelides
New Method for the Electronic Structure of Heterojunctions---Application to the (100) Ge-GaAs Interface
Sol. State Commun. 30, 621 (1979) - J. Pollmann and S.T. Pantelides
Localization of Electronic States at Free Semiconductor Surfaces
Phys. Rev. B 20, 1740 (1979) - N.O. Lipari and J. Pollmann
Theory of Excitons in a Magnetic Field for Anisotropic and Polar Semiconductors
Inst. Phys. Conf. Ser. No 43, 1079 (1979) - J. Pollmann and S.T. Pantelides
Electronic Structure of Semiconductor Surfaces and Interfaces - A Novel Approach Based on Scattering Theory
Inst. Phys. Conf. Ser. No 43, 199 (1979) - J. Pollmann, N.O. Lipari and H. Büttner
Quenching of Exciton Diamagnetic Shifts in Polar, Layered Materials
Sol. State Commun. 28, 203 (1978) - S.T. Pantelides, J. Bernholc, J. Pollmann and N.O. Lipari
Green's Functions Scattering-Theoretic Methods for Point Defects, Surfaces and Interfaces
Int. Journ. Quant. Chem. 12, 507 (1978) - J. Pollmann and S.T. Pantelides
Scattering-Theoretic-Approach to the Electronic Structure of Semiconductor Surfaces: The (100) Surface of Tetrahedral Semiconductors and SiO2
Phys. Rev. B 18, 5524 (1978) - J. Pollmann and H. Büttner
Effective Hamiltonians and binding energies of Wannier excitons in polar semiconductors
Phys. Rev. B 16, 4480 (1977) - B. Gerlach and J. Pollmann
Wannier Excitons in Layered Semiconductors
Il Nuovo Cimento B 38, 423 (1977) - G. Behnke, H. Büttner and J. Pollmann
Ground-State Energy of the Exciton-Phonon System in a Magnetic Field
Sol. State Commun. 20, 873 (1976) - J. Pollmann
Exciton Ground-State in Strongly Anisotropic Crystals
Sol. State Commun. 19, 361 (1976) - J. Pollmann
Some Remarks on the Fine Structure of Excitonic Lines in CuCl
phys. stat. sol. (b) 71, K147 (1975) - J. Pollmann and H. Büttner
Upper Bounds for the Ground-State Energy of the Exciton-Phonon System
Sol. State Commun. 17, 1171 (1975) - B. Gerlach and J. Pollmann
Binding Energies and Wave Functions of Wannier Excitons in Uniaxial Crystals -- A Modified Perturbation Approach: II. Applications
phys. stat. sol. (b) 67, 477 (1975) - B. Gerlach and J. Pollmann
Binding Energies and Wave Functions of Wannier Excitons in Uniaxial Crystals - A Modified Perturbation Approach: I. Theory
phys. stat. sol. (b) 67, 93 (1975) - J. Pollmann
Improved Perturbation Treatment of Bound-State Problems with Special Applications to the Exciton
phys. stat. sol. (b) 63, 501 (1974) - J. Pollmann
Elastic Interaction of Point Defects with Tetragonal Symmetry in Anisotropic, Cubic Crystals
KFA-Jülich-Report; Jül-1023-FF (November 1973) - J. Pollmann and H. Büttner
Phonon Influence on the Biexciton Binding in CuCl and CuBr
Sol. State Commun. 12, 1105 (1973) - P.H. Dederichs and J. Pollmann
Elastic Displacement Field of Point Defects in Anisotropic, Cubic Crystals
Zeitschrift für Physik A: Hadrons und Nuclei 255, 315 (1972) - P.H. Dederichs and J. Pollmann
Elastisches Verschiebungsfeld und Wechselwirkungsenergie von Punktdefekten in anisotropen, kubischen Kristallen
KFA-Jülich-Report; Jül-836-FF (März 1972)
- A. Mazur and J. Pollmann