Diffusion and Defects in Elementary and Compound Semiconductors
Interference between self- and dopant diffusion in silicon isotope multilayer structures
This research topic concerns the simultaneous diffusion of self- and dopant atoms in silicon. Experiments on
boron, arsenic and phosphorus diffusion in silicon isotope multilayer structures have been performed at
temperatures between 850oC and 1100oC. Modelling of the simultaneous diffusion
yields valuable information about the underlying mechanisms of dopant- and self-diffusion. Our
experiments provide direct evidence that boron diffusion is mediated by neutral and singly positively charged
self-interstitials. Simultaneous modelling of boron and silicon profiles yields data for the contributions of
neutral and positively charged self-interstitials to self-diffusion. The simultaneous diffusion of arsenic and
silicon reveals that neutral and singly negatively charged native defects mediate arsenic diffusion; no evidence
of doubly charged defects was found. Detailed modeling of phosphorus diffusion in silicon isotope multilayer
structures was achieved on the basis of a P diffusion model which involves neutral and positively
charged mobile P species and neutral and singly negatively charged native defects.
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