Diffusion and Defects in Elementary and Compound Semiconductors
Iridium diffusion in silicon
Diffusion plays an important role in the fabrication of semiconductor-based electronic devices. Moreover,
diffusion studies provide basic knowledge about the lattice defects involved in atomic transport such as
vacancies and self-interstitials.
Diffusion of Ir into Si was investigated in the temperature range from
875 to 1050oC by means of neutron activation analysis and mechanical sectioning. Within
the framework of interstitial-substitutional diffusion, previously established for Ir in Si, the measured
penetration profiles were simulated by the simultaneous action of the kick-out and dissociative mechanism. This
enabled us not only to determine the thermodynamic and transport properties of Ir in Si but also to assess
Si vacancy concentrations in thermal equilibrium.
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