Westfälische
Wilhelms-Universität Münster
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Institut für Materialphysik Wilhelm-Klemm-Str. 10 48149 Münster Geschäftsführender Direktor: Prof. Dr. Helmut Mehrer |
Tel. (0251) 83-33571
Fax: (0251) 83-38346 e-mail: mehrer@nwz.uni-muenster.de www: http://www.uni-muenster.de/Physik/MP/ |
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Forschungsschwerpunkte 2001 - 2002 Fachbereich 11 - Physik
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Atomic mechanisms of mass transport in elemental and compound semiconductors
The controlled
incorporation of point defects in elemental and compound semiconductors is one of the main tasks in
the production of electronic devices. Homogeneous doping is generally achieved by adding a
controlled amount of the dopant element to the melt or to the gas phase of epitaxial layer deposition
systems. However, the fabrication of electronic devices like diodes, transistors, or complex integrated
circuits requires spatially inhomogeneous dopant distributions. Such distributions are formed by
deposition of the dopants on or implantation beneath the surface followed by a high temperature
diffusion step. In order to tune electronic devices to the desired functionality the diffusion induced
dopant distribution must be predictable and as accurate as possible. This requires a detailed
knowledge of the atomic mechanisms of dopant diffusion, the properties of native point defects such
as vacancies, self-interstitials, and antisite defects, and the interactions among the different point
defects. Results from self- and foreign-atom diffusion experiments in elemental and compound
semiconductors are summarised which were conducted in our research group. The experiments were
performed deliberately to characterise the atomic mechanisms of mass transport and to gain a better
understanding about the properties of native point defects in semiconductors. Moreover future
experiments are suggested which will help to understand dopant- and self-diffusion in more detail.
This information is highly desirable for predictive modelling of diffusion processes at high doping
levels both in elemental and compound semiconductors.
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