Fachbereich 11 - Physik
Institut für Materialphysik
Diffusion and Defects in Elementary and Compound Semiconductors

Data compilation on solubility and segregation of impurities in Ge and Si

For semiconductor science and technology reliable data related to equilibrium concentrations of impurities and native point defects are of paramount importance. We collected - in the framework of a Landolt-Börnstein data compilation series - foreign-atom solubilities, solid-liquid segregation coefficients as well as vacancy and self-interstitial equilibrium concentrations from the literature. Whenever possible, activation energies and pre-exponential factors characterising the temperature dependence of the compiled data were reported.

Beteiligte Wissenschaftler:

HDoz. Dr. H. Bracht, PD Dr. N.A. Stolwijk

Veröffentlichungen:

H. Bracht, N.A. Stolwijk: Solubility, segregation and distribution coefficients of impurities and defects in silicon, in: Landolt--Börnstein, New Series, Vol. III/41 Subvolume A2a, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds, Part a: Group IV Elements, ed. by M. Schulz, Springer, Berlin, 2002

N.A. Stolwijk, H. Bracht: Solubility and segregation of impurities and native point defects in germanium, in: Landolt--Börnstein, New Series, Vol. III/41 Subvolume A2a, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds, Part a: Group IV Elements, ed. by M. Schulz, Springer, Berlin, 2002