Publications

  • 2016 to 2017

    G Hamdana, T Südkamp, M Descoins, D Mangelinck, L Caccamo, M Bertke, HS Wasisto, H Bracht, E Peiner
    Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography
    Microelectronic Engineering 179 (2017) 74–82.

    M Radek, H Bracht, B Liedke, R Böttger, M Posselt
    Ion-beam induced atomic mixing in isotopically controlled silicon multilayers
    Journal of Applied Physics 120 (2016) 185701.

    T Südkamp, H Bracht
    Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to 755 °C
    Physical Review B 94 (2016) 125208.

    J Kujala, T Südkamp, J Slotte, I Makkonen, F Tuomisto, H Bracht
    Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb
    Journal of Physics: Condensed Matter 28 (2016) 335801.

    S Eon, R Frieling, A Plech, H Bracht
    Measurement and analysis of thermal conductivity of isotopically controlled silicon layers by time‐resolved X‐ray scattering
    Physica Status Solidi A 213 (2016) 3020-3028.

    R Frieling, S Eon, D Wolf, H Bracht
    Molecular dynamics simulations of thermal transport in isotopically modulated semiconductor nanostructures
    Physica Status Solidi A 213 (2016) 549-556.

    D Issenmann, S Eon, H Bracht, M Hettich, T Dekorsy, G Buth, R Steininger, T Baumbach, J L Hansen, A N  Larsen, J W Ager, E E Haller, A Plech
    Ultrafast study of phonon transport in isotopically controlled semiconductor nanostructures
    Physica Status Solidi A 213 (2016) 541-548.

  • 2011 to 2015

    H Bracht, T Südkamp, M Radek and A Chroneos
    Response to “Comment on ‘Diffusion of n-type dopants in germanium’ ” [Appl. Phys. Rev. 2, 036101 (2015)]
    Applied Physics Reviews 2 (2015) 036102.

    M Radek, H Bracht, BC Johnson, JC McCallum, M Posselt and B Liedke
    Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
    Applied Physics Letters 107 (2015) 082112.

    D Wortelen, R Frieling, H Bracht, W Graf, F Natrup
    Impact of zinc halide addition on the growth of zinc-rich layers generated by sherardizing
    Surface and Coatings Technology 263 (2015) 66-77.

    H Bracht
    Self-and Dopant Diffusion in Silicon, Germanium, and Their Alloys
    Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals; CRC Press (2014) 159-206.

    R Frieling, M Radek, S Eon, H Bracht, DE Wolf
    Phonon coherence in isotopic silicon superlattices
    Applied Physics Letters 105 (2014) 132104.

    R Kube, H Bracht, E Hüger, H Schmidt, J Lundsgaard Hansen, A Nylandsted Larsen, JW Ager III, EE Haller, T Geue, J Stahn, M Uematsu, KM Itoh
    Reply to “Comment on ‘Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions’”
    Physical Review B 90 (2014) 117202.

    M Radek, H Bracht, M Posselt, B Liedke, B Schmidt, D Bougeard
    Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures
    Journal of Applied Physics 115 (2014) 023506-1(5).

    H Bracht, R Kube, E Hüger, H Schmidt
    Properties of Point Defects in Silicon: New Results after a Long-Time Debate
    Solid State Phenomena 205-206 (2014) 151-156.

    A Chroneos, H Bracht
    Diffusion of n-type dopants in germanium
    Applied Physics Reviews 1 (2014) 011301-1(20).

    H Bracht, S Eon, R Frieling, A Plech, D Issenmann, D Wolf, JL Hansen, AN ...
    Thermal conductivity of isotopically controlled silicon nanostructures
    New Journal of Physics 16 (2014) 015021-1(18).

    H Bracht
    Defect engineering in germanium
    Phys. Status Solidi A 211 (2014) 109–117.

    S. Cosentino, S. Knebel, S. Mirabella, S. Gibilisco, F. Simone, H. Bracht, G. Wilde, A. Terrasi
    Light absorption in Ge nanoclusters embedded in SiO2: comparison between magnetron sputtering and sol–gel synthesis
    Appl. Phys. A, DOI: 10.1007/s00339-013-8101-9.

    H. Tahini, A Chroneos, H Bracht, ST Murphy, RW Grimes, U Schwingenschlögl
    Antisites and anisotropic diffusion in GaAs and GaSb
    Applied Physics Letters 103 (2013), 142107-1(4).

    RA Yankov, A Kolitsch, J von Borany, F Munnik, S Gemming, A Alexewicz, Hartmut Bracht, Harald Rösner, Alexander Donchev, Michael Schütze
    Microstructural Studies of Fluorine‐Implanted Titanium Aluminides for Enhanced Environmental Durability
    Advanced Engineering Materials 16 (2014) 52–59.

    R Kube, H Bracht, E Hüger, H Schmidt, JL Hansen, AN Larsen, JW Ager III, E.E. Haller, T Geue, J Stahn
    Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions
    Physical Review B 88 (2013), 085206-1(12).

    T. Südkamp, H. Bracht, G. Impellizzeri, J. Lundsgaard Hansen, A. Nylandsted Larsen, and E.E. Haller
    Doping dependence of self-diffusion in germanium and the charge states of vacancies
    Appl. Phys. Lett. 102 (2013) 242103-1(4).

    S. Schneider, H. Bracht, J.N. Klug, J. Lundsgaard Hansen, A. Nylandsted Larsen, D. Bougeard, and E.E. Haller
    Radiation enhanced self- and boron diffusion in germanium
    Physical Review B 87 (2013) 115202-1(10).

    H. Tahini, A. Chroneos, R. W. Grimes, U. Schwingenschlögl, H. Bracht
    Point defect engineering strategies to retard phosphorous diffusion in germanium
    Physical Chemistry Chemical Physics, 15 (2013) 367-371.

    D. Issenmann, S. Eon, N. Wehmeier, H. Bracht, D. Khakhulin, G. Buth, S. Ibrahimkutty, A. Plech
    Determination of nanoscale heat conductivity by time-resolved x-ray scattering
    Thin Solid Films 541 (2013) 28-31.

    H. Bracht and G. Impellizzerri
    Editorial to the Special Issue “New Aspects of Si- and Ge-based Materials and Devices”
    Materials Science in Semiconductor Processing 15 (2012) 587.

    E. Hüger, R. Kube, H. Bracht, J. Stahn, T. Geue, H. Schmidt
    A neutron reflectometry study on silicon self-diffuion at 900°C
    Physica Status Solidi B 249 (2012) 2108-2112.

    H. Bracht, N. Wehmeier, S. Eon, A. Plech, D. Issenmann, J. Lundsgaard Hansen, A. Nylandsted Larsen, E.E. Haller, J.W. Ager III 
    Reduced thermal conductivity of isotopically modulated silicon multilayer structures
    Applied Physics Letters 101 (2012) 064103-1(4).

    M. Grofmeier and H. Bracht
    Cation diffusion in mixed cation silicate glasses under non-equilibrium conditions
    Solid State Ionics 222-223 (2012) 47-52.

    H. Bracht, M. Radek, R. Kube, S. Knebel, M. Posselt, B. Schmidt, E.E. Haller, and D. Bougeard
    Ion-beam mixing in crystalline and amorphous germanium isotope multilayers
    Journal of Applied Physics 110 (2011) 093502-1(7).

    H. Tahini, A. Chroneos, R.W. Grimes, U. Schwingenschlögl, and H. Bracht
    Diffusion of E centers in germanium predicted using GGA+U approach
    Applied Physics Letters 99 (2011) 072112-1(3).

    G. Impellizzeri, S. Boninelli, F. Priolo, E. Napolitani, A. Chroneos, and H. Bracht
    Fluorine effect on As diffusion in Ge
    Journal of Applied Physics 109 (2011) 113527-1(6).

    S. Knebel, A. Kyriakidou, H. Bracht, H. Rösner, and G. Wilde 
    Structural and electronic properties of sol-gel derived Ge nanocrystals in SiO2 films
    Applied Physics A 103 (2011) 149-158.

    A. Chroneos, C.A. Londos, and H. Bracht
    A-centers and isovalent impurities in germanium: Density functional theory calculations
    Material Science and Engineering B 176 (2011) 453-457.

    H. Bracht, S. Schneider, and R. Kube
    Diffusion and doping issues in germanium
    Microelectronic Engineering 88 (2011) 452-457.

    S. Schneider and H. Bracht
    Suppression of donor-vacancy complexes in germanium by concurrent annealing and irradiation
    Applied Physics Letters 98 (2011) 014101-1(3).

  • 2006 to 2010

    K. Sunder, M. Grofmeier, R. Staskunaite, and H. Bracht
    Dynamic of network formers and modifiers in mixed cation glasses
    Zeitschrift für physikalische Chemie 224 (2010) 1677-1705.

    A. Schirmeisen, A. Taskiran, H. Bracht, and B. Roling
    Ion jump dynamics in nanoscopic subvolumes analyzed by electrostatic force spectroscopy
    Zeitschrift für Physikalische Chemie 224 (2010) 1831-1852.

    P. Tsouroutas, D. Tsoukalas, and H. Bracht
    Experiments and simulations on diffusion and activation of co-doped with arsenic and phosphorus germanium
    Journal of Applied Physics 107 (2010) 024903-1(8).

    R. Kube, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. E. Haller, S. Paul, and W. Lerch
    Composition dependence of Si and Ge diffusion in relaxed Si1-xGex alloys
    Journal of Applied Physics 107 (2010) 073520-1(6).

    A. Chroneos, R. Kube, H. Bracht, R.W. Grimes, and U. Schwingenschlögl
    Vacancy-indium clusters in implanted germanium
    Chemical Physics Letters 490 (2010) 38-40.

    A. Chroneos and H. Bracht
    Impact of oxygen on the diffusion of silicon in germanium: Density functional theory calculations
    Semiconductor Science and Technology 25 (2010) 045002-1(4).

    H. Bracht, S. Schneider, J.N. Klug, C.Y. Liao, J. Lundsgaard Hansen, E.E. Haller, A. Nylandsted Larsen, D. Bougeard, M. Posselt, and C. Wündisch
    Interstitial-mediated diffusion in germanium under proton irradiation
    Physical Review Letters 103 (2009) 255501-(4).

    R. Kube, H. Bracht, A. Chroneos, M. Posselt, and B. Schmidt
    Intrinsic and extrinsic diffusion of indium in germanium
    Journal of Applied Physics 106 (2009) 063534-1(7).

    A. Chroneos, C. Jiang, R.W. Grimes, U. Schwingenschlögl, and H. Bracht
    E centers in ternary Si1-x-yGexSny random alloys
    Applied Physics Letters 95 (2009) 112101-1(3).

    A. Chroneos, R.W. Grimes, and H. Bracht
    Fluorine codoping in germanium to suppress donor diffusion an deactivation
    Journal of Applied Physics 106 (2009) 063707-1(5).

    A. Chroneos, C. Jiang, R.W. Grimes, U. Schwingenschlögl, and H. Bracht
    Defect interactions in Sn1-xGex random alloys
    Applied Physics Letters 94 (2009) 252104-1(3).

    H. Bracht, S. Brotzmann, and A. Chroneos
    Impact of carbon on the diffusion of donor atoms in germanium
    Defect and Diffusion Forum 289-292 (2009) 689-696.

    K. Sunder and H. Bracht
    Oxygen and silicon diffusion in silica under varying ambient conditions
    Defect and Diffusion Forum 289-292 (2009) 531-539.

    M. Grofmeier, F.V. Natrup, and H. Bracht
    Alkaline-earth diffusion in mixed cation glasses
    Defect and Diffusion Forum 289-292 (2009) 615-620.

    A. Schmitz, H. Bracht, F. Natrup, and W. Graf
    Sherardizing - galvanizing steel with zinc from the vapour phase
    Best paper award of the Bodycote 2008 Prize Paper Competition
    International Heat Treatment and Surface Engineering 2 (2009) 49-54.

    F.V. Natrup, M. Grofmeier, and H. Bracht
    Self- and foreign alkaline-earth diffusion in mixed cation glasses
    Solid State Ionics 180 (2009) 109-115.

    R. Kube, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. E. Haller, S. Paul, and W. Lerch
    Simultaneous diffusion of Si and Ge in isotopically controlled Si1-xGex -heterostructures
    Materials Science in Semiconductor Processing 11 (2008) 378-383.

    A. Chroneos, R.W. Grimes, and H. Bracht
    Impact of germanium on vacancy clustering in germanium-doped silicon
    Journal of Applied Physics 105 (2009) 06102-1(3).

    A. Chroneos, R.W. Grimes, H. Bracht, and B.P. Uberuaga
    Engineering the free vacancy and active donor concentrations in donor-doped ger-manium by phosphorous and arsenic double doping
    Journal of Applied Physics 104 (2008) 113724-1(4).

    A. Chroneos, H. Bracht, R. W. Grimes, and B. P. Uberuaga
    Phosphorous clustering in germanium-rich silicon germanium
    Materials Science and Engineering B 154-155 (2008) 72-75.

    A. Chroneos and H. Bracht
    Concentration of intrinsic defects and self-diffusion in GaSb
    Journal of Applied Physics 104 (2008) 093714-1(5).

    A. Chroneos, H. Bracht, C. Jiang, B.P. Uberuaga, and R.W. Grimes
    Non-linear stability of E-centers in Si1-xGex: Electronic structure calculations
    Physical Review B 78 (2008) 195201-1(7).

    E. Hüger, U. Tietze, D. Lott, H. Bracht, D. Bougeard, E.E. Haller, H. Schmidt
    Self-diffusion in germanium isotope multilayers at low temperatures
    Applied Physics Letters, 93 (2008) 162104-1(3).

    H. Bracht and A. Chroneos
    The vacancy in silicon: A critical evaluation of experimental and theoretical results
    Journal of Applied Physics 104 (2008) 076108-1(3).

    M. Posselt, F. Gao, and H. Bracht
    Correlation between self-diffusion in Si and the migration mechanisms of vacancies and self-interstitials: An atomistic study
    Physical Review B 78 (2008) 035208-1(9).

    H. Bracht
    Diffusion and defect reactions in isotopically controlled semiconductors
    Diffusion Fundamentals 8 (2008) 1.1-1.8.

    A. Chroneos, R. W. Grimes, B. P. Uberuaga, and H. Bracht
    Diffusion and defect reactions between donors, C and vacancies in Ge. II. Atomistic calculations of related complexes
    Physical Review B 77 (2008) 235208-1(7).

    S. Brotzmann, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. Simoen, E. E. Haller, J. S. Christensen, and P. Werner
    Diffusion and defect reactions between donors, C and vacancies in Ge. I: Experimental results
    Physical Review B 77 (2008) 235207-1(13).

    A. Chroneos, H. Bracht, R.W. Grimes, and B.P. Uberuaga
    Vacancy-mediated dopant diffusion activation enthalpies for germanium
    Applied Physics Letters 92 (2008) 172103-1(3).

    S. Schneider, H. Bracht, M. C. Pedersen, J. Lundsgaard Hansen, and A. Nylandsted Larsen
    Proton irradiation of germanium isotope multilayer structures at elevated temperatures
    Journal of Applied Physics, Journal of Applied Physics, 103 (2008) 033517-1(5).

    S. Brotzmann and H. Bracht
    Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
    Journal of Applied Physics, 103 (2008) 033508-1(7).

    M. Posselt, B. Schmidt, W. Anwand, R. Grötzschel, V. Heera, A. Mücklich, H. Hortenbach, S. Gennaro, M. Bersani, D. Giubertoni, A. Möller, and H. Bracht
    P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation
    J. Vac. Sci. Technol. B, 26 (2008) 430-434.

    K. Sunder, H. Bracht
    Defect reactions in gallium antimonide studied by zinc and self-diffusion
    Physica B 401-402 (2007) 262-265.

    A. Chroneos, R.W. Grimes, B.P. Uberuaga, S. Brotzmann, and H. Bracht
    Vacancy-arsenic clusters in germanium
    Applied Physics Letters 91 (2007) 192106.

    M. Grofmeier, F.V. Natrup, and H. Bracht
    Barium diffusion in mixed cation glasses
    Physical Chemistry Chemical Physics 9 (2007) 5822-5827.

    K. Sunder, H. Bracht, S.P. Nicols, and E.E. Haller
    Zinc and gallium diffusion in gallium antimonide
    Physical Review B 75 (2007) 245210-1(9).

    A. Schirmeisen, A. Taskiran, H. Fuchs, H. Bracht, S. Murugavel, and B. Roling
    Fast interfacial ionic conduction in nanostructured glass ceramics
    Physical Review Letters 98 (2007) 225901-1(4).

    H. Bracht, H.H. Silvestri, I.D. Sharp, E. E. Haller, J.L. Hansen and A. Nylandsted Larsen
    Self- and foreign-atom diffusion in semiconductor isotope heterostructures - Part II: Experimental results for silicon
    Physical Review B 75 (2007) 035211-1(21).

    H. Bracht
    Self- and foreign-atom diffusion in semiconductor isotope heterostructures - Part I: Continuum theoretical calculations
    Physical Review B 75 (2007) 035210-1(16).

    H. Bracht and S. Brotzmann
    Atomic transport in germanium and the mechanism of arsenic diffusion
    Materials Science in Semiconductor Processing 9 (2006) 471-476.

    H. Bracht
    Advanced dopant and self-diffusion studies in silicon
    Nuclear Instruments and Methods in Physics Research B 253 (2006) 105-112.

    H.H. Silvestri, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E.E. Haller
    Diffusion of silicon in crystalline germanium
    Semiconductor Science and Technology 21 (2006) 758-762.

    H. Bracht
    Diffusion mediated by doping and radiation-induced point defects
    Physica B 376-377 (2006) 11-18.

  • 2001 to 2005

    H. H. Silvestri, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E.E. Haller
    Diffusion of Silicon in Germanium
    Proc. 27th Intl. Confr. on the Physics of Semiconductors (ICPS-27), July 26-30, 2004, Flagstaff, AZ; J. Menendez and C. G. Van de Walle, eds. AIP Confr. Proc. 772, 97-98 (2005).

    F.V. Natrup and H. Bracht
    Correlation between the cation radii and the glass transition in mixed-cation silicate glasses
    Phys. Chem. Glasses 46 (2005) 95-98.

    F. V. Natrup, H. Bracht, S. Murugavel, B. Roling
    Cation diffusion and ionic conductivity in soda-lime silicate glasses
    Phys. Chem. Chem. Phys. 7 (2005) 2279-2286 (selected as hot article).

    H. Bracht and S. Brotzmann
    Zinc diffusion in gallium arsenide and the properties of gallium interstitials
    Phys. Rev. B., 71 (2005) 115216 -1(10).

    B. Roling, A. Schirmeisen, H. Bracht, A. Taskiran, H. Fuchs, S. Murugavel, F. Natrup
    Nanoscopic study of the ion dynamics in a LiAlSiO4 glass ceramic by means of electrostatic force spectroscopy
    Phys. Chem. Chem. Phys. 7 (2005) 1472-1475.

    H. Bracht, H. H. Silvestri and E. E. Haller
    Advanced diffusion studies with isotopically controlled materials
    Solid State Communications, 133 (2005) 727-735

    H. Bracht, R. Staskunaite, E.E. Haller, P. Fielitz, G. Borchardt und D. Grambole
    Silicon diffusion in sol-gel derived isotopically enriched silica glasses
    Journal of Applied Physics, 97 (2005) 46107-1-3.

    H. Bracht
    Guest Editor of the Zeitschrift für Metallkunde on the occasion of Prof. H. Mehrer's 65th Birthday
    Volume 95, Oktober 2004.

    H. Bracht, H.H. Silvestri, I.D. Sharp, S.P. Nicols, J.W. Beeman, J.L. Hansen, A. Nylandsted Larsen, and E.E. Haller
    Self- and dopant diffusion in Si isotope multilayer structures
    Proceedings of the 26th International Conference on Physics of Semiconductors (Edinburgh, 2002). Institute of Physics Conference Series No 171 (2003) C3.8.

    A. Schirmeisen, A. Taskiran, H. Fuchs, B. Roling, S. Murugavel, H. Bracht, and F. Natrup
    Probing ion transport at the nanoscale: Time-domain electrostatic force spectroscopy on glassy electrolytes
    Appl. Phys. Lett. 85 (2004) 2053-2055.

    H. Bracht
    Copper related diffusion phenomena in germanium and silicon
    Mater. Sci. Semicond. Process. 7 (2004) 113-124.

    K. Rüschenschmidt, H. Bracht, N.A. Stolwijk, M. Laube, G. Pensl, G.R. Brandes
    Self-diffusion in isotopically enriched silicon carbide and its correlation with dopant diffusion
    J. Appl. Phys. 96 (2004) 1458-1463.

    A. Rodriguez, H. Bracht, I. Yonenaga
    Impact of high B concentrations and high dislocation densities on Au diffusion in Si
    J. Appl. Phys 95 (2004) 7841-7849.

    H. Mehrer, H. Bracht, S. Divinski, N. Stolwijk
    Diffusion in Materialien
    Forschungsjournal der Universität Münster, November 2003, 51-58.

    H. Bracht, J. Fage Pedersen, N. Zangenberg, A. Nylandsted Larsen, E.E. Haller, G. Lulli, M. Posselt
    Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures
    Physical Review Letters 91 (2003) 245501-1(4).

    H.H Silvestri, H. Bracht, I.D. Sharp, J.L. Hansen, A. Nylandsted Larsen, E.E. Haller
    Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic Isotopically Controlled Silicon Heterostructures
    Proceedings of the 26th International Conference on Physics of Semiconductors (Edinburgh, 2002). Inst. Phys. Conf. Ser. 171 (2003) C3.8.

    T.A. Frewen, T. Sinno, E. Dornberger, R. Hoelzl, W. von Ammon, and H. Bracht
    Global parameterization of multiple point defect dynamics models in silicon
    Journal of the Electrochemical Society 150 (2003) G673-682.

    S. Voß, N.A. Stolwijk, H. Bracht, A. Nylandsted Larsen, H. Overhof
    Substitutional Zn in SiGe: Deep level transient spectroscopy and electron density calculations
    Physical Review B 68 (2003) 035208-1(9).

    Koeder, S. Frank, W. Schoch, V. Avrutin, W. Limmer, K. Thonke, R. Sauer, A. Waag, M. Krieger, K. Zuern, P. Ziemann, S. Brotzmann, H. Bracht
    Curie temperature and carrier concentration gradient in epitaxy-grown Ga1-xMnxAs layers
    Applied Physics Letters 82 (2003) 3278-3280.

    S. Voß, N.A. Stolwijk, and H. Bracht
    Spreading-resistance profiling of silicon and germanium at variable temperature
    Journal of Applied Physics 92 (2002) 4809-4819.

    F. Natrup, H. Bracht, C. Martiny, S. Murugavel, and B. Roling
    Diffusion of calcium and barium in alkali alkaline-earth silicate glasses
    Physical Chemistry Chemical Physics 4 (2002) 3225-3231.

    C. Martiny, S. Murugavel, B. Roling, F. Natrup, H. Bracht, and M.D. Ingram
    Mobilities of divalent ions in glass
    Conference Proceedings of the International Congress on Glass (Edinburgh, 2001), Glass Technol. 43C (2002) 309-314.

    I.D. Sharp, H. Bracht, H.H Silvestri, S.P. Nicols, J.W. Beeman, J.L. Hansen, A. Nylandsted Larsen, E.E. Haller
    Self- and dopant diffusion in extrinsic boron doped isotopically controlled silicon multilayer structures
    Materials Research Society Symposium Proceedings 719 (2002) F13.11.1-F13.11.6.

    H.H Silvestri, I.D. Sharp, H. Bracht, S.P. Nicols, J.W. Beeman, J.L. Hansen, A. Nylandsted Larsen, E.E. Haller
    Dopant and self-diffusion in extrinsic n-type silicon isotopically controlled heterostructures
    Materials Research Society Symposium Proceedings 719 (2002) F13.10.1-F13.10.6.

    P.N. Grillot, S.A. Stockman, J.-W. Huang, H. Bracht, and Y.L. Chang
    Acceptor diffusion and segregation in (AlxGa1-x)0.5In0.5P heterostructures
    Journal of Applied Physics 91 (2002) 4891-4899.

    N.A. Stolwijk and H. Bracht
    Solubility and segregation of impurities and native point defects in germanium
    in Semiconductors Subvolume A2α: Impurities and Defects in Groups IV Elements, IV-IV and III-V Compounds, Landolt Börnstein New Series Vol. III/41, p. 382-386 (Springer, Berlin 2002).

    H. Bracht and N.A. Stolwijk
    Solubility, segregation and distribution coefficients of impurities and defects in silicon
    in Semiconductors, Subvolume A2α: Impurities and Defects in Groups IV Elements, IV-IV and III-V Compounds, Landolt Börnstein New Series Vol. III/41, p. 77-169 (Springer, Berlin 2002).

    E.E. Haller and H. Bracht
    Self-diffusion in isotopically controlled semiconductors
    Springer Proceedings in Physics 87 (2001) 1373-1376.

    B. Jahnen, M. Luysberg, K. Urban, H. Bracht, R. Schmidt, C. Ungermanns, and T. Bleuel
    Interdiffusion in GaSb/AlxGa1-xSb heterostructures
    IInst. Phys. Conf. Ser. No 169 (2001) 205-210.

    S.P. Nicols, H. Bracht, M. Benamara, Z. Liliental-Weber and E.E. Haller
    Mechanism of zinc diffusion in gallium-antimonide
    Physica B 308-310 (2001) Phonon spectroscopy of defects correlated with the diffusion of Zn into Si, 854-857.

    H. Bracht, M.S. Norseng, E.E. Haller, and K. Eberl
    Zn-diffusion enhanced Ga diffusion in GaAs isotope heterostructures
    Physica B 308-310 (2001) 831-834.

    K. Rüschenschmidt, H. Bracht, M. Laube, N.A. Stolwijk, and G. Pensl
    Diffusion of boron in silicon carbide
    Physica B 308-310 (2001) 734-737.

    H. Bracht, S.P. Nicols, E.E. Haller, J.P. Silveira, and F. Briones
    Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures
    Journal of Applied Physics 89 (2001) 5393-5399.

    S. Voß, H. Bracht, and N.A. Stolwijk
    High-temperature spreading-resistance profiling for the characterization of impurity distributions in n-type silicon
    Material Science in Semiconductor Processing 4 (2001) 67-70.

    H. Bracht, N.A. Stolwijk, M. Laube, and G. Pensl
    Modelling of boron diffusion in silicon carbide
    Materials Science Forum 353-356 (2001) 327-330.

    H. Bracht
    Atomic mechanims of mass transport in elemental and compound semiconductors
    Habilitationsschrift, Westfälische Wilhelms-Universität Münster (2001).

  • 1996 to 2000

    H. Bracht
    Self- and foreign atom diffusion mechanisms in silicon
    Proceeding of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials (2000) 49-58.

    H. Bracht, N.A. Stolwijk, M. Laube, and G. Pensl
    Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism
    Applied Physics Letters 77 (2000) 3188-3190.

    H. Bracht, S.P. Nicols, W. Walukiewicz, J.P. Silveira, F. Briones, and E.E. Haller
    Large disparity between gallium and antimony self-diffusion in gallium antimonide
    NATURE 408 (2000) 69-72.

    A. Giese, N.A. Stolwijk, and H. Bracht
    Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information
    Applied Physics Letters 77 (2000) 642-644.

    A. Giese, N.A. Stolwijk, and H. Bracht
    Short time diffusion of copper and nickel into germanium wafers: special backside boundary conditions for studying vacancy properties
    Advances in Science and Technology (eds. P. Vincenzini, V. Buscaglia) 29, Part A (2000) 515-523.

    H. Bracht and E.E. Haller
    Comment on Self-diffusion in Silicon: Similarity between the Properties of Native Point Defects published by Ural et al. Phys. Rev. Lett. 83 (1999) 3454
    Physical Review Letters 85 (2000) 4835.

    H. Schroth, K. Laßmann, S. Voß, and H. Bracht
    Extreme eduction of the spin-orbit splitting of the deep acceptor ground state of Zns- in Si
    Physical Review Letters 85 (2000) 417-420.

    H. Bracht
    Diffusion mechanisms and intrinsic point-defect properties in silicon
    MRS Bulletin on Defects and Diffusion in Silicon Technology 25 (6) (2000) 22-27.

    A. Giese, H. Bracht, N.A. Stolwijk, and D. Baither
    Microscopic defects in silicon induced by zinc out-diffusion
    Material Science and Engineering B 71 (2000) 160-165.

    H. Bracht
    Diffusion in isotopically controlled semiconductor systems
    Physica B 273-274 (1999) 981-986.

    S. Voß, H. Bracht, and N.A. Stolwijk
    Low-temperature spreading-resistance profiling for the characterization of impurity distributions in germanium
    Physica B 273-27 Phonon spectroscopy of defects correlated with the diffusion of Zn into Si, 4 (1999) 561-564.

    W. Gehlhoff, A. Näser, and H. Bracht
    PR proof of the negatively charged acceptor state Zn- in silicon
    Physica B 273-274 (1999) 264-267.

    H. Bracht, M. Norseng, E.E. Haller, K. Eberl, and M. Cardona
    Enhanced and retarded Ga self-diffusion in Si and Be doped GaAs isotope heterostructures
    Solid State Communications 112 (1999) 301-314.

    A. Masuhr, H. Bracht, N.A. Stolwijk, H. Overhof, and H. Mehrer
    Point defects in silicon after zinc diffusion - a deep level transient spectroscopy and spreading resistance profiling study
    Semiconductor Science and Technology 14 (1999) 435-440.

    H. Bracht
    Native point defects in silicon
    Proceeding Electrochemical Society 99-1 (1999) 357-371; Extended Abstracts 99-1 (1999) 345.

    H. Bracht, E.E. Haller, K. Eberl, and M. Cardona
    Self- and interdiffusion in AlXGa1-XAs/GaAs isotope heterostructures
    Applied Physics Letters 74 (1999) 49-51.

    H. Schroth, K. Laßmann, Chr. Borgmann, and H. Bracht
    Nonlinear Zeeman splitting of the Si:Bes- Acceptor Ground State: Influence of the p1/2 Split-off Valence Band
    Physica Status Solidi (b) 210 (1998) 747-751.

    S. Voß, H. Bracht, N.A. Stolwijk, P. Kringhoj and A. Nylandsted Larsen
    Energy levels of Zn in Si1-xGex alloys: The change-over from highly localized deep states to shallow level centers
    Physica Status Solidi (b) 210 (1998) 771-775.

    A. Giese, H.Bracht, J.T. Walton, N.A. Stolwijk
    Properties of vacancies in silicon determined by out-diffusion of zinc from silicon
    Materials Research Society Symposium Proceedings 527 (1998) 395-400.

    H. Bracht, E.E. Haller, K.Eberl, M. Cardona, and R. Clark-Phelps
    Self-diffusion in isotopically controlled heterostructures of elemental and compound semiconductors
    Materials Research Society Symposium Proceedings 527 (1998) 335-346.

    H. Bracht, W. Walukiewicz, and E.E. Haller
    Modeling of atom diffusion and segregation in semiconductor heterostructures
    Materials Research Society Symposium Proceedings 490 (1998) 93-98.

    S. Voß, H. Bracht, N.A. Stolwijk, P. Kringhoj and A. Nylandsted Larsen
    Energy levels of Zn in Si1-xGex alloys
    Applied Physics Letters 73 (1998) 2331-2333.

    H. Bracht, E.E. Haller, and R. Clark-Phelps
    Silicon self-diffusion in isotope heterostructures
    Physical Review Letters 81 (1998) 393-396.

    A. Giese, H. Bracht, N.A. Stolwijk, and J.T. Walton
    Out-diffusion of Zn from Si: a method to study vacancy properties in Si
    Journal of Applied Physics 83 (1998) 8062-8064.

    N.A. Stolwijk and H. Bracht
    Diffusion in Silicon, Germanium and their alloys: Diffusion in Semiconductors and Non-Metallic Solids
    Subvolume A: Diffusion in Semiconductors, Landolt Börnstein New Series Vol. III/33 (Springer, Berlin 1998) p. 1-257.

    H. Mehrer, C. Herzig, N. A. Stolwijk and H. Bracht
    Editors of the DIMAT-96 Conference Proceedings
    Diffusion in Materials, Defect and Diffusion Forum 143-147 (1997).

    H. Schroth, K. Laßmann, Chr. Borgmann, and H. Bracht
    Electric-dipole spin resonance of Be-doped silicon
    Materials Science Forum 258-263 (1997) 417-422.

    H. Bracht, A. Rodriguez Schachtrup, and I. Yonenaga
    Segregation of gold at dislocations confirmed by gold diffusion into highly dislocated silicon
    Materials Science Forum 258-263 (1997) 1783-1788.

    H. Bracht and A. Rodriguez Schachtrup
    Diffusion of gold into heavily boron-doped silicon
    Materials Research Society Symposium Proceedings 469 (1997) 25-36.

    H. Bracht
    Fast metal diffusion in silicon under intrinsic and extrinsic doping conditions
    Defect and Diffusion Forum 143-147 (1997) 979-992.

    A. Giese, H. Bracht, N.A. Stolwijk, and H. Mehrer
    Diffusion of nickel and zinc in germanium
    Defect and Diffusion Forum 143-147 (1997) 1059-1064.

    A. Rodriguez Schachtrup, H. Bracht, H. Mehrer, and I. Yonenaga
    Diffusion of gold into plastically deformed undoped and boron-doped silicon
    Defect and Diffusion Forum 143-147 (1997) 1021-1026.

    S. Voß, H. Bracht, N.A. Stolwijk, and H. Mehrer
    Electronic properties of Zn in Si1-xGex alloys: A basis for studying Zn diffusion in SiGe
    Defect and Diffusion Forum 143-147 (1997) 1141-1146.

    H. Schroth, K. Laßmann and H. Bracht
    Electric-dipole spin resonance of zinc-related defects in silicon
    The Physics of Semiconductors, ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore), 4 (1996) 2725.

    H. Bracht and H. Overhof
    Kinetics of interstitial-substitutional exchange of Zn, Pt, and Au in Si: experimental results and theoretical calculations
    Physica Status Solidi (a) 158 (1996) 47-55.

  • 1989 to 1995

    N.A. Stolwijk, W. Lerch, and H. Bracht
    Rapid thermal annealing: a tool for studying diffusion processes in semiconductors
    Proceedings of the 3rd International Rapid Thermal Processing Conference RTP'95 (Amsterdam, 1995) 71-78.

    H. Bracht, N.A. Stolwijk, and H. Mehrer
    Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions
    Physical Review B 52 (1995) 16542-16560.

    H. Schroth, R. App, A. Köpf, K. Laßmann, H. Bracht, and N.A. Stolwijk
    Electric-dipole spin resonance of defects correlated with the diffusion of zinc into silicon
    Materials Science Forum 196-201 (1995) 1601-1606.

    H. Bracht, N.A. Stolwijk, and H. Mehrer
    Equilibrium concentrations of intrinsic point defects in silicon determined by zinc diffusion
    Proceeding Electrochemical Society 94-10 (1994) 593-602B; Extended Abstracts 94-1 (1994) 724-725.

    H. Bracht, N.A. Stolwijk, and H. Mehrer
    Thermodynamic properties of self-interstitials in silicon: and experimental investigation
    Materials Science Forum 143-147 (1994) 785-789.

    J. Staiger, P. Groß, K. Laßmann, H. Bracht, and N.A. Stolwijk
    Phonon spectroscopy of defects correlated with the diffusion of Zn into Si
    Materials Science Forum 143-147 (1994) 675-679.

    N.A. Stolwijk, H. Bracht, H.-G. Hettwer, W. Lerch, H. Mehrer, A. Rucki, and W. Jäger
    Defect injection and diffusion in semiconductors
    Materials Science Forum 155-156 (1994) 475-492.

    H. Bracht
    Kurzzeitdiffusion von Zink in Silizium zur Charakterisierung der atomaren Gitterfehler
    Doktorarbeit, Westfälische Wilhelms-Universität Münster (1993).

    H. Bracht, N.A. Stolwijk, H. Mehrer, and I. Yonenaga
    Interstitial-substitutional diffusion kinetics and dislocation-induced trapping of zinc in plastically deformed silicon
    Physica Status Solidi (a) 137 (1993) 499-514.

    H. Bracht, N.A. Stolwijk, H. Mehrer, and I. Yonenaga
    Short time diffusion of zinc in silicon for the study of intrinsic point defects
    Applied Physics Letters 59 (1991) 3559-3561.

    H. Bracht, N.A. Stolwijk, and H. Mehrer
    Diffusion of copper, silver, and gold in germanium
    Physical Review B 43 (1991) 14465-14477.

    A. Almazouzi, J. Bernardini, E.G. Moya, H. Bracht, N.A. Stolwijk, and H. Mehrer
    Diffusion, solubility and thermodynamic properties of gold in solid germanium studied by means of radiotracer and spreading-resistance analysis
    Journal of Applied Physics 70 (1991) 1345-1354.

    N.A. Stolwijk, F. Wenwer, H. Bracht, and H. Mehrer
    Vacancy-mediated interstitial-substitutional diffusion in semiconducting and metallic matrices
    Diffusion in Materials, ed. by A. Laskar et al., NATO ASI Series E- 179 (Kluwer, Dordrecht 1990) p. 297-304.

    H. Bracht
    Untersuchung der Diffusion von Kupfer, Silber und Gold in Germanium
    Diplomarbeit Westfälische Wilhelms-Universität Münster (1989).