Fachbereich 11 - Physik
Institut für Materialphysik
Diffusion and Defects in Elementary and Compound Semiconductors

Interdiffusion in GaSb/Al_xGa_1-xSb heterostructures

We investigated the interdiffusion in GaSb/Al_xGa_1-xSb heterostructures by means of bright-field transmission electron microscopy. Samples grown by metal organic molecular beam epitaxy are subjected to thermal treatment under both gallium-rich and antimony-rich conditions. Concentration profiles of the group-III elements are determined by evaluating changes of thickness fringes of cleaved 90 degrees wedge specimens on a nanometer scale. The experiments reveal that group-III vacancies play a dominant role in GaSb/AlSb interdiffusion and that the interdiffusion coefficient has a nonlinear concentration dependency.

Beteiligte Wissenschaftler:

HDoz. Dr. H. Bracht, Dipl. Ing. B. Jahnen (Institut für Festkörperforschung, Forschungszentrum Jülich), Dr. M. Luysberg (Institut für Festkörperforschung, Forschungszentrum Jülich), Prof. K. Urban (Institut für Festkörperforschung, Forschungszentrum Jülich)

Veröffentlichungen:

B. Jahnen, M. Luysberg, K. Urban, H. Bracht, R. Schmidt, C. Ungermanns, and T. Bleuel: Interdiffusion in GaSb/AlxGa1-xSb heterostructures, Inst. Phys. Conf. Ser. No 169 (2001) 205-210.