Allgemeines Physikalisches Kolloquium
F |
Westfälische Wilhelms-Universität Münster |
F |
Nanodots in SiO2
Prof. Dr. Arne Nylandsted
Larsen
Institute of Physics and Astronomy, Universität
Aarhus (Dänemark)
Nanotechnology is making an
impact on many different areas of silicon technology. Two examples of such
areas will be discussed in the talk, namely the use of silicon-based materials
with embedded nanocrystals for optoelectronic
applications, and nanocrystal-based memory devices.
Silicon has been considered
unsuitable for optoelectronic applications due to its indirect band gap, which
limits its efficiency as a light emitter. Examples from our own research and
the research of others on how nanotechnology has improved the light emission
properties of silicon will be given.
Nanocrystal based memory
devices utilize nanocrystals as charge storage
elements in the gate oxide of a field
effect transistor located in close proximity to the transistor channel.
Examples will be given from our own research on how to produce these
structures.
Einladender:
HDoz. Dr. H. Bracht
Ort: Wilhelm-Klemm-Str.
10, IG I, HS 2
Zeit: Mittwoch, 16. Oktober
2002, 17 Uhr c.t.
Kolloquiums-Kaffee
ab 16:45 Uhr vor dem Hörsaal
Im
Auftrag der Hochschullehrer des Fachbereichs Physik
Prof. Dr. H.
Mehrer