Dr. Iris Niehues

PostDoc

Wilhelm Klemm-Str. 10
48149 Münster

E-Mail: iris.niehues@uni-muenster.de

Tel.: +49 251 83-25336

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Publications

• Strain-dependent exciton diffusion in transition metal dichalcogenides, R. Rosati, S. Brehm, R. Perea-Causin, R. Schmidt, I. Niehues, S. Michaelis de Vasconcellos, R. Bratschitsch, and E. Malic, 2D Materials 8, 015030 (2020)

• Strain tuning of the Stokes shift in atomically thin semiconductors, I. Niehues, P. Marauhn, T. Deilmann, D. Wigger, R. Schmidt, A. Arora, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, Nanoscale 12, 20786-20796 (2020)

• Supercontinuum second harmonic generation spectroscopy of atomically thin semiconductors, T.Stiehm, R. Schneider, J. Kern, I. Niehues, S. Michaelis de Vasconcellos, and R. Bratschitsch, Rev. Sci. Instrum. 90, 083102 (2019)
• Interlayer excitons in bilayer MoS₂ under uniaxial tensile strain, I. Niehues, A. Blob, T. Stiehm, S. Michaelis de Vasconcellos, and R. Bratschitsch, Nanoscale 11, 12788-12792 (2019)
• Thickness determination of MoS₂ , MoSe₂ , WS₂ and WSe₂ on transparent stamps used for deterministic transfer of 2D materials, N. S. Taghavi, P. Gant, P. Huang, I. Niehues, R. Schmidt, S. Michaelis de Vasconcellos, R. Bratschitsch,  M. García-Hernández, R. Frisenda, and A. Castellanos-Gomez, Nano Research 12, 1691-1695 (2019)
• Strain transfer across grain boundaries in MoS₂ monolayers grown by chemical vapor deposition, I. Niehues, A. Blob, T. Stiehm, R. Schmidt, V. Jadriško, B. Radatović, D. Čapeta, M. Kralj, S. Michaelis de Vasconcellos, and R. Bratschitsch, 2D Materials 5, 031003 (2018)
• The acetone bandpass detector for inverse photoemission: Operation in proportional and Geiger-Müller modes, C. Thiede, I. Niehues, A. B. Schmidt, and M. Donath, Meas. Sci. Technol. 29, 6 (2018)
• Inverted valley polarization in optically excited transition metal dichalcogenides, G. Berghäuser, I. Bernal-Villamil, R. Schmidt, R. Schneider, I. Niehues, P. Erhart, S. Michaelis de Vasconcellos, R. Bratschitsch, A. Knorr, and E. Malic, Nature Communications 9, 971 (2018)
• Exciton broadening and band renormalization due to Dexter-like intervalley coupling, I. Bernal-Villamil, G. Berghäuser, M. Selig, I. Niehues, R. Schmidt, R. Schneider, P. Tonndorf, P. Erhart, S. Michaelis de Vasconcellos, R. Bratschitsch, A. Knorr, and E. Malic, 2D Materials 5, 025011 (2018)
• Strain control of exciton-phonon coupling in atomically thin semiconductors , I. Niehues, R. Schmidt, M. Drüppel, P. Marauhn, D. Christiansen, M. Selig, G. Berghäuser, D. Wigger, R. Schneider, L. Braasch, R. Koch, A. Castellanos-Gomez, T. Kuhn, A. Knorr, E. Malic, M. Rohlfing, S. Michaelis de Vasconcellos, and R. Bratschitsch, Nano Lett. 18, 1751-1757 (2018)
• Phonon sidebands in monolayer transition metal dichalcogenides, D. Christiansen, M. Selig, G. Berghäuser, R. Schmidt, I. Niehues, R. Schneider, A. Arora, S. Michaelis de Vasconcellos, R.  Bratschitsch, E. Malic, and A. Knorr, Phys. Rev. Lett.119,187402 (2017)
• Single-photon emitters in GaSe, P. Tonndorf, S. Schwarz, J. Kern, I. Niehues, O. Del Pozo Zamudio, A. Dmitriev, A. Bakhtinov, D. Borisenko, N. Kolesnikov, A. Tartakovskii, S. Michaelis de Vasconcellos, and R. Bratschitsch, 2D Materials 4, 021010 (2017)
• Nanoscale positioning of single-photon emitters in atomically thin WSe₂, J. Kern, I. Niehues, P. Tonndorf, R. Schmidt, D. Wigger, R. Schneider, T. Stiehm, S. Michaelis de Vasconcellos, D. E. Reiter, T. Kuhn, and R. Bratschitsch, Advanced Materials 28, 7101 (2016)
• Reversible uniaxial strain tuning in atomically thin WSe₂, R. Schmidt, I. Niehues, R. Schneider, M. Drüppel, T. Deilmann, M. Rohlfing, S. Michaelis de Vasconcellos, A. Castellanos-Gomez, and R. Bratschitsch,  2D Materials 3, 021011 (2016)
• Nanoantenna-enhanced light-matter interaction in atomically thin WS₂, J. Kern, A. Trügler, I. Niehues, J. Ewering, R. Schmidt, R. Schneider, S. Najmaei, A. George, J. Zhang, J. Lou, U. Hohenester, S. Michaelis de Vasconcellos, and R. Bratschitsch,  ACS Photonics 2, 1260 (2015)

Prizes/ Awards