Allgemeines Physikalisches Kolloquium

F

Westfälische Wilhelms-Universität Münster

F

Nanodots in SiO₂

Prof. Dr. Arne Nylandsted Larsen
Institute of Physics and Astronomy, Universität Aarhus (Dänemark)

Nanotechnology is making an impact on many different areas of silicon technology. Two examples of such areas will be discussed in the talk, namely the use of silicon-based materials with embedded nanocrystals for optoelectronic applications, and nanocrystal-based memory devices.

Silicon has been considered unsuitable for optoelectronic applications due to its indirect band gap, which limits its efficiency as a light emitter. Examples from our own research and the research of others on how nanotechnology has improved the light emission properties of silicon will be given.

Nanocrystal based memory devices utilize nanocrystals as charge storage elements in the gate oxide of a field effect transistor located in close proximity to the transistor channel. Examples will be given from our own research on how to produce these structures.

Einladender: HDoz. Dr. H. Bracht

Ort: Wilhelm-Klemm-Str. 10, IG I, HS 2

Zeit: Mittwoch, 16. Oktober 2002, 17 Uhr c.t.

Kolloquiums-Kaffee ab 16:45 Uhr vor dem Hörsaal

Im Auftrag der Hochschullehrer des Fachbereichs Physik

Prof. Dr. H. Mehrer