Institut für Festkörpertheorie

Institut für Festkörpertheorie
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Prof. Dr. J. Pollmann

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Institut für Festkörpertheorie


Publikationen


2011 2010 2009 2008 2007 2006 2005 2004 2003 2002
2001 2000 1999 1998 1997 1996 1995 1994 1993 1992
1991 1990 1989 1988 1987 1986 1985 1984 1983 1982
1981 1980 1979 1978 1977 1976 1975 1974 1973 1972



2012


  1. C. Sommer, P. Krüger, and J. Pollmann
    Quasiparticle band structure of alkali-metal fluorides, oxides, and nitrides
    Phys. Rev. B 85, 165119 (2012)


2011


  1. C. Wieferink, P. Krüger, and J. Pollmann
    Influence of tip structure on tip-sample interaction forces at the KBr(001) surface: Results from ab initio investigations
    Phys. Rev. B 84, 195402 (2011)

  2. B. Stärk, P. Krüger, and J.Pollmann
    Magnetic anisotropy of thin Co and Ni films on diamond surfaces
    Phys. Rev. B. 84, 195316 (2011)

  3. C. Wieferink, P. Krüger, and J. Pollmann
    Simulations of friction force microscopy on the KBr(001) surface based on ab initio calculated tip-sample forces
    Phys. Rev. B 83, 235328 (2011)


2010


  1. J. Wieferink, P. Krüger, and J. Pollmann
    Ab-initio study of atomic hydrogen diffusion on the clean and hydrogen-terminated Si(001) surface
    Phys. Rev. B 82, 075323 (2010)

  2. B. Stärk, P. Krüger, and J. Pollmann
    Magnetic Properties of Co and Ni Multilayers on Diamond Surfaces
    Proceedings of NIC Symposium, 24-25 February 2010, FZ-Jülich, p. 207 (2010)

  3. B. Stärk, P. Krüger, and J. Pollmann
    Cobalt multilayers on diamond surfaces: An ab-initio study
    Phys. Rev. B 81, 035321 (2010)


2009



2008


  1. B. Baumeier, P. Krüger, and J. Pollmann
    First-principles investigation of the atomic and electronic structure of the 4H-SiC(1102)-c(2x2) surface
    Phys. Rev. B 78, 145318 (2008)

  2. J. Wieferink, P. Krüger, and J. Pollmann
    First-principles study of benzene adsorption on the SiC(001)-(3x2) surface
    Phys. Rev. B 78, 165315 (2008)

  3. B. Baumeier, P. Krüger, J. Pollmann, and G. Vajenine
    Electronic structure of alkali-metal fluorides, oxides and nitrides: Density-functional calculations including self-interaction corrections
    Phys. Rev. B 78, 125111 (2008)

  4. P. Krüger, B. Baumeier, and J. Pollmann
    First-Principles Investigation of an Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface
    Phys. Rev. B 77, 085329 (2008)

  5. X. Peng, P. Krüger, and J. Pollmann
    Adsorption processes of hydrogen molecules on SiC(001), Si(001), and C(001) surfaces
    New Journal of Physics 10, 125028 (2008)

  6. M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
    Desorption force on hydrogen atoms from resonant excitations of the H:Si(001)-(2x1) surface
    Surf. Sci. 602, 3208 (2008)


2007


  1. B. Baumeier, P. Krüger, and J. Pollmann
    Bulk and surface electronic structure of alkaline-earth metal oxides: Bound surface and image-potential states from first principles
    Phys. Rev. B 76, 205404 (2007)

  2. X. Peng, P. Krüger, and J. Pollmann
    Hydrogenated SiC(001)-(3x2) surface: Semiconducting and metallic structures
    Phys. Rev. B 76, 125303 (2007)

  3. B. Baumeier, P. Krüger, and J. Pollmann
    Structural, elastic, and electronic properties of SiC, BN, and BeO nanotubes
    Phys. Rev. B 76, 085407 (2007)

  4. J. Wieferink, P. Krüger, and J. Pollmann
    First-principles study of acetylene adsorption on b-SiC(001)-(3x2)
    Phys. Rev. B 75, 153305 (2007)

  5. X. Peng, P. Krüger, and J. Pollmann
    Why thermal H2 molecules adsorb on SiC(001)-c(4-2) and not on SiC(001)-(3x2) at room temperature
    Phys. Rev. B 75, 073409 (2007)

  6. J. Pollmann
    There is plenty of room for new structures at the bottom
    Surf. Sci. 601, 883-884 (2007)

  7. B. Baumeier, P. Krüger, and J. Pollmann
    Atomic and electronic structure of BeO and the BeO(1010) surface: An ab initio investigation
    Phys. Rev. B 75, 045323 (2007)


2006


  1. J. Wieferink, P. Krüger, and J. Pollmann
    Improved hybrid algorithm with Gaussian basis sets and plane waves: First-principles calculations of ethylene adsorption on b-SiC(001)-(3x2)
    Phys. Rev. B 74, 205311 (2006)

  2. N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
    Electronic excitations of the H:Si(001)-(2x1) monohydride surface
    Phys. Rev. B 74, 155405 (2006)

  3. X. Peng, J. Wieferink, P. Krüger, and J. Pollmann
    Structural and Electronic Properties of Clean and Adsorbate-Covered (001) Surfaces of Cubic SiC
    Proceedings of NIC Symposium, 1-2 March 2006, p. 135, FZ-Jülich (2006)

  4. X. Peng, P. Krüger and J. Pollmann
    Hydrogen-induced metallization of the 3C-SiC(001)-(3x2) surface
    Surf. Sci. 600, 3564 (2006)

  5. J. Wieferink, P. Krüger, and J. Pollmann
    First-principles study of acetylene and ethylene adsorption on b-SiC(001)-(2x1)
    Phys. Rev. B 73, 115309 (2006)

  6. B. Baumeier, P. Krüger, and J. Pollmann
    Self-interaction-corrected pseudopotentials for silicon carbide
    Phys. Rev. B 73, 195205 (2006)

  7. P. Krüger, and J. Pollmann
    Generalized reconstruction model of SiC(001)-(nx2) surfaces and Si ad-dimer nanostrings
    Phys. Rev. B 73, 035327 (2006)


2005


  1. M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
    Dynamics of excited electronic states at clean and adsorbate-covered insulator surface
    Surf. Sci. 593, Issues 1-3, p. 19-25 (2005)

  2. X. Peng, P. Krüger, and J. Pollmann
    Metallization of the 3C-SiC(001)-(3x2) surface induced by hydrogen adsorption: A first-principles investigation
    Phys. Rev. B 72, 245320 (2005)

  3. N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
    Femtosecond dynamics of excited states of CO adsorbed on MgO(001)-(1x1)
    Phys. Rev. B 71, 045407 (2005)


2004


  1. A. Mazur, and J. Pollmann
    Surface phonons of D:C(001)-(2x1)
     J. Phys. Chem. 108, 14570 (2004)

  2. J. Pollmann, and P. Krüger
    Reconstruction of cubic SiC surfaces
    J. Phys.: Condens. Matter 16, S1659 - S1703 (2004)

  3. N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
    Fast Initial Decay of Molecular Excitations at Insulator Surfaces
    Phys. Rev. Lett. 92, 216805 (2004)

  4. U. Freking, P. Krüger, A. Mazur, and J. Pollmann
    Surface phonons of Si(001)-(1x1) dihydride
    Phys. Rev. B 69, 035315 (2004)


2003


  1. J. Pollmann and P. Krüger
    Green Functions in the Theory of Semiconductor Surfaces
    Prog. Surf. Sci. 74, 269 (2003)

  2. M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
    Image States and Excitons at Insulator Surfaces with Negative Electron Affinity
    Phys. Rev. Lett. 91, 256802 (2003)

  3. N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
    Electronic excitations of CO adsorbed on MgO(001)
    Appl. Phys. A 78, 213 (2003)

  4. S. Thachepan, H. Okuyama, T. Aruga, M. Nishijima, T. Ando, A. Mazur, and J. Pollmann
    Surface phonons of C(001)(2x1)-H
    Phys. Rev. B 68, 041401(R) (2003)

  5. F. Sökeland, M. Rohlfing, P. Krüger, and J. Pollmann
    Density functional and quasiparticle band-structure calculations for GaxAl1-xN and GaxIn1-xN alloys
    Phys. Rev. B 68, 075203 (2003)

  6. N.-P. Wang, M. Rohlfing, P. Krüger and J. Pollmann
    Quasiparticle band structure and optical spectrum of LiF(001)
    Phys. Rev. B 67, 115111 (2003)


2002


  1. Fu-He Wang, P. Krüger and J. Pollmann
    First principles investigation of the C-terminated b-SiC(001)-c(2x2) surface
    Phys. Rev. B 66, 195335 (2002)

  2. M. Rohlfing and J. Pollmann
    Localization of Optically Excited States by Self-Trapping
    Phys. Rev. Lett. 88, 176801 (2002)

  3. J. Pollmann, P. Krüger, A. Mazur and M. Rohlfing
    Electrons, Phonons and Excitons at Semiconductor Surfaces
     Festkörperprobleme/Advances in Solid State Physics, Springer Verlag, Heidelberg (2002), pp. 189-206

  4. Fu-He Wang, P. Krüger, and J. Pollmann
    Surface electronic structure of GaN(0001)-(1x1): Comparison between theory and experiment
    Surf. Sci. 499, Issues 2-3, p. 193-202 (2002)

  5. U. Freking, A. Mazur and J. Pollmann
    Structural and vibronic properties of the dihydride-terminated Si(001) surface
    in High Performance Computing in Science and Engineering 2001, ed. by E. Krause and W. Jäger, Springer Verlag, Berlin (2002), pp. 202-209

  6. C. Kreis, S. Werth, R. Adelung, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
    Surface resonances at transition metal dichalcogenide heterostructures
    Phys. Rev. B 65, 153314 (2002)


2001


  1. U. Freking, A. Mazur and J. Pollmann
    Surface phonons of S:Si(001)-(1x1)
    Phys. Rev. B 64, 245341 (2001)

  2. Fu-He Wang, P. Krüger, and J. Pollmann
    Electronic structure of 1x1 GaN(0001) and GaN(0001) surfaces
    Phys. Rev. B 64, 035305 (2001)

  3. K. Rossnagel, O. Seifarth, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
    Fermi surface of 2H-NbSe2 and its implications on the charge-density-wave mechanism
    Phys. Rev. B 64, 235119 (2001)

  4. K. Rossnagel, L. Kipp, M. Skibowski, C. Solterbeck, T. Strasser, W. Schattke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
    Three-dimensional Fermi surface determination by ARPES
    Phys. Rev. B 63, 125104 (2001)

  5. U. Freking, A. Mazur and J. Pollmann
    Electronic, structural and vibrational properties of chalcogenides on Si(001) and Ge(001) surfaces
    in High Performance Computing in Science and Engineering 2000, ed. by E. Krause and W. Jäger, Springer Verlag, Berlin (2001), pp. 128-142

  6. M. Rohlfing and J. Pollmann
    Dielectric function and reflectivity spectrum of SiC polytypes
    Phys. Rev. B 63, 125201 (2001)

  7. Th. Böker, R. Severin, A. Müller, C. Janowitz, R. Manzke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
    Band structures of MoS2, MoSe2 and MoTe2: Angular-resolved photoelectron spectroscopy in the constant-final-state mode and ab-initio calculations
    Phys. Rev. B 64, 235305 (2001)

  8. R. Kucharczyk, U. Freking, P. Krüger and J. Pollmann
    Electronic properties of AlGaAs-based biperiodic superlattices via pseudopotential calculations
    Surf. Sci. 482-485, 612 (2001)


2000


  1. U. Freking, A. Mazur and J. Pollmann
    Vibronic studies of adsorbate-covered semiconductor surfaces with the help of high performance computing
    in High Performance Computing in Science and Engineering '99, ed. by E. Krause and W. Jäger, Springer Verlag, Berlin (2000), pp. 149-162

  2. J. Pollmann and P. Krüger
    Electronic Structure of Semiconductor Surfaces
    Chapter 2, in Handbook of Surface Science, Elsevier Science B.V. (2000), pp. 96-208

  3. W. Lu, P. Krüger, and J. Pollmann
    Atomic and electronic structure of silicate adlayers on polar hexagonal SiC surfaces
    Phys. Rev. B 61, 13737-13744 (2000)

  4. C. Stampfl, Ch. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann
    Native defects and impurities in InN: First-principles studies using the local-density approximation and self- interaction and relaxation-corrected pseudopotentials
    Phys. Rev. B 61, R7846 (2000)

  5. W. Lu, P. Krüger, and J. Pollmann
    Ab-initio studies of the b-SiC(001)-(5x2) surface
    Phys. Rev. B 61, 2680 (2000)

  6. M. Rohlfing and J. Pollmann
    Calculation of the U Parameter of the Mott-Hubbard Insulator 6H-SiC(0001)-(√3x√3)
    Phys. Rev. Lett. 84, 135 (2000)

  7. J. Pollmann, P. Krüger and W. Lu
    Theory of Structural and Electronic Properties of Cubic SiC Surfaces
    Materials Science Forum 338-342, 369 (2000)

  8. W. Lu, P. Krüger and J. Pollmann
    Ab initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√3 x √3)-R30° Reconstruction
    Materials Science Forum 338-342, 349 (2000)


1999


  1. D. Voß, P. Krüger, A. Mazur, and J. Pollmann
    Atomic and electronic structure of WSe2 from ab- initio theory: Bulk crystal and thin film systems
    Phys. Rev. B 60, 14311 (1999)

  2. W. Lu, P. Krüger, and J. Pollmann
    Atomic and electronic structure of b-SiC(001)-(3x2)
    Phys. Rev. B 60, 2495 (1999)


1998


  1. J. Neuhausen, V. K. Evstaf'iev, Th. Block, E. W. Finckh, W. Tremel, L. Augustin, H. Fuchs, D. Voß, P. Krüger, A. Mazur, and J. Pollmann
    Scanning probe microscopy study of the metal-rich layered chalcogenides TaM2Te2 (M = Co, Ni)
    Chemistry of Materials, 10, 3870 (1998)

  2. W. Lu, P. Krüger, and J. Pollmann
    Missing-row asymmetric-dimer reconstruction of SiC(001)- c(4x2)
    Phys. Rev. Lett. 81, 2292 (1998)

  3. D. Vogel, P. Krüger, and J. Pollmann
    Ab-initio electronic structure calculations of silver halides with SIRC pseudopotentials
    Phys. Rev. B 58, 3865 (1998)

  4. V. Gräschus, A. Mazur, P. Krüger and J. Pollmann
    Surface phonons of As:Si(111)-(1x1) and As:Si(001)- (2x1)
    Phys. Rev. B 57, 13175 (1998)

  5. A. Glebov, J. P. Toennies, S. Vollmer, S. A. Safron, J. G. Skofronik, V. Gräschus, A. Mazur, and J. Pollmann
    Phonon dynamics of the deuterated C(111)-(1x1) surface: Experiment and theory
    Phys. Rev. B 57, 10082 (1998)

  6. M. Rohlfing, P. Krüger, and J. Pollmann
    Role of semicored electrons in quasiparticle band- structure calculations
    Phys. Rev. B 57, 6485 (1998)

  7. D. Vogel, P. Krüger, and J. Pollmann
    Ab-initio calculations of CdS, CdSe and CdTe surfaces
    Surf. Sci. 402-404, 774 (1998)

  8. G. Hirsch, P. Krüger, and J. Pollmann
    Surface passivation of GaAs(001) by sulfur: ab-initio studies
    Surf. Sci. 402-404, 778 (1998)

  9. K. Würde, P. Krüger, A. Mazur, and J. Pollmann
    First-principles investigations of the atomic and electronic structure of Pb, Sn and Ge adsorbed on the Ge(111)-( ) surface
    Surface Review and Letters 5, 105 (1998)

  10. M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
    Structure of 6H-SiC(0001) surfaces from ab-initio calculations
    Surface Review and Letters 5, 199 (1998)


1997


  1. M. Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle calculations of semicore states in Si, Ge, and CdS
    Phys. Rev. B 56, R7065 (1997)

  2. M. Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle calculations of surface core-level shifts
    Phys. Rev. B 56, 2191 (1997)

  3. J. Pollmann, P. Krüger, and M. Sabisch
    Atomic and electronic structure of SiC surfaces from ab- initio calculations
    phys. stat. sol. (b) 202, 421 (1997)

  4. A. Mazur, B. Sandfort, V. Gräschus, and J. Pollmann
    Phonons at Hydrogen-Terminated Si and Diamond Surfaces
    in: 'Festkörperprobleme/Advances in Solid State Physics', Vol. 36, Vieweg, 1997, p. 181

  5. V. Gräschus, A. Mazur, and J. Pollmann
    Surface phonons of H:Si(110)-(1x1)
    Phys. Rev. B 56, 6482 (1997)

  6. D. Vogel, P. Krüger, and J. Pollmann
    Structural and electronic properties of group III- nitrides
    Phys. Rev. B 55, 12836 (1997)

  7. M. Sabisch, P. Krüger, and J. Pollmann
    Ab-initio calculations of structural and electronic properties of 6H-SiC(0001) surfaces
    Phys. Rev. B 55, 10561 (1997)


1996


  1. D. Vogel, P. Krüger, and J. Pollmann
    New pseudopotentials for II-VI semiconductors
    in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
    World Scientific, 1996, p. 617

  2. M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
    Electronic structure of 6H-SiC(0001) surfaces
    in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
    World Scientific, 1996, p. 819

  3. M. Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle calculations for bulk semiconductors and their surfaces
    in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
    World Scientific, 1996, p. 297

  4. P. Krüger and J. Pollmann
    Initial stages of carbon adsorption at the H:C(001) surface
    in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
    World Scientific, 1996, p. 947

  5. V. Gräschus, A. Mazur, and J. Pollmann
    Surface phonons of H:Si(001)-(2x1) monohydride in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
    World Scientific, 1996, p. 931

  6. J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch, and D. Vogel
    Ab-initio calculations of structural and electronic properties of prototype surfaces of group IV, III-V and II-VI semiconductors
    Appl. Surf. Science 104/105, 1 (1996)

  7. V. Gräschus, A. Mazur, and J. Pollmann
    Surface phonons of D:Si(111)-(1x1)
    Surf. Sci. 368, 179 (1996)

  8. Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle band structures of clean, hydrogen- and sulfur-terminated Ge(001) surfaces
    Phys. Rev. B 54, 13759 (1996)

  9. B. Sandfort, A. Mazur, and J. Pollmann
    Surface phonons of hydrogen-terminated semiconductor surfaces: III. Diamond (001) monohydride and dihydride
    Phys. Rev. B 54, 8605 (1996)

  10. D. Vogel, P. Krüger, and J. Pollmann
    Self-interaction and relaxation-corrected pseudopotentials for II-VI semiconductors
    Phys. Rev. B 54, 5495 (1996)

  11. M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing, and J. Pollmann
    First-principles calculations of ?-SiC(001) surfaces
    Phys. Rev. B 53, 13121 (1996)


1995


  1. M. Rohlfing, P. Krüger and J. Pollmann
    Quasiparticle Band Structure of CdS
    Phys. Rev. Lett. 75, 3489 (1995)

  2. M. Rohlfing, P. Krüger and J. Pollmann
    Metallic nature of the symmetric dimer model of Si(001)-(2x1)
    Phys. Rev. B 52, 13753 (1995)

  3. D. Vogel, P. Krüger and J. Pollmann
    Ab initio electronic-structure calculations for II-VI semiconductors using self-interaction-corrected pseudopotentials
    Phys. Rev. B 52, R 14316 (1995)

  4. M. Rohlfing, P. Krüger and J. Pollmann
    Efficient scheme for GW quasiparticle bandstructure calculations with applications to bulk Si and to the Si(001)-(2x1) surface
    Phys. Rev. B 52, 1905 (1995)

  5. M. Sabisch, P. Krüger and J. Pollmann
    Ab initio calculations of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity
    Phys. Rev. B 51, 13367 (1995)

  6. J. Che, A. Mazur and J. Pollmann
    Structural and elctronic properties during the initial stages of Ge-GaAs(110) interface formation
    Phys. Rev. B 51, 14470 (1995)

  7. P. Krüger and J. Pollmann
    Dimer Reconstruction of Diamond, Si and Ge(001) surfaces
    Phys. Rev. Lett. 74, 1155 (1995)

  8. B. Sandfort, A. Mazur and J. Pollmann
    Vibrational correlation functions of hydrogen- terminated C(111)-(1x1) and Si(111)-(1x1) surfaces.
    Phys. Rev. B 51, 7168 (1995)

  9. B. Sandfort, A. Mazur and J. Pollmann
    Surface phonons of hydrogen-terminated semiconductors surfaces: The H:C(111)-(1x1) surface
    Phys. Rev. B 51, 7150 (1995)

  10. B. Sandfort, A. Mazur and J. Pollmann
    Surface phonons of hydrogen-terminated semiconductors surfaces: The H:Si(111)-(1x1) surface
    Phys. Rev. B 51, 7139 (1995)


1994


  1. P. Krüger and J. Pollmann
    Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001)
    Appl. Phys. A 59, 487 (1994)

  2. P. Schröer, P. Krüger, and J. Pollmann
    Selfconsistent electronic structure calculations of the surfaces of the wurtzite compounds ZnO and CdS
    Phys. Rev. B 49, 17092 (1994)

  3. P. Krüger and J. Pollmann
    Bond Length of Ge Dimers at Si(001)
    Phys. Rev. Lett. 72, 1130 C (1994)

  4. B. Sandfort, A. Mazur, and J. Pollmann
    Surface Phonons of H:Si(111)-(1x1)
    Proceedings of ICFSI-4, World Scientific, Singapore, 1994, p.158

  5. P. Schröer, P. Krüger, and J. Pollmann
    First-Principles Atomic and Electronic Structure Calculations of the ZnO Surface
    Proceedings of ICFSI-4, World Scientific, Singapore, 1994, p.85

  6. P. Krüger and J. Pollmann
    Dimer Formation and Electronic Properties of ordered Adlayers at Si(001): Results From Local Density Theory
    Proceedings of the 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI-4), ed. by B. Lengeler, H. Lüth, W. Mönch and J. Pollmann, (World Scientific, Singapore, 1994) p.108

  7. Würde, A. Mazur and J. Pollmann
    Surface electronic structure of Pb(001), Pb(110), and Pb(111)
    Phys. Rev. B 49, 7679 (1994)

  8. W. Aulbur, J. Mählmann, M. Tondera and J. Pollmann
    Variational pair theory of the attractive and extended Hubbard model in d-dimensions
    Z. Phys. B 93, 219 (1994)


1993


  1. P. Schröer, P. Krüger, and J. Pollmann
    Ab initio calculations of the electronic structure of the wurtzite compounds CdS and CdSe
    Phys. Rev. B 48, 18264 (1993)

  2. M. Rohlfing, P. Krüger, and J. Pollmann
    Quasiparticle band-structure calculations for C, Si, Ge, GaAs and SiC using Gaussian-orbital basis sets
    Phys. Rev. B 48, 17791 (1993)

  3. K. Würde, A. Mazur and J. Pollmann
    Electronic Structure of Aluminium Surfaces
    phys. stat. sol. (b) 179, 399 (1993)

  4. P. Schröer, P. Krüger and J. Pollmann
    First-principles Electronic Structure of the Wurtzite Semiconductors ZnO and ZnS
    Phys. Rev. B 47, 6971 (1993)

  5. P. Krüger and J. Pollmann
    Chemical Trends in Adsorption on Semiconductor Surfaces: Results from Local Density Theory
    Proceedings of the 16th Int. Seminar on Surface Physics, Kudowa, Poland 1992; Progress in Surface Science, 42, 351 (1993)

  6. P. Krüger and J. Pollmann
    Ab-Initio Calculations of Si, As, S, Se and Cl Adsorption on Si(001) Surfaces
    Phys. Rev. B 47, 1898 (1993)


1992


  1. J. Pollmann, P. Krüger and A. Mazur
    Electronic, Structural and Vibronic Properties of Chalcogen Monolayers on (001) Surfaces of Elemental Semiconductors
    Proceedings of the 3rd Int. Conf. on the Formation of Semiconductor Interfaces, Rom 1991, Appl. Surf. Science 56- 58, 193 (1992)


1991


  1. P. Krüger and J. Pollmann
    Selfconsistent Electronic Structure of Clean and Adsorbate-Covered Ge(001) Surfaces
    Proceedings of the Vth Symposium on Surface Physics, Chlum Castle, Czechoslowakia, 1990, Progress in Surface Science 35, 3 (1991)

  2. P. Krüger and J. Pollmann
    Self-Consistent Surface Electronic Structure for Semi-infinite Semiconductors from Scattering Theory
    Physica B 172, 155 (1991)


1990


  1. J. Pollmann and P. Krüger
    Total Energy and Electronic Structure of S: Ge(001) and Se: Ge(001)
    Proceedings of the 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, World Scientific (1990) p. 91

  2. E. Landemark, R.I.G. Uhrberg, P. Krüger and J. Pollmann
    Surface Electronic Structure of Ge(001)-(2x1) : Experiment and Theory
    Surf. Sci. Lett. 236, L359 (1990)

  3. P. Krüger and J. Pollmann
    First-Principles Theory of Sulfur Adsorption on Semi- Infinite Ge(001)
    Phys. Rev. Lett. 64, 1808 (1990)

  4. J. Pollmann
    Elektronische Struktur von Halbleiteroberflächen und Halbleitergrenzflächen
    21. IFF-Ferienkurs über ´´Festkörperforschung für die Informationstechnik´´, KFA-Jülich, 1990, p. 8.1-8.42

  5. A. Mazur and J. Pollmann
    Anisotropy of the Mean-Square-Displacements at the Si(001)-(2x1) Surface
    Surf. Sci. 225, 72 (1990)

  6. A. Mazur and J. Pollmann
    Mean-Square-Displacements at the Reconstructed Si(001)-(2x1) Surface
    Proceedings of the 7th Int. Conf. on Solid Surfaces (ICSS-7), Köln 1989, Vacuum 41, 600 (1990)

  7. P. Krüger and J. Pollmann
    Adsorption of Sulfur on Ge(001): First-principles Calculation of Structural and Electronic Properties
    Proceedings of the 7th Int. Conf. on Solid Surfaces (ICSS-7), Köln 1989, Vacuum 41, 638 (1990)


1989


  1. A. Mazur and J. Pollmann
    Lattice Dynamics and Mean-Square-Displacements of the Reconstructed Si(001)-(2x1) Surface
    Proceedings of the 3rd Int. Conf. on Phonon Physics (´´Phonons 89´´), Heidelberg, World Scientific, Singapore (1989) p. 943

  2. A. Mazur and J. Pollmann
    Lattice Dynamics of Si Calculated with a Semiempirical Approach
    Phys. Rev. B 39, 5261 (1989)


1988


  1. P. Krüger and J. Pollmann
    Scattering-Theoretical Method for Semiconductor Surfaces: Self-consistent Formulation and Application to Si(001)-(2x1)
    Phys. Rev. B 38, 10578 (1988)

  2. R. Kalla and J. Pollmann
    Bond-Angle Relaxation and Electronic Structure of Si and Ge Overlayers on (110) Surfaces of III-V Semiconductors
    Surf. Sci. 200, 80 (1988)


1987


  1. B. Gerlach, D. Richter and J. Pollmann
    Excitons in a Homogeneous Magnetic Field: A Modified Perturbation Approach
    Z. Phys. B. 66, 419 (1987)

  2. I. Hernandez-Calderon, H. Höchst, A. Mazur and J. Pollmann
    Angle-Resolved Ultraviolet Photoemission Spectroscopy Study of the Electronic Structure of In Sb (111) Surfaces along the [110] Azimuth
    J. Vac. Sci. Technol. A5(4), 2042 (1987)

  3. J. Pollmann, P. Krüger and A. Mazur
    Self-Consistent Electronic Structure of Semiinfinite Si(001)-(2x1) and Ge(001)-(2x1) with Model Calculations for Scanning Tunneling Microscopy
    J. Vac. Sci. Technol. B5, 945 (1987)


1986


  1. M. Schreiber, M. Fieseler, A. Mazur, J. Pollmann, B. Stock and R.G. Ulbrich
    Dispersive Phonon Focusing in Gallium Arsenide
    Proceedings of the 18. Int. Conf. on the Physics of Semiconductors, Stockholm, edited by Olaf Engström (World Scientific, Singapore, 1986) P. 1373

  2. J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
    Selfconsistent Electronic Structure of Semiinfinite Ge(001)-(2x1)
    Proceedings of the 18. Int. Conf. on the Physics of Semiconductors, Stockholm, edited by Olaf Engström (World Scientific, Singapore, 1986) p. 81

  3. A. Mazur and J. Pollmann
    Surface Vibrational Excitations on Si(001)-(2x1)
    Phys. Rev. Lett. 57, 1811 C (1986)

  4. P. Krüger. A. Mazur, J. Pollmann and G. Wolfgarten
    First-Principles Electronic Structure Theory for Semiinfinite Semiconductors with Applications to Ge(001)-(2x1) and Si(001)-(2x1)
    Phys. Rev. Lett. 57, 1468 (1986)

  5. J. Pollmann. R. Kalla, P. Krüger, A. Mazur and G. Wolfgarten
    Atomic, Electronic, and Vibronic Structure of Semiconductor Surfaces
    Appl. Physics A, Solids and Surfaces A41, 21 (1986)

  6. A. Goldmann. P. Koke, W. Mönch, G. Wolfgarten and J. Pollmann
    Angle-Resolved Photoemission from Si(100): Direct versus Indirect Transitions
    Surface Science 169, 438 (1986)

  7. M. Podgorny, G. Wolfgarten and J. Pollmann
    Bandstructure of SixGe1-x Alloys: Selfconsistent Virtual Crystal Approximation
    J. Phys. C: Solid State Phys. 19, L141 (1986)


1985


  1. G. Wolfgarten, P. Krüger and J. Pollmann
    Self-Consistent Scattering Theoretical Method for Surfaces: Application to Si(100)
    Sol. State Commun. 54, 839 (1985)

  2. P. Krüger, G. Wolfgarten and J. Pollmann
    Nonlocal Density Functional Theory of Solids: Applications of the Weighted Density Approximation to Silicon
    Sol. State Commun. 53, 885 (1985)

  3. P.K. Larsen and J. Pollmann
    Interaction of Hydrogen with GaAs(001)-(2x4)
    Sol. State Commun. 53, 277 (1985)

  4. P. Koke, A. Goldmann, W. Mönch, G. Wolfgarten and J. Pollmann
    Angle-Resolved Photoemission from Si(100): Identification of Bulk Band Transitions
    Proceedings of ECOSS6, York, April 1984; Surf. Sci. 152/153, 1001 (1985)

  5. J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
    Electronic Properties of Semiconductor Surfaces and Interfaces: Selected Results from Green's Function Studies
    Proceedings of ECOSS6, York, April 1984; Surf. Sci. 152/ 153, 977 (1985)


1984


  1. P. Krüger and J. Pollmann
    Green's Function Studies of Ge Adsorption on GaAs(110)
    Phys. Rev. B 30, 3406 (1984)

  2. A. Mazur and J. Pollmann
    Electronic Properties of (211) Surfaces of Group IV and III-V Semiconductors
    Phys. Rev. B 30, 2084 (1984)

  3. P. Krüger and J. Pollmann
    Ge-GaAs Heterostructures: From Chemisorption to Heterojunction Interface Formation
    J. Vac. Sci. Technol. B2, 415 (1984)

  4. J. Pollmann
    Electronic Properties of Interfaces
    Proceedings of the 3rd EPS Conference of the Condensed Matter Division, Lausanne, Schweiz, Helvetia Physica Acta 56, 493 (1983)


1983


  1. M. Schmeits, A. Mazur and J. Pollmann
    Scattering Theoretical Method for Relaxed and Reconstructed Surfaces with Applications to Si(100)-2x1 and GaAs(110)
    Phys. Rev. B 27, 5012 (1983)

  2. J. Pollmann and A. Mazur
    Theory of Semiconductor Heterojunctions
    Proceedings of the Symposium on Interfaces and Contacts, Boston, November 1982, Thin Solid Films 104, 257 (1983)


1982


  1. J. Pollmann
    New Hexagonal Ring Model for the Reconstruction of the Si(111)-7x7 Surface
    Phys. Rev. Lett. 49, 1649 (1982)

  2. A. Mazur and J. Pollmann
    New Evidence for Asymmetric Dimer Resonstruction on the Si(100)-(2x1) Surface
    Phys. Rev. B 26, 7086 (1982)

  3. H. Büttner and J. Pollmann
    Excitons in Polar Semiconductors
    Proceedings 16. Int. Conf. on the Physics of Semiconductors, Montpellier, France; Physica 117 & 118 B, 278 (1982)

  4. J. Pollmann, A. Mazur and M. Schmeits
    On the Electronic Structure of the Si(100)-2x1 Surface
    Proceedings 16. Int. Conf. on the Physics of Semiconductors, Montpellier, France, Physica 117 & 118 B, 771 (1982)

  5. W. Göpel, J. Pollmann, I. Ivanov and B. Reihl
    Angle-Resolved Photoemission from Polar and Nonpolar ZnO Surfaces
    Phys. Rev. B 26, 3144 (1982)

  6. P.K. Larsen, J.F. van der Veen, A. Mazur, J. Pollmann, J.H. Neave and B.A. Joyce
    Surface Electronic Structure of GaAs(001)-2x4: Angle- Resolved Photoemission and Tight Binding Calculations
    Phys. Rev. B 26, 3222 (1982)

  7. J. Beyer, P. Krüger, A. Mazur, J. Pollmann and M. Schmeits
    Electronic Structure Studies of Hydrogen Adsorption and of Vacancies at the Relaxed GaAs(110) Surface
    J. Vac. Sci. Technol. 21, 358 (1982)

  8. A. Mazur, J. Pollmann and M. Schmeits
    Angular-Resolved Initial State Spectra for the Relaxed GaAs(110) Surface
    Sol. State Commun. 42, 37 (1982)


1981


  1. P.K. Larsen, J.F. van der Veen, A. Mazur, J. Pollmann and B.H. Verbeek
    Photoemission from Valence Bands of GaAs(001) grown by Molecular Beam Epitaxy
    Sol. State Commun. 40, 459 (1981)

  2. I. Ivanov and J. Pollmann
    Electronic Structure of Ideal and Relaxed Surfaces of ZnO: A Prototype Ionic Wurtzite Semiconductor and its Surface Properties
    Phys. Rev. B 24, 7275 (1981)

  3. I. Ivanov and J. Pollmann
    Effects of Surface Relaxation on the Electronic Structure of ZnO
    Proceedings of PCSI8 (Williamsburgh, 1981); J. Vac. Sci. Technol. 19, 344 (1981)

  4. M. Schmeits, A. Mazur and J. Pollmann
    Electronic Structure of Ideal and Relaxed InSb(110) Surfaces
    Sol. State Commun. 40, 1081 (1981)


1980


  1. A. Mazur, J. Pollmann and M. Schmeits
    Overlayer-Systems: Suitable Samples for Probing Heterojunction Interface Properties
    Sol. State Commun. 36, 961 (1980)

  2. J. Pollmann
    Electronic Structure of a Vacancy at the Si (100) Surface
    in Proceedings of the 11. Int. Conf. on Defects and Radiation Effects in Semiconductors, Oiso, Japan (1980), Inst. Phys. Conf. Ser. No 59, p. 151

  3. A. Mazur, J. Pollmann and M. Schmeits
    Electronic Structure of Segregated Ge---(110) GaAs Overlayer Systems
    in Proceedings of the 15. Int. Conf. on the Physics of Semiconductors, Kyoto; J. Phys. Soc. Japan 49, Suppl. A 1121 (1980)

  4. I. Ivanov and J. Pollmann
    First Surface Electronic Structure of a Wurtzite Semiconductor---The Polar and Nonpolar Surfaces of ZnO
    Sol. State Commun. 36, 361 (1980)

  5. A. Mazur, J. Pollmann and M. Schmeits
    Interface Bands and Layer Densities of States of (110)Ge-GaAs Heterostructures
    in Proceedings of the Fourth Int. Conf. on Solid Surfaces, (Cannes, France), Vol. II, p. 975 (1980)

  6. J. Pollmann
    Vacancies at Si, Ge and GaAs (100) Surfaces
    in Proceedings of the Fourth Int. Conf. on Solid Surfaces, (Cannes, France), Vol. I, p. 7 (1980)

  7. J. Pollmann
    On the Electronic Structure of Semiconductor Surfaces, Interfaces and Defects at Surfaces or Interfaces
    in Festkörperprobleme, (Adv. in Solid State Physics), Vol. XX, J. Treusch (ed.), Vieweg, Braunschweig (1980), p. 117

  8. J. Pollmann, A. Mazur and M. Schmeits
    Electronic Properties of Relaxed Surfaces, Interfaces, Overlayer-Systems and Defects at Surfaces or Interfaces-Applications of the Scattering Theoretical Method
    Surf. Science 99, 165 (1980)

  9. J. Pollmann
    Defects at Surfaces and Interfaces---A Scattering Theoretical Approach
    Sol. State Commun. 34, 587 (1980)

  10. I. Ivanov, A. Mazur and J. Pollmann
    The Ideal (111), (110) and (100) Surfaces of Si, Ge and GaAs---A Comparison of their Electronic Structure
    Surf. Sci. 92, 365 (1980)

  11. J. Pollmann and S.T. Pantelides
    Electronic Structure of the Ge-GaAs and Ge-ZnSe (100) Interfaces
    Phys. Rev. B 21, 709 (1980)


1979


  1. I. Ivanov and J. Pollmann
    A Microscopic Approach to the Quantum Size Effect in Superlattices
    Sol. State Commun. 32, 869 (1979)

  2. J. Pollmann and S.T. Pantelides
    Electronic Structure of Ge Overlayers on (100) GaAs
    J. Vac. Sci. Technol. 16, 1498 (1979)

  3. S.T. Pantelides and J. Pollmann
    Critique of the Empirical Tight-Binding Method for Surfaces and Interfaces
    J. Vac. Sci. Technol. 16, 1349 (1979)

  4. J. Pollmann and S.T. Pantelides
    New Method for the Electronic Structure of Heterojunctions---Application to the (100) Ge-GaAs Interface
    Sol. State Commun. 30, 621 (1979)

  5. J. Pollmann and S.T. Pantelides
    Localization of Electronic States at Free Semiconductor Surfaces
    Phys. Rev. B 20, 1740 (1979)

  6. N.O. Lipari and J. Pollmann
    Theory of Excitons in a Magnetic Field for Anisotropic and Polar Semiconductors
    Proc. of the XIV. Int. Conf. on the Physics of Semiconductors, Edinburg 1978, Inst. Phys. Conf. Ser. No 43, 1079 (1979)

  7. J. Pollmann and S.T. Pantelides
    Electronic Structure of Semiconductor Surfaces and Interfaces---A Novel Approach Based on Scattering Theory
    Proc. of the XIV. Int. Conf. on the Physics of Semiconductors, Edinburgh 1978, Inst. Phys. Conf. Ser. No 43, 199 (1979)


1978


  1. J. Pollmann, N.O. Lipari and H. Büttner
    Quenching of Exciton Diamagnetic Shifts in Polar, Layered Materials
    Sol. State Commun. 28, 203 (1978)

  2. S.T. Pantelides, J. Bernholc, J. Pollmann and N.O. Lipari
    Green's Functions Scattering-Theoretic Methods for Point Defects, Surfaces and Interfaces
    in Solids Int. Journ. Quant. Chem. 12, 507 (1978)

  3. J. Pollmann and S.T. Pantelides
    Scattering-Theoretic-Approach to the Electronic Structure of Semiconductor Surfaces: The (100) Surface of Tetrahedral Semiconductors and SiO2
    Phys. Rev. B 18, 5524 (1978)


1977


  1. J. Pollmann and H. Büttner
    Effective Hamiltonians and Binding Energies of Wannier Excitons in Polar Semiconductors
    Phys. Rev. B 16, 4480 (1977)

  2. B. Gerlach and J. Pollmann
    Wannier Excitons in Layered Semiconductors
    Il Nuovo Cimento 38B, 423 (1977)


1976


  1. G. Behnke, H. Büttner and J. Pollmann
    Ground-State Energy of the Exciton-Phonon System in a Magnetic Field
    Sol. State Commun. 20, 873 (1976)

  2. J. Pollmann
    Exciton Ground-State in Strongly Anisotropic Crystals
    Sol. State Commun. 19, 361 (1976)


1975


  1. J. Pollmann
    Some Remarks on the Fine Structure of Excitonic Lines in CuCl
    phys. stat. sol. (b) 71, K147 (1975)

  2. J. Pollmann and H. Büttner
    Upper Bounds for the Ground-State Energy of the Exciton-Phonon System
    Sol. State Com. 17, 1171 (1975)

  3. B. Gerlach and J. Pollmann
    Binding Energies and Wave Functions of Wannier Excitons in Uniaxial Crystals -- A Modified Perturbation Approach: II. Applications
    phys. stat. sol. (b) 67, 477 (1975)

  4. B. Gerlach and J. Pollmann
    Binding Energies and Wave Functions of Wannier Excitons in Uniaxial Crystals -- A Modified Perturbation Approach: I. Theory
    phys. stat. sol.(b) 67, 93 (1975)


1974


  1. J. Pollmann
    Improved Perturbation Treatment of Bound-State Problems with Special Applications to the Exciton
    phys.stat.sol.(b) 63, 501 (1974)


1973


  1. J. Pollmann
    Elastic Interaction of Point Defects with Tetragonal Symmetry in Anisotropic, Cubic Crystals
    KFA-Jülich-Report; Jül-1023-FF (November 1973)

  2. J. Pollmann and H. Büttner
    Phonon Influence on the Biexciton Binding in CuCl and CuBr
    Sol. State Commun. 12, 1105 (1973)


1972


  1. P.H. Dederichs and J. Pollmann
    Elastic Displacement Field of Point Defects in Anisotropic, Cubic Crystals.
    Z. Phys. 255, 315 (1972)

  2. P.H. Dederichs and J. Pollmann
    Elastisches Verschiebungsfeld und Wechselwirkungsenergie von Punktdefekten in anisotropen, kubischen Kristallen
    KFA-Jülich-Report; Jül-836-FF (März 1972)

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