General information

All machines available in the labs of the Münster Nanofabrication Facility are listed here.

To access the machines a timeslot has to be reserved in advance in the booking system.
Further information like operation instructions and recipes can be found in the MNF-Wiki.

More information on how to register for the MNF-Wiki and the booking system is provided here.

Deposition

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Sputtering system - von Ardenne LS 730S

  • Magnetron-Sputtersources: Aluminium (Al) and Silver (Ag) (PPS-A 150)
  • DC-Generator: DFG 1500 DC (1.5 kW) for high-rate-sputtering of 50 nm to 1 µm layers
  • Vacuum pressure: ~ 2 x 10-5 mbar
  • Processing pressure: 10-3 mbar (with Argon flow)
  • Sample size: < 4”-Substrates in sputter-up-mode (Sampleholder for various chip sizes)

Responsible: Fabian Beutel, Philip Schrinner


Electron Beam Physical Vapor Deposition (EBPVD)

  • Beamtec Electron beam evaporator EBM-6II
  • Elite 4 controller with beam deflection tracking system
  • 4 kW high voltage stage
  • 8 x 4 cm3 Crucibles System
  • Available materials: Au, Al, Cr, Cu, ITO, SiO2, Ti

Responsible: Simone Ferrari, Wladislaw Hartmann


ALD - Cambridge NanoTech Savannah

Responsible: Nicolai Walter

Etching

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Dry etching - ICP-RIE MicroSys200

  • ICP and RF generators 13.56 MHz, 1200 W
  • Process gases: Ar, O2, SF6, CF4, CHF3, H2, HBr, Cl2, BCl3, H2S, XeF2
  • Substrates up to 8”

Responsible: Johannes Kern, Simone Ferrari


© MNF

Plasma Asher - Dionex 2000 Plasma System

  • Power: 0-500 W continuous control
  • Frequency: 13.56 MHz
  • O2 Plasma

Responsible: Nicolai Walter, Nico Gruhler

Lithography

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Electron-beam lithography - EBPG5150 - Raith

  • High current density Thermal Field Emission gun for operation at 20, 50 and 100 kV
  • ISO 5 environmental chamber
  • 155 mm x 155mm stage
  • Mimimum feature size of less than 8 nm
  • Rapid exposure with 50 or 100 MHz pattern generator
  • Continuously variable large field size operation to 1 mm at all kVs
  • GUI for ease of use operation for diverse "multi user environment"

Responsible: Simone Ferrari, Fabian Beutel


Mask aligner - Karl Suss MA56

  • Configured for 5" wafers

  • UV400 Exposure Optics (for 365 nm and 405 nm exposure)

  • Capable of Hard Contact, Soft Contact and Proximity Exposure Modes

Responsible: Johannes Kern, Nicolai Walter


© MNF

3D Lithography - Nanoscribe Photonic Professional GT

  • Writing area up to 100 × 100 mm² range
  • Two-photon lithography of common positive-tone photoresists
  • Two photon polymerization (2PP) of various UV-curable photoresists
  • High speed 3D printing by galvo technology
  • High resolution micro 3D printer

Responsible: Helge Gehring, Lin Jin


Spin coaters

2 x POLOS Spin 150i - SPS europe (for EBeam-resists)

  • Speed: 0 -12 000 rpm
  • Spin processor for cleaning, drying, coating, developing and/or etching of up to Ø 160 mm substrates
  • 1 x table top, 1 x wet bench integrated
  • Rotation direction (CW, CCW, puddling)
  • Full-Plastic System in Natural Polypropylene (NPP)
  • Easy, step- by- step recipe programming via large colour touchscreen

1 x Convac TSR48/5 1QS (for photoresists)

  • Speed: 0-9990 rpm
  • Processes with up to eight steps can be programmed

Responsible: Johannes Feldmann, Simone Ferrari

Wet processing

HF bench

Responsible: Wladislaw Hartmann


© MNF

Wet bench

  • Two hotplates
  • Spin coater - Polos Spin 150i
  • Ultrasonic bath
  • DI-water

Responsible: Johannes Feldmann, Simone Ferrari


Critical Point Dryer - Leica EM CPD300

  • Fully automated, reproducible and controlled processes ensure high sample quality every run
  • Integrated liquid waste separator ensures safe and easy disposal of exchange fluid avoiding direct contract with user
  • Wide variety of sample holders for all sample sizes

Responsible: Wladislaw Hartmann, Nicolai Walter

Thermal processing

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Tube furnace - Carbolite TZF 12/100/900

  • Temperatures up to 1200 °C
  • Heat up time 120 min
  • Max. continuous operating temperature 1100 °C

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Imaging

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Optical Microscope - Nikon Eclipse LV100ND

  • Bright & Darkfield
  • Magnification: 2.5 - 100 x
  • Differential interference contrast (DIC) prism
  • Max. sample size: 150 x 150 mm

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TEM

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© MNF

SEM / FIB - Carl Zeiss XB1540 Cross-Beam

  • Scanning electron microscope, 1 nm max resolution
  •  Acceleration voltage 1-30kV
  •  SE2, secondary electron detector
  •  BSE, backscattered electron detector
  •  Focused Ion Beam milling using Ga ions; 5 nm precision
  •  Live SEM imaging during FIB milling
  •  Raith nanolithography system for electron/ion lithography
  •  Kleindiek MM3a micromanipulators
  •  Gas injection system can be made available upon request

Responsible: Johannes Kern, Torsten Stiehm

Metrology

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Film thickness measurement - Filmetrics F20

  • 15 nm - 70 µm
  • Wavlength range 380-1050 nm
  • up to 1 µm spot thickness measurements microscope available

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AFM

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Tof - SIMS

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Profilometer

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Packaging

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Stereolithography 3D Printer - Ember

  • Z-resolution: 10-100 µm
  • XY-resolution: 50 µm
  • Build volume: 64 x 40 x 134 mm
  • Speed: 18 mm/h at 25µm layer thickness

Responsible: Nicolai Walter


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Semi-automatic dicing system - K&S 7100 ad

  • Accuracy in x/y: 1 µm
  • Accuracy in z: 200 nm
  • Substrate thickness < 12 mm
  • Materials: Si, GaAs, SOS (Silicon on Sapphire), ...

Responsible: Nicolai Walter


Wafer bonder

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